IPD80R600P7

Les images sont à titre de référence seulement

IPD80R600P7

MOSFETs LOW POWER_NEW

100% original & Nouveau

24 heures prêtes à expédier

Garantie 365 jours

RFQ et Obtenez plus de rabais

Spécifications

Packaging Reel

Vue d'ensemble

Description

The IPD80R600P7 is an N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high-voltage applications, specifically rated for a maximum drain-source voltage of 600V and a continuous drain current of 80A. It features low on-resistance (RDS(on)), which minimizes power loss during operation, making it suitable for applications such as power supplies, motor drives, and converters.
This device is part of Infineon's CoolMOS family, known for its efficiency in switching applications. The P7 series incorporates advanced technology for improved performance, including fast switching characteristics and thermal stability. The IPD80R600P7 is typically packaged in a TO-247 format, which aids in efficient heat dissipation.
Overall, the IPD80R600P7 is ideal for engineers looking for reliable and efficient solutions for high-voltage applications in power electronics. Its performance characteristics make it a popular choice in various industrial and consumer applications.

Features

The IPD80R600P7 is an N-channel Power MOSFET from Infineon Technologies, renowned for its high performance in power applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 600V, making it suitable for high-voltage applications.
2. Continuous Drain Current: Supports a continuous drain current (I_D) of up to 80A, allowing it to handle significant load currents.
3. R_DS(on): The on-resistance (R_DS(on)) is low, typically around 0.14 ohms, which enhances efficiency by minimizing conduction losses.
4. Thermal Performance: It offers good thermal stability, with a maximum junction temperature of 150°C.
5. Fast Switching: Designed for quick switching applications, reducing losses in high-frequency operation.
6. Package Type: Available in a TO-220 package, facilitating ease of heat dissipation and integration into various designs.
These features make the IPD80R600P7 ideal for use in power supplies, motor drives, and other applications demanding robust performance.

Package

The IPD80R600P7 is packaged in a TO-247 format. This package type is designed for high-power applications, allowing for efficient heat dissipation and easier mounting on heatsinks.

Pinout

The IPD80R600P7 is an N-channel MOSFET with a total of 3 pins. Its primary functions include:
1. Gate (G): This pin is used to control the MOSFET; applying a voltage here turns the device on or off.
2. Drain (D): This pin is where the current flows out of the device, acting as the output terminal.
3. Source (S): This pin is the input terminal for current flow; it connects to the load and is typically grounded in switching applications.
The IPD80R600P7 is designed for applications requiring high voltage and current handling capabilities, making it suitable for power electronics and switching applications. Its specifications include a maximum drain-source voltage of 600V and a continuous drain current of 80A.

Manufacturer

The IPD80R600P7 is manufactured by Infineon Technologies, a German semiconductor manufacturer. Infineon specializes in semiconductor and system solutions, focusing on automotive, industrial, and security applications. The company is known for its innovations in power semiconductors, microcontrollers, and sensors. Infineon plays a significant role in the development of technologies for energy efficiency, mobility, and security, catering to a range of sectors including automotive, industrial electronics, and communication.

Application

The IPD80R600P7 is an N-channel MOSFET primarily used in power conversion applications, such as switching power supplies, motor drives, and inverters. Its high voltage and current ratings make it suitable for industrial automation, renewable energy systems, and electric vehicles. Additionally, it can be found in consumer electronics for efficient power management and thermal performance.

Equivalent

The IPD80R600P7 is an N-channel MOSFET. Equivalent products include the IRFP240, STP80NF600, and FQP80N60. Always verify specifications such as voltage, current, and RDS(on) to ensure compatibility in your application.

Expédition

Méthodes d'expéditionNous

offrir des services d'expédition mondiaux par DHL, FedEx, TNT, UPS ou tout autre expéditeur de votre choix.


Référence des frais d'expédition (DHL/FedEx):

DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

Paiements

Payment Methods

Le terme de paiement est 100% prépayé.

Actuellement, nous n'acceptons que les méthodes de paiement ci-dessous:

1. PayPal

2. Carte de crédit/débit

3. Transfert bancaire

Similaire