IPD80N04S3-06

Les images sont à titre de référence seulement

IPD80N04S3-06

OPTLMOS N-CHANNEL POWER MOSFET

100% original & Nouveau

24 heures prêtes à expédier

Garantie 365 jours

RFQ et Obtenez plus de rabais

Spécifications

Package Bulk
ProductStatus Active

Vue d'ensemble

Description

The IPD80N04S3-06 is an N-channel MOSFET designed for high-efficiency power applications. It features a maximum drain-source voltage (V_DS) of 40V and a continuous drain current (I_D) rating of 80A at a temperature of 25°C. This MOSFET is known for its low on-resistance (R_DS(on)), which minimizes power losses during operation, making it suitable for applications in power management, DC-DC converters, and motor drives.
Key specifications include a maximum gate-source voltage (V_GS) of ±20V and an R_DS(on) of around 6.5 mΩ at a gate voltage of 10V. The device is housed in a TO-220 package, facilitating effective heat dissipation, which is crucial for maintaining performance under high-load conditions.
The IPD80N04S3-06 is ideal for applications requiring efficient switching and thermal performance, and it is commonly used in automotive, industrial, and consumer electronics sectors. Overall, it represents a reliable choice for designers looking to enhance energy efficiency in their circuits.

Features

The IPD80N04S3-06 is an N-channel MOSFET designed for power applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (VDS) of 40V, making it suitable for various power applications.
2. Current Rating: It can handle a continuous drain current (ID) of up to 80A, allowing it to manage significant power levels.
3. Low RDS(on): It features a low on-resistance (typical RDS(on) of approximately 6 mΩ), which minimizes power losses and improves efficiency.
4. Fast Switching Speed: The MOSFET is designed for high-speed operation, making it suitable for applications requiring rapid switching.
5. Thermal Performance: It has a high thermal resistance, enabling efficient heat dissipation during operation.
6. Package Type: Typically available in a TO-220 or similar package, facilitating easy mounting and heat sinking.
These characteristics make the IPD80N04S3-06 ideal for applications in power supplies, motor drives, and other high-current scenarios.

Package

The IPD80N04S3-06 is typically packaged in a DPAK (also known as TO-252) format. This package type is designed for power MOSFETs, offering a compact size and efficient heat dissipation.

Pinout

The IPD80N04S3-06 is a N-channel MOSFET with a total of 5 pins. The pin configuration and functions are as follows:
1. Gate (G) - This pin is used to control the MOSFET; applying a voltage turns it on.
2. Drain (D) - This pin connects to the load; current flows from the drain to the source when the MOSFET is on.
3. Source (S) - This pin is connected to the ground or negative side of the circuit, completing the circuit when the MOSFET is activated.
4. Body Diode - The MOSFET also includes an intrinsic body diode, which provides a path for current in the reverse direction when the MOSFET is off.
The IPD80N04S3-06 is designed for high-efficiency applications, with a maximum drain-source voltage (V_DS) of 40V and a continuous drain current (I_D) rating of 80A. Its low on-resistance (R_DS(on)) makes it suitable for power switching applications.

Manufacturer

The IPD80N04S3-06 is manufactured by Infineon Technologies AG, a German semiconductor manufacturer. Infineon specializes in a range of products, including power semiconductors, microcontrollers, and sensors. The company focuses on providing solutions for various applications, including automotive, industrial, and consumer electronics. Infineon is known for its innovations in power management and efficiency, making it a key player in the semiconductor industry.

Application

The IPD80N04S3-06 is a high-performance MOSFET used in various applications, including power management, DC-DC converters, motor drives, and power supplies. Its low on-resistance and high current handling capabilities make it suitable for automotive systems, industrial automation, and renewable energy systems. Additionally, it can be used in switching power supplies and inverter circuits, enhancing efficiency and thermal performance in electronic devices.

Equivalent

The IPD80N04S3-06 is an N-channel MOSFET. Equivalent products include the IRF320, STP80NF06, and BUK7YB30-60. Ensure to check specifications like voltage rating, current handling, and RDS(on) for compatibility in your specific application.

Expédition

Méthodes d'expéditionNous

offrir des services d'expédition mondiaux par DHL, FedEx, TNT, UPS ou tout autre expéditeur de votre choix.


Référence des frais d'expédition (DHL/FedEx):

DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

Paiements

Payment Methods

Le terme de paiement est 100% prépayé.

Actuellement, nous n'acceptons que les méthodes de paiement ci-dessous:

1. PayPal

2. Carte de crédit/débit

3. Transfert bancaire

Similaire