IPD50R399CP

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IPD50R399CP

MOSFET N-CH 500V 9A TO252-3

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Spécifications

Series CoolMOS™ CP
Part Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 500 V
Current - Continuous Drain (Id) @ 25°C 9A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 399mOhm @ 4.9A, 10V
Vgs(th) (Max) @ Id 3.5V @ 330µA
Gate Charge (Qg) (Max) @ Vgs 23 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 890 pF @ 100 V
Power Dissipation (Max) 83W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TO252-3-11
Package / Case TO-252-3, DPAK (2 Leads + Tab), SC-63
Base Product Number IPD50R

Vue d'ensemble

Description

The IPD50R399CP is a N-channel Power MOSFET designed for high-efficiency switching applications. It features a maximum drain-source voltage (V_DS) of 50V and a continuous drain current (I_D) rating of 39A at a specified junction temperature. With a low on-resistance (R_DS(on)) of 0.0399 ohms, it offers reduced power loss and improved thermal performance, making it suitable for applications such as power management, DC-DC converters, and motor control.
The device is housed in a TO-220 package, allowing for effective heat dissipation. Its fast switching capabilities enhance performance in fast-switching applications. The IPD50R399CP is often used in automotive, industrial, and consumer electronics, where reliability and efficiency are crucial. With its robust specifications, it supports various applications requiring high power handling in compact designs.

Features

The IPD50R399CP is a N-channel MOSFET designed for high-performance switching applications. Key features include:
1. Voltage Rating: Maximum drain-source voltage (V_DS) of 40V, suitable for various power applications.
2. Current Handling: Continuous drain current (I_D) rating of 50A, allowing it to handle significant load.
3. R_DS(on): Low on-resistance (around 3.9 mΩ), minimizing conduction losses and improving efficiency.
4. Gate Voltage: Compatible with standard gate drive voltages, ensuring ease of use in various circuits.
5. Package Type: Available in a TO-220 package, providing good thermal performance and ease of heatsinking.
6. Fast Switching: Suitable for fast switching applications, making it ideal for power converters and inverters.
7. Thermal Resistance: Low thermal resistance, enhancing heat dissipation capabilities.
These characteristics make the IPD50R399CP a robust choice for applications like power management, motor control, and RF amplification.

Package

The IPD50R399CP is packaged in a DPAK (also known as TO-252) package type, which is a surface-mount design suitable for power applications. It is designed for high-efficiency and thermal performance.

Pinout

The IPD50R399CP is an N-channel MOSFET with a pin count of 8. It is designed for power applications, featuring a low on-resistance and high-speed switching capabilities.
Pin Configuration and Functions:
1. Gate (G) - Controls the MOSFET's switching.
2. Drain (D) - Conducts current out of the MOSFET when it is on.
3. Source (S) - Provides the return path for current.
4. Body Diode - Internal to the MOSFET, allows current to flow in the reverse direction when the MOSFET is off.
The other pins are typically used for configuration or may not be connected (NC). The device is commonly used in applications such as DC-DC converters, motor drives, and power management systems due to its efficiency and thermal performance.

Manufacturer

The IPD50R399CP is manufactured by Infineon Technologies, a global semiconductor company based in Germany. Infineon specializes in providing semiconductor and system solutions, focusing on areas such as automotive, industrial power control, and security. The company is known for its innovations in power management, enabling energy-efficient systems and applications. Infineon plays a significant role in the development of technologies that support sustainable energy solutions and is a key player in the semiconductor market.

Application

The IPD50R399CP is a N-channel MOSFET primarily used in applications such as power management, load switching, and DC-DC converters. Its low on-resistance and high-speed switching capabilities make it suitable for use in automotive systems, industrial automation, and renewable energy systems. Additionally, it can be utilized in motor control, power supplies, and high-efficiency power conversion circuits.

Equivalent

The IPD50R399CP is an N-channel MOSFET. Equivalent products include the IRF3205, STP50NF06, and FQP50N06. Always verify specifications like voltage, current, and RDS(on) when selecting an alternative.

Expédition

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DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

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