IPD50N06S4L-08

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IPD50N06S4L-08

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  • Mfr. Partie #IPD50N06S4L-08
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Spécifications

Technology Si
Packaging Reel
Brand Infineon Technologies
Product Type MOSFETs
Series OptiMOS-T2
Factory Pack Quantity:Factory Pack Quantity 2500
Subcategory Transistors
Part # Aliases IPD5N6S4L8XT SP000374322 IPD50N06S4L08ATMA1
Shipping Restrictions Mouser does not presently sell this product in your region.
Mounting Style SMD/SMT
Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 175 C
Height 2.3 mm
Length 6.5 mm
Width 6.22 mm
Unit Weight 0.011640 oz
Package / Case DPAK-3 (TO-252-3)
Configuration Single
Tradename OptiMOS
Transistor Polarity N-Channel
Number of Channels 1 Channel
Vds - Drain-Source Breakdown Voltage 60 V
Id - Continuous Drain Current 50 A
Rds On - Drain-Source Resistance 6.3 mOhms
Vgs - Gate-Source Voltage - 16 V, + 16 V
Vgs th - Gate-Source Threshold Voltage 1.2 V
Qg - Gate Charge 64 nC
Pd - Power Dissipation 71 W
Channel Mode Enhancement
Fall Time 8 ns
Rise Time 2 ns
Transistor Type 1 N-Channel
Typical Turn-Off Delay Time 45 ns
Typical Turn-On Delay Time 9 ns

Vue d'ensemble

Description

The IPD50N06S4L-08 is an N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high-performance switching applications. It features a low R_DS(on) (drain-source on-resistance), enabling efficient power conversion and minimizing heat generation. With a maximum drain current rating of 50A and a voltage rating of 60V, it is suitable for various applications, including power management in DC-DC converters, motor drives, and other high-frequency circuits.
This MOSFET operates efficiently at high speeds, making it ideal for applications requiring rapid switching. Its thermal management capabilities and robust construction also make it resilient under demanding conditions. The IPD50N06S4L-08 is packaged in a TO-220 or similar format, facilitating easy heat dissipation.
Overall, it is widely used in industrial and consumer electronics for its reliability, efficiency, and performance in power handling.

Features

The IPD50N06S4L-08 is an N-channel MOSFET designed for high-efficiency power applications. Key features include:
1. V_DS Rating: 60V, suitable for various power management tasks.
2. I_D Rating: 50A continuous drain current, enabling robust performance in demanding environments.
3. R_DS(on): Low on-resistance (typically 8 mΩ at V_GS = 10V), minimizing power loss and heat generation.
4. Gate Threshold Voltage (V_GS(th)): Typically between 2-4V, allowing for easy saturation with standard drive voltages.
5. Fast Switching Speed: Optimized for rapid switching applications, enhancing efficiency in power converters and inverters.
6. Thermal Performance: Good thermal stability with a TO-220 package, facilitating effective heat dissipation.
7. Applications: Ideal for use in power supplies, motor drives, and automotive applications.
This MOSFET combines high current capability with low on-resistance, making it suitable for energy-efficient designs.

Package

The IPD50N06S4L-08 is packaged in a DPAK (also known as TO-252) format. This surface-mount package is designed for efficient thermal management and is commonly used in power applications.

Pinout

The IPD50N06S4L-08 is a N-channel MOSFET that features a pin count of 3. The pin configuration and their functions are as follows:
1. Gate (G) - This pin is used to control the MOSFET. A voltage applied to this pin turns the device on or off.
2. Drain (D) - This pin connects to the load. Current flows from the drain to the source when the device is turned on.
3. Source (S) - This pin is connected to the ground or the negative side of the power supply.
The device is designed for high-efficiency applications, with a rated maximum drain-source voltage (V_DS) of 60V and maximum continuous drain current (I_D) of 50A, making it suitable for various power management applications.

Manufacturer

The IPD50N06S4L-08 is manufactured by Infineon Technologies AG. Infineon is a global semiconductor company headquartered in Neubiberg, Germany. It specializes in the design and production of a wide range of semiconductor solutions, focusing on power management, automotive, industrial, and security applications. The company is known for its innovations in power semiconductors, microcontrollers, and sensors, serving various markets including automotive, industrial, and consumer electronics. Infineon aims to enhance energy efficiency and sustainability through its advanced technology solutions.

Application

The IPD50N06S4L-08 is an N-channel MOSFET commonly used in applications such as power management, motor control, DC-DC converters, and switching applications. Its low on-resistance and high-speed switching capabilities make it suitable for automotive, industrial, and consumer electronics, including power supplies and LED drivers.

Equivalent

The IPD50N06S4L-08 is a N-channel MOSFET. Equivalent products include the IRF3205, STP50NF06, and BUK956-50A. Always verify specifications such as voltage, current rating, and RDS(on) for compatibility in your specific application.

Expédition

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Référence des frais d'expédition (DHL/FedEx):

DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

Paiements

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