IPD35N10S3L-26

The IPD35N10S3L-26 is a N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high-efficiency power switching applications. With a maximum drain-source voltage of 100V and a continuous drain current of 35A, it is suitable for various applications, including power supplies, motor drives, and DC-DC converters.
This MOSFET features a low on-resistance (Rds(on) typically around 26 mΩ at 10V gate voltage), which contributes to reduced power losses and improved thermal efficiency. It has a fast switching speed, making it ideal for high-frequency applications.
The IPD35N10S3L-26 is housed in a TO-220 package, facilitating effective heat dissipation and easy mounting on circuit boards. Its performance characteristics enable it to withstand high power levels while maintaining reliability. Overall, it is a versatile component widely used in modern electronic systems for efficient power management.

The IPD35N10S3L-26 is a N-channel MOSFET designed for high-efficiency power applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 100V.
2. Current Capability: The device supports a continuous drain current (I_D) of up to 35A, making it suitable for high-load applications.
3. R_DS(on): It boasts a low on-resistance of approximately 26 mΩ, which minimizes power loss and improves thermal efficiency.
4. Fast Switching: The MOSFET offers fast switching speeds, enhancing performance in applications like DC-DC converters and motor drives.
5. Thermal Performance: It features a robust thermal management design, with a low thermal resistance that aids in heat dissipation.
6. Package: The part is typically available in a TO-220 or similar package, facilitating effective heatsinking and mounting.
7. Applications: Commonly used in automotive, industrial, and consumer electronics applications for power management.
These features make the IPD35N10S3L-26 a versatile choice for various power electronic applications.

The IPD35N10S3L-26 is typically housed in a TO-220 package type.

The IPD35N10S3L-26 is an N-channel MOSFET with a total of 3 pins. The pin configuration and functions are as follows:
1. Gate (G): This pin is used to control the MOSFET's switching state. A voltage applied to the gate allows the MOSFET to turn on (conduct), while removing the voltage turns it off (non-conducting).
2. Drain (D): This pin is where the current enters the MOSFET. It is connected to the load that the MOSFET controls.
3. Source (S): This pin is the output of the MOSFET, where the current exits. It is typically connected to the ground or the negative terminal of the power supply in a typical N-channel configuration.
The IPD35N10S3L-26 is designed for high-efficiency switching applications, supporting high current and voltage levels, making it suitable for power management in various electronic devices.

The IPD35N10S3L-26 is manufactured by Infineon Technologies AG. Infineon is a German semiconductor manufacturer specializing in microelectronics and power semiconductor solutions. The company is known for its innovations in automotive, industrial, and security applications, providing a wide range of products including transistors, sensors, and microcontrollers. Infineon is recognized for its focus on energy efficiency, performance, and reliability in its semiconductor technologies.

The IPD35N10S3L-26 is a N-channel MOSFET primarily used in power management applications. Its key areas include DC-DC converters, motor drives, and power supplies for consumer electronics, industrial equipment, and automotive systems. It excels in high-efficiency switching applications due to its low on-resistance and fast switching capabilities.

The IPD35N10S3L-26 is an N-channel MOSFET. Equivalent products include the IRF3205, STP35NF10, and FDB35N10. Always verify specifications like Vds, Id, Rds(on), and package type for compatibility.