IPD100N04S402ATMA1

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IPD100N04S402ATMA1

MOSFET N-CH 40V 100A TO252-3

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Spécifications

Series OptiMOS™
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V
Current - Continuous Drain (Id) @ 25°C 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 2mOhm @ 100A, 10V
Vgs(th) (Max) @ Id 4V @ 95µA
Gate Charge (Qg) (Max) @ Vgs 118 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 9430 pF @ 25 V
Power Dissipation (Max) 150W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Grade Automotive
Qualification AEC-Q101
Mounting Type Surface Mount
Supplier Device Package PG-TO252-3-313
Package / Case TO-252-3, DPAK (2 Leads + Tab), SC-63
Base Product Number IPD100

Vue d'ensemble

Description

The IPD100N04S402ATMA1 is a N-channel MOSFET designed for power applications. With a maximum continuous drain current of 100A and a drain-source voltage rating of 40V, it is suitable for high-performance switching applications. The device features a low Rds(on) of approximately 4.2 mΩ, ensuring minimal power loss during operation and enhancing overall efficiency.
It is housed in a DPAK package, which is suitable for surface mounting and allows for effective heat dissipation. The IPD100N04S402ATMA1 is commonly used in power management systems, DC-DC converters, and motor control applications due to its robust performance characteristics.
Additionally, it is designed to handle high-speed switching, making it ideal for applications in automotive, industrial, and consumer electronics. The part is optimized for low gate charge, providing improved efficiency and faster switching times, which are crucial for modern power circuit designs.

Features

The IPD100N04S402ATMA1 is a high-performance N-channel MOSFET designed for power applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 40V, suitable for various power management needs.
2. Continuous Drain Current: The device can handle a continuous drain current (I_D) of up to 100A, making it effective for high-current applications.
3. R_DS(on): It boasts a low on-resistance (R_DS(on)) of approximately 4.2 mΩ (at V_GS = 10V), which helps reduce power loss and improve efficiency.
4. Gate Threshold Voltage: The gate threshold voltage (V_GS(th)) is typically between 2V to 4V, allowing for effective switching control.
5. Package Type: It comes in a DPAK package, which offers good thermal performance and is suitable for surface mounting.
6. Fast Switching Speed: Designed for fast switching applications, it minimizes transition losses.
This MOSFET is ideal for use in power supplies, motor drivers, and various other applications requiring efficient power management.

Package

The IPD100N04S402ATMA1 is packaged in a TO-220 form factor, which is a popular package type for high-power MOSFETs. This package provides good thermal performance and is suitable for various applications requiring efficient heat dissipation.

Pinout

The IPD100N04S402ATMA1 is an N-channel MOSFET manufactured by Infineon Technologies. It features a TO-220 package with a pin count of 3. The functions of the pins are as follows:
1. Gate (G): This pin is used to control the MOSFET. A voltage applied to this pin turns the device on or off.
2. Drain (D): This pin connects to the load and carries the current when the device is on.
3. Source (S): This pin is typically connected to ground in low-side switching applications and allows current to flow out of the MOSFET.
The device is designed for high-efficiency power applications, providing low on-resistance and fast switching capabilities.

Manufacturer

The IPD100N04S402ATMA1 is manufactured by Infineon Technologies, a leading global semiconductor manufacturer. Infineon specializes in semiconductor solutions for various applications, including automotive, industrial, and consumer electronics. The company focuses on power management, automotive safety, and security solutions, and it is known for its innovation in power semiconductors, particularly in MOSFETs and ICs. Infineon is headquartered in Neubiberg, Germany, and operates worldwide, providing advanced technology to enhance energy efficiency and improve performance in electronic systems.

Application

The IPD100N04S402ATMA1 is an N-channel MOSFET primarily used in power management applications, including DC-DC converters, motor drivers, and LED lighting. Its low on-resistance and high-speed switching capabilities make it suitable for automotive, industrial, and consumer electronics applications, particularly in power supply circuits and energy-efficient designs.

Equivalent

Equivalent products to the IPD100N04S402ATMA1 MOSFET include the IRF3205, STP100N04, and FQP100N04. These alternatives have similar specifications such as voltage ratings, current handling, and on-resistance. Always verify the specific parameters and application requirements to ensure compatibility.

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TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

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