IPD068P03L3G

Les images sont à titre de référence seulement

IPD068P03L3G

MOSFET P-CH 30V 70A DPAK

100% original & Nouveau

24 heures prêtes à expédier

Garantie 365 jours

RFQ et Obtenez plus de rabais

Spécifications

Part Status Active

Vue d'ensemble

Description

IPD068P03L3G is a power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high-efficiency applications. It typically features low R_DS(on) (drain-source on-resistance), allowing for reduced power losses and improved thermal performance. This component is commonly used in power management systems, DC-DC converters, and motor control applications due to its high switching speed and reliability.
Key specifications often include a maximum drain-source voltage (V_DS) and a continuous drain current (I_D), making it suitable for various industrial and consumer electronics applications. Its compact package design enables efficient thermal management, which is crucial for maintaining performance under heavy loads.
Overall, the IPD068P03L3G is ideal for engineers looking to enhance the efficiency and reliability of their electronic designs.

Features

The IPD068P03L3G is a N-channel MOSFET designed for high-performance applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (Vds) of 30V, making it suitable for low-voltage applications.
2. Current Handling: The device can handle continuous drain currents up to 68A, enabling it to drive substantial loads.
3. Low Rds(on): It boasts a low on-resistance (Rds(on)) of approximately 3 mΩ, which minimizes power losses and improves efficiency.
4. Fast Switching: The MOSFET supports fast switching speeds, making it ideal for switching power supplies and motor drivers.
5. Thermal Performance: It features a robust thermal design, allowing for better heat dissipation.
6. Package Type: Typically available in a TO-220 package, it facilitates easy mounting and heat management.
Overall, the IPD068P03L3G is well-suited for applications in power management, automotive systems, and other high-current environments.

Package

The IPD068P03L3G is packaged in a TO-220 form factor, which is a popular package type for power MOSFETs. This package provides good thermal performance and is suitable for various applications, including power management and switching.

Pinout

The IPD068P03L3G is a power MOSFET with a total of 5 pins. Its primary function is to act as a switch or amplifier in power management applications, particularly in low-voltage applications such as DC-DC converters, motor drivers, and battery management systems. The specific pin configuration typically includes:
1. Gate (G) - Controls the MOSFET's on/off state.
2. Drain (D) - The output pin where the load is connected.
3. Source (S) - The input pin connected to the ground or the source voltage.
The device features low on-resistance and high-speed switching capabilities, making it suitable for efficient power delivery. The IPD068P03L3G is designed for applications where low power loss is critical, contributing to overall system efficiency. Always refer to the manufacturer's datasheet for detailed specifications and operating conditions.

Manufacturer

The IPD068P03L3G is manufactured by Infineon Technologies AG. Infineon is a semiconductor manufacturer based in Germany, specializing in a wide range of products such as microcontrollers, power semiconductors, and sensors. The company serves various industries, including automotive, industrial, and consumer electronics. Infineon is known for its focus on innovation and technology aimed at enhancing energy efficiency and enabling a connected world, particularly in applications related to power management and energy solutions.

Application

The IPD068P03L3G is a N-channel MOSFET typically used in power management applications, including DC-DC converters, power supply circuits, and motor control. Its low on-resistance and high-speed switching capabilities make it suitable for efficient power switching in consumer electronics, automotive systems, and renewable energy applications like solar inverters.

Equivalent

The IPD068P03L3G is a N-channel MOSFET. Equivalent products include the IRF3205, STP55NF06, and BSS123, which have similar voltage and current ratings. Always check the specific parameters like RDS(on), VGS, and package type to ensure compatibility for your application.

Expédition

Méthodes d'expéditionNous

offrir des services d'expédition mondiaux par DHL, FedEx, TNT, UPS ou tout autre expéditeur de votre choix.


Référence des frais d'expédition (DHL/FedEx):

DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

Paiements

Payment Methods

Le terme de paiement est 100% prépayé.

Actuellement, nous n'acceptons que les méthodes de paiement ci-dessous:

1. PayPal

2. Carte de crédit/débit

3. Transfert bancaire

Similaire