IPB80N04S2-H4

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IPB80N04S2-H4

IPB80N04 - 20V-40V N-CHANNEL AUT

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Spécifications

Package Bulk
Series CoolMOS™
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 40 V
Current-ContinuousDrain(Id)@25°C 80A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 10V
RdsOn(Max)@IdVgs 3.7mOhm @ 80A, 10V
Vgs(th)(Max)@Id 4V @ 250µA
GateCharge(Qg)(Max)@Vgs 148 nC @ 10 V
Vgs(Max) ±20V
InputCapacitance(Ciss)(Max)@Vds 4400 pF @ 25 V
PowerDissipation(Max) 300W (Tc)
OperatingTemperature -55°C ~ 175°C (TJ)
MountingType Surface Mount
SupplierDevicePackage PG-TO263-3-2

Vue d'ensemble

Description

The IPB80N04S2-H4 is a high-performance N-channel MOSFET designed for power management applications. It features a maximum drain-source voltage (V_DS) of 40V and a continuous drain current (I_D) rating of 80A, making it suitable for switching applications in power supplies, motor drives, and automotive systems. The device is characterized by low on-resistance (R_DS(on)) and fast switching speeds, which minimize power losses and improve efficiency.
This MOSFET is housed in a TO-220 package, facilitating effective heat dissipation. It is designed for high-frequency applications, with a gate threshold voltage (V_GS(th)) that allows for easy interfacing with standard logic levels. Its rugged construction ensures reliability in demanding environments.
Overall, the IPB80N04S2-H4 is ideal for engineers seeking efficient, high-current switching solutions in various electronic applications.

Features

The IPB80N04S2-H4 is an N-channel MOSFET designed for high-efficiency power applications. Key features include:
1. Voltage Rating: 40V, suitable for low-voltage applications.
2. Current Rating: Handles continuous drain currents up to 80A, making it ideal for power switching.
3. On-Resistance (Rds(on)): Low on-resistance of about 4.6 mΩ (at Vgs = 10V), which reduces power losses during operation.
4. Gate Threshold Voltage (Vgs(th)): Typically between 2V to 4V, allowing for efficient drive at lower gate voltages.
5. Fast Switching Speeds: Designed for efficient switching in high-frequency applications.
6. Thermal Resistance: Good thermal performance, ensuring reliability under high-load conditions.
7. Package Type: Available in a TO-220 package, facilitating easy heat dissipation.
Overall, the IPB80N04S2-H4 is optimal for applications like power converters, motor control, and other high-current switching tasks.

Package

The IPB80N04S2-H4 is packaged in a TO-220 form factor. This package type allows for efficient heat dissipation and is commonly used for power MOSFET applications, providing a robust solution for high-current and high-voltage operations.

Pinout

The IPB80N04S2-H4 is an N-channel MOSFET designed for high-efficiency applications. It comes in a TO-220 package, which typically has three pins. The pinout functions are as follows:
1. Gate (G): This pin is used to control the MOSFET. A voltage applied to the gate allows current to flow from drain to source.
2. Drain (D): This is the pin where the load is connected. Current flows from the drain to the source when the MOSFET is turned on.
3. Source (S): This pin is connected to the ground or the negative side of the power supply.
The IPB80N04S2-H4 features low on-resistance and high current handling capabilities, making it suitable for applications like power management and motor control.

Manufacturer

The IPB80N04S2-H4 is manufactured by Infineon Technologies, a global semiconductor manufacturer headquartered in Germany. Infineon specializes in developing a wide range of semiconductor solutions, including power management, automotive, industrial, and security applications. The company is known for its innovation in power semiconductors, microcontrollers, and sensors, catering to various industries such as automotive, communications, and consumer electronics. Infineon plays a significant role in enabling energy efficiency and advanced technologies in the semiconductor market.

Application

The IPB80N04S2-H4 is a high-performance N-channel MOSFET used in various applications including power management, DC-DC converters, motor drives, and inverters. Its low on-resistance and fast switching capabilities make it suitable for use in automotive systems, renewable energy systems, and high-efficiency power supplies. Additionally, it can be employed in consumer electronics and industrial automation for efficient power control.

Equivalent

The IPB80N04S2-H4 is an N-channel MOSFET. Equivalent products include:
1. IRF3205
2. STP80NF06
3. FQD80N06L
4. AOD320
5. BSC080N04LS
Always verify specifications such as voltage, current rating, and R_DS(on) to ensure compatibility for your application.

Expédition

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Référence des frais d'expédition (DHL/FedEx):

DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

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