IPB65R095C7

The IPB65R095C7 is a N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high-efficiency applications. It features a maximum drain-source voltage (V_DS) of 650V and a continuous drain current (I_D) of 95A, making it suitable for high-voltage power supply, automotive, and industrial applications. This MOSFET is noted for its low on-resistance (R_DS(on)) of approximately 0.095 ohms, which contributes to reduced power losses and improved thermal performance.
The IPB65R095C7 is part of the CoolMOS™ technology family, offering enhanced switching performance and reduced electromagnetic interference (EMI). It is commonly used in applications such as switch-mode power supplies (SMPS), inverters, and motor drivers. The device comes in a TO-220 package, facilitating easy heat dissipation and integration into various circuits. Overall, the IPB65R095C7 is ideal for engineers seeking reliable, efficient components for demanding power applications.

The IPB65R095C7 is a high-performance power MOSFET designed for various applications, including switch-mode power supplies and power management systems. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 650V, suitable for high-voltage applications.
2. R_DS(on): It boasts a low on-resistance (R_DS(on)) of approximately 0.095 ohms, reducing conduction losses and improving efficiency.
3. Current Handling: The device can handle high current levels, with a continuous drain current (I_D) capability of up to 30A in specific conditions, making it reliable for demanding applications.
4. Fast Switching Speed: The MOSFET offers fast switching characteristics, enabling efficient operation in high-frequency applications.
5. Thermal Management: It has a high thermal capability, ensuring stability and performance under varying temperatures.
6. Package Type: Typically available in a TO-220 package, facilitating easy integration into circuit designs.
These features make the IPB65R095C7 an ideal choice for power conversion and management solutions in industrial and consumer electronics.

The IPB65R095C7 is packaged in a TO-247 type package. This package type is designed for high-power applications, providing efficient thermal management and robust performance in various electronic systems.

The IPB65R095C7 is an N-channel MOSFET manufactured by Infineon Technologies, designed for high-performance applications. It comes in a TO-220 package with a total of three pins. The pin configuration is as follows:
1. Gate (G): This pin is used to control the MOSFET's operation. A voltage applied here turns the device on or off.
2. Drain (D): This pin is where the load is connected. The current flows from the drain to the source when the MOSFET is turned on.
3. Source (S): This pin is connected to the ground or the lower potential in the circuit and is the return path for the current.
The IPB65R095C7 is characterized by a low on-resistance, high-speed switching capabilities, and is suitable for applications like power management, motor control, and DC-DC converters. Its high current and voltage ratings make it ideal for various power electronic circuits.

The IPB65R095C7 is manufactured by Infineon Technologies AG, a German semiconductor manufacturer. Infineon specializes in providing a wide range of semiconductor and system solutions, focusing on areas such as automotive, industrial power control, and communication. The company is known for its expertise in power semiconductors, including MOSFETs, IGBTs, and other devices that are crucial for efficient power management and energy conversion. Infineon serves various industries, including automotive, consumer electronics, and renewable energy, and is recognized for its commitment to innovation and sustainability.

The IPB65R095C7 is a 650V N-channel MOSFET used primarily in power electronics applications. Its application areas include switch-mode power supplies (SMPS), DC-DC converters, renewable energy systems (like solar inverters), motor drives, and industrial power management. Its low on-resistance and high efficiency make it suitable for high-frequency and high-voltage applications.

The IPB65R095C7 is an N-channel MOSFET with a maximum drain-source voltage of 650V and a continuous drain current of 95A. Equivalent products include the STP65NF75, IRF840, and FQD7N65F. Always check parameters such as R_DS(on), V_GS(th), and package type for compatibility in specific applications.