IPB120N06S4H1ATMA2

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IPB120N06S4H1ATMA2

MOSFET N-CH 60V 120A TO263-3

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Spécifications

Supplier Infineon Technologies
Package Tape & Reel (TR),Cut Tape (CT)
Series Automotive, AEC-Q101, OptiMOS™
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 60 V
Current-ContinuousDrain(Id)@25°C 120A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 10V
RdsOn(Max)@IdVgs 2.4mOhm @ 100A, 10V
Vgs(th)(Max)@Id 4V @ 200µA
GateCharge(Qg)(Max)@Vgs 270 nC @ 10 V
Vgs(Max) ±20V
InputCapacitance(Ciss)(Max)@Vds 21900 pF @ 25 V
PowerDissipation(Max) 250W (Tc)
OperatingTemperature -55°C ~ 175°C (TJ)
MountingType Surface Mount
SupplierDevicePackage PG-TO263-3-2

Vue d'ensemble

Description

The IPB120N06S4H1ATMA2 is a N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high-efficiency power management applications. It typically features a low on-resistance (RDS(on)), allowing for minimal power loss during operation, which enhances thermal performance and efficiency in circuits. With a voltage rating of 60V and a current capacity of up to 120A, it is suitable for use in various applications, including power supplies, motor drives, and DC-DC converters.
The device is often housed in a TO-220 package, which aids in heat dissipation, making it suitable for demanding environments. The IPB120N06S4H1ATMA2 is designed for fast switching speeds, making it ideal for high-frequency applications, and is widely used in both consumer electronics and industrial systems. When integrating this MOSFET into a circuit, designers must consider parameters such as gate drive requirements and thermal management to optimize performance.

Features

The IPB120N06S4H1ATMA2 is an N-channel MOSFET designed for high-efficiency power applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 60V, making it suitable for various power management applications.
2. Current Rating: The device supports continuous drain current (I_D) of up to 120A, allowing it to handle significant load demands.
3. Low On-Resistance: With a low R_DS(on) of approximately 4.1 mΩ (at V_GS = 10V), it minimizes conduction losses, contributing to better thermal performance.
4. Fast Switching: This MOSFET enables efficient switching, which is essential for high-frequency applications.
5. Thermal Management: It features a TO-220 package that provides effective heat dissipation, enhancing reliability in demanding environments.
6. Applications: Commonly used in power supplies, motor drives, and other high-power applications.
These characteristics make the IPB120N06S4H1ATMA2 ideal for industrial and automotive applications requiring robustness and efficiency.

Package

The IPB120N06S4H1ATMA2 is housed in a DPAK package type, which is a surface-mount package commonly used for power devices.

Pinout

The IPB120N06S4H1ATMA2 is an N-channel MOSFET from Infineon Technologies, specifically designed for power management applications. It has a total of 3 pins. The pin configuration is as follows:
1. Gate (G): This pin is used to control the MOSFET. A voltage applied to the gate allows current to flow between the drain and source.
2. Drain (D): The drain pin is where the output current flows out of the MOSFET. It connects to the load in applications.
3. Source (S): The source pin is connected to the ground or the negative side of the power supply. It completes the circuit for the current.
The device is suitable for high-efficiency switching applications, with low R_DS(on) and fast switching capabilities.

Manufacturer

The manufacturer of the IPB120N06S4H1ATMA2 is Infineon Technologies. Infineon is a global semiconductor company headquartered in Neubiberg, Germany. It specializes in providing a wide range of semiconductor and system solutions, particularly in the areas of power management, automotive electronics, and security technologies. Infineon serves various industries, including automotive, industrial, and consumer electronics, focusing on energy efficiency and innovation. The company is known for its high-performance power MOSFETs, like the IPB120N06S4H1ATMA2, which are used in applications such as motor control, renewable energy, and power supply systems.

Application

The IPB120N06S4H1ATMA2 is a N-channel MOSFET primarily used in power management applications. Key application areas include DC-DC converters, motor drives, power supplies, and renewable energy systems. Its high efficiency and fast switching capabilities make it suitable for automotive, industrial, and consumer electronics applications, particularly in areas requiring high current handling and thermal performance.

Equivalent

The IPB120N06S4H1ATMA2 is a N-channel MOSFET. Equivalent products include the IRLZ44N, STP120N06, and BSC120N06. When searching for equivalents, consider key parameters such as voltage rating, current capacity, Rds(on), and package type to ensure compatibility. Always verify data sheets for specific applications.

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FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

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