IPB036N12N3G

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IPB036N12N3G

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Spécifications

Manufacturer Infineon Technologies
Package TO-263-7

Vue d'ensemble

Description

The IPB036N12N3G is a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) produced by Infineon Technologies. It is designed for power applications, particularly in the fields of automotive and industrial electronics. This N-channel MOSFET features a low on-resistance (RDS(on)), which allows for efficient energy conversion and reduced heat generation during operation.
Key specifications include a maximum drain-source voltage (VDS) of 1200V and a continuous drain current (ID) of 36A, making it suitable for high-voltage applications. The device is encapsulated in a TO-220 package, facilitating easy heat dissipation and mounting on heatsinks.
The IPB036N12N3G is optimized for fast switching speeds, enhancing performance in pulse width modulation (PWM) applications. It is commonly used in power supplies, motor control, and other applications where efficient power management is crucial. Overall, the IPB036N12N3G stands out for its combination of high voltage handling, efficiency, and thermal performance.

Features

The IPB036N12N3G is an N-channel Power MOSFET designed for high efficiency and fast switching applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 120V, making it suitable for various power applications.
2. Current Rating: The device can handle a continuous drain current (I_D) of up to 36A, allowing for significant power handling.
3. R_DS(on): It features a low on-resistance (R_DS(on)) of about 3.6 mΩ at V_GS = 10V, which contributes to reduced conduction losses.
4. Fast Switching: The MOSFET is optimized for rapid switching, making it ideal for applications like DC-DC converters and motor drives.
5. Thermal Performance: It is packaged in a TO-220 format, which aids in effective heat dissipation.
6. Gate Threshold Voltage: The gate-source threshold voltage (V_GS(th)) typically ranges from 2 to 4V, allowing for efficient drive with lower gate voltages.
These features make the IPB036N12N3G suitable for automotive, industrial, and consumer electronics applications.

Package

The IPB036N12N3G is packaged in a TO-220 form factor. This type of package is commonly used for power MOSFETs, providing good thermal performance and suitable for heat dissipation in various applications.

Pinout

The IPB036N12N3G is an N-channel MOSFET from Infineon Technologies, designed for power management applications. It features a TO-220 package with a pin count of 3. The functions of the pins are as follows:
1. Gate (G): The gate pin is used to control the MOSFET's on/off state by applying a voltage.
2. Drain (D): The drain pin is where the load is connected. When the MOSFET is turned on, current flows from the drain to the source.
3. Source (S): The source pin is connected to ground in typical applications, providing a return path for the current.
This MOSFET is characterized by its low on-resistance and high efficiency, making it suitable for various applications, including DC-DC converters, motor drives, and power inverters.

Manufacturer

The manufacturer of the IPB036N12N3G is Infineon Technologies AG. Infineon is a global semiconductor company based in Germany, specializing in the production of a wide range of semiconductor solutions. Their products are used in various applications, including automotive, industrial, and consumer electronics. Infineon focuses on technologies related to power management, automotive safety, and IoT (Internet of Things) solutions. They are known for their innovations in power semiconductors, particularly in the fields of energy efficiency and sustainability.

Application

The IPB036N12N3G is a MOSFET primarily used in power management applications. It is suitable for DC-DC converters, power supplies, and motor control systems. Its low on-resistance and fast switching capabilities make it ideal for energy-efficient designs in consumer electronics, automotive systems, and industrial applications. Additionally, it can be employed in renewable energy systems like solar inverters.

Equivalent

The IPB036N12N3G is an N-channel MOSFET used in power applications. Equivalent products include:
1. IRF3205
2. BSC015N15NS3
3. STP75NF75
4. FQP50N06
5. AON7410
Always verify specifications such as voltage, current ratings, and RDS(on) for compatibility in your specific application.

Expédition

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Référence des frais d'expédition (DHL/FedEx):

DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

Paiements

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