IPB026N06N

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IPB026N06N

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  • Mfr. Partie #IPB026N06N
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Spécifications

Technology Si
Packaging Reel
Brand Infineon Technologies
Product Type MOSFETs
Series OptiMOS 5
Factory Pack Quantity:Factory Pack Quantity 1000
Subcategory Transistors
Part # Aliases SP000962142 IPB26N6NXT IPB026N06NATMA1
Mounting Style SMD/SMT
Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 175 C
Height 4.4 mm
Length 10 mm
Width 9.25 mm
Unit Weight 0.139332 oz
Package / Case D2PAK-3 (TO-263-3)
Configuration Single
Tradename OptiMOS
Transistor Polarity N-Channel
Number of Channels 1 Channel
Vds - Drain-Source Breakdown Voltage 60 V
Id - Continuous Drain Current 100 A
Rds On - Drain-Source Resistance 2.3 mOhms
Vgs - Gate-Source Voltage - 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage 2.1 V
Qg - Gate Charge 66 nC
Pd - Power Dissipation 136 W
Channel Mode Enhancement
Fall Time 8 ns
Rise Time 15 ns
Transistor Type 1 N-Channel
Typical Turn-Off Delay Time 30 ns
Typical Turn-On Delay Time 17 ns
REACH - SVHC Details
Forward Transconductance - Min 80 S

Vue d'ensemble

Description

IPB026N06N is a specific model of an N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) produced by Infineon Technologies. It is designed for high-efficiency power applications, including power management in various electronic devices. This MOSFET features low on-resistance, which reduces heat generation and improves efficiency in switching applications.
The "N" indicates that it is an N-channel device, suitable for high-side or low-side switching in power electronics. The part number suggests it can handle up to 60 volts and has a continuous drain current rating that allows it to manage significant power loads. Its fast switching capabilities make it ideal for applications like DC-DC converters, motor drivers, and power supplies.
Additionally, the IPB026N06N is known for its reliability and performance in demanding environments, making it a popular choice among engineers and designers in the field of power electronics.

Features

The IPB026N06N is a N-channel MOSFET designed for efficient power management applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 60V, suitable for a range of applications.
2. Continuous Drain Current: Offers a high continuous drain current (I_D) of 26A, enabling it to handle significant loads.
3. Low R_DS(on): Features a low on-resistance (R_DS(on)) of approximately 0.026 ohms at a V_GS of 10V, enhancing efficiency and reducing heat generation.
4. Fast Switching Speed: Optimized for fast switching, making it ideal for applications like DC-DC converters and motor drives.
5. Thermal Performance: Equipped with a TO-220 package, providing excellent thermal dissipation characteristics.
6. Operating Temperature: Suitable for a wide operating temperature range, enhancing reliability in various environments.
These features make the IPB026N06N a versatile choice for automotive, industrial, and consumer electronics applications requiring efficient power handling.

Package

The IPB026N06N is typically packaged in a TO-220 format. This package type is known for its thermal performance and ease of mounting, making it suitable for power applications.

Pinout

The IPB026N06N is an N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for power applications. It typically comes in a TO-220 package, which has three pins. The pin configuration and their functions are as follows:
1. Gate (G): This pin controls the MOSFET. Applying a voltage to the gate allows current to flow between the drain and source.
2. Drain (D): This is the terminal through which the current flows out of the MOSFET. It connects to the load.
3. Source (S): This terminal is connected to the ground or the negative side of the circuit, allowing current to flow into the MOSFET.
The IPB026N06N is known for its low R_DS(on), high-speed switching, and high current handling capabilities, making it suitable for various applications in power management and switching circuits.

Manufacturer

The IPB026N06N is a power MOSFET manufactured by Infineon Technologies. Infineon is a global semiconductor company based in Germany, specializing in various sectors, including automotive, industrial power control, and secure communications. The company produces a wide range of products, including microcontrollers, sensors, and power semiconductors. Infineon's focus on innovation and energy efficiency makes it a key player in the semiconductor industry, contributing to advancements in electric vehicles, renewable energy, and various electronic applications.

Application

IPB026N06N is an N-channel MOSFET primarily used in power management applications. Its application areas include DC-DC converters, synchronous rectification, motor drives, and power supply circuits. It is ideal for high-efficiency switching in consumer electronics, automotive systems, and renewable energy systems due to its low on-resistance and high thermal stability.

Equivalent

The IPB026N06N is a N-channel MOSFET commonly used in power applications. Equivalent products include the IRF3205, BUK956-50A, STP55NF06, and AON7410. Always check the datasheets for specific voltage, current ratings, and package compatibility to ensure interchangeability.

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