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IPA60R380E6
- Fabricant
- Mfr. Partie #IPA60R380E6
- Paquet
- Fiche de données IPA60R380E6 DataSheet
- En stock4795
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Spécifications
| Packaging | Tube |
| Brand | Infineon Technologies |
| Product Type | MOSFETs |
| Subcategory | Transistors |
| Factory Pack Quantity:Factory Pack Quantity | 500 |
| Technology | Si |
| Mounting Style | Through Hole |
| Package / Case | TO-220FP-3 |
| Transistor Polarity | N-Channel |
| Number of Channels | 1 Channel |
| Vds - Drain-Source Breakdown Voltage | 600 V |
| Id - Continuous Drain Current | 10.6 A |
| Rds On - Drain-Source Resistance | 380 mOhms |
| Vgs - Gate-Source Voltage | - 20 V, + 20 V |
| Vgs th - Gate-Source Threshold Voltage | 3.5 V |
| Qg - Gate Charge | 32 nC |
| Minimum Operating Temperature | - 55 C |
| Maximum Operating Temperature | + 150 C |
| Pd - Power Dissipation | 31 W |
| Channel Mode | Enhancement |
| Tradename | CoolMOS |
| Configuration | Single |
| Fall Time | 8 nS |
| Height | 16.15 mm |
| Length | 10.65 mm |
| Rise Time | 9 nS |
| Series | CoolMOS E6 |
| Transistor Type | 1 N-Channel |
| Typical Turn-Off Delay Time | 56 nS |
| Width | 4.85 mm |
| Part # Aliases | SP000795300 IPA6R38E6XK IPA60R380E6XKSA1 |
| Unit Weight | 0.068784 oz |
Vue d'ensemble
Description
Key characteristics include a low conduction loss, fast switching speeds, and robustness, allowing it to handle high temperatures and reduce energy losses during operation. The IGBT is typically used in combination with a diode for enhanced performance in power electronics applications.
The "E6" designation indicates it is part of a specific family of products that meet stringent quality and reliability standards. Overall, the IPA60R380E6 is an effective choice for engineers looking to improve power efficiency and performance in their designs.
Features
1. Voltage Rating: It has a maximum drain-source voltage (Vds) of 600V, making it suitable for high-voltage applications.
2. Continuous Drain Current: The device supports a continuous drain current (Id) of up to 60A, allowing for significant load handling.
3. RDS(on): It exhibits a low on-resistance (RDS(on)) of approximately 0.38 ohms, which contributes to improved efficiency and reduced power loss during operation.
4. Fast Switching: The MOSFET is designed for high-speed switching, making it ideal for applications in power supplies and converters.
5. Thermal Performance: It features a robust thermal management capability, helping to maintain performance under high-temperature conditions.
6. Package Type: Typically available in a TO-220 or similar package, facilitating easy mounting and heat dissipation.
Overall, the IPA60R380E6 is well-suited for industrial and automotive applications, including power management and motor control systems.
Package
Pinout
1. Collector (C) - This is the main terminal through which the high voltage and current flow. It connects to the load in the circuit.
2. Gate (G) - This terminal is used to control the switching of the IGBT. Applying a voltage here turns the device on or off.
3. Emitter (E) - This pin is connected to the ground or the negative side of the power supply, completing the circuit for current flow.
The specific pin configuration may vary slightly depending on the manufacturer and packaging, so it's essential to consult the datasheet for detailed information.
Manufacturer
Application
Equivalent
Expédition
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UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.
TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.
EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.
Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.
Paiements
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