IPA60R280P7S

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IPA60R280P7S

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Spécifications

Packaging Tube
Brand Infineon Technologies
Product Type MOSFETs
Subcategory Transistors
Technology Si

Vue d'ensemble

Description

The IPA60R280P7S is a power MOSFET (metal-oxide-semiconductor field-effect transistor) designed for high-efficiency and high-performance applications. It belongs to the Infineon CoolMOS™ P7 series, which is known for its low on-resistance (RDS(on)), enabling reduced conduction losses. This device is particularly suitable for applications such as power supplies, renewable energy converters, and motor drives due to its fast switching capabilities and excellent thermal performance.
Key specifications include a maximum drain-source voltage (VDS) of 600V and a continuous drain current (ID) of 28A, making it robust for high-voltage applications. Its low gate charge enhances switching efficiency, resulting in minimized electromagnetic interference (EMI) and improved overall system reliability. This MOSFET is ideal for engineers seeking to optimize power management in their designs, balancing efficiency, thermal performance, and reliability.

Features

The IPA60R280P7S is an N-channel MOSFET designed for high-efficiency switching applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 600V, making it suitable for high-voltage applications.
2. Continuous Drain Current: It can handle a continuous drain current (I_D) of up to 280A, allowing for robust performance in demanding conditions.
3. Low On-Resistance: The R_DS(on) is typically low, around 0.280 ohms, which helps minimize power losses during operation.
4. Fast Switching Speed: Optimized for rapid switching, enhancing efficiency in applications such as power supplies and motor drives.
5. Thermal Performance: With a thermal resistance (RθJA) designed for effective heat dissipation, it supports reliable operation at elevated temperatures.
6. Package Type: Typically available in a TO-247 package, facilitating easy mounting and heat management.
These features make the IPA60R280P7S ideal for applications like inverters, converters, and industrial motor control.

Package

The IPA60R280P7S is typically housed in a TO-247 package type, which is a widely used package for power transistors and MOSFETs, allowing for effective thermal management and mounting flexibility.

Pinout

The IPA60R280P7S is a N-channel MOSFET with a total of 4 pins. The pin configuration is as follows:
1. Gate (G): This pin controls the MOSFET and is used to turn the device on or off.
2. Drain (D): The current flows out of this pin when the MOSFET is in the on state.
3. Source (S): This pin serves as the return path for the current flowing through the MOSFET.
4. Body Diode: While not a separate pin, the device includes an internal body diode that allows current to flow in the reverse direction when the MOSFET is off.
The IPA60R280P7S is specifically designed for high-voltage applications, featuring a maximum drain-source voltage (V_DS) of 600V and a continuous drain current (I_D) of approximately 280A, making it suitable for various power electronics applications.

Manufacturer

The manufacturer of the IPA60R280P7S is Infineon Technologies AG. Infineon is a German semiconductor manufacturer specializing in a wide range of semiconductor solutions, including power semiconductors, microcontrollers, and sensors. The company serves various industries, including automotive, industrial, and consumer electronics, focusing on energy efficiency, mobility, and safety solutions. Infineon is well-known for its expertise in power management and is a key player in the global semiconductor market.

Application

The IPA60R280P7S is an IGBT (Insulated Gate Bipolar Transistor) suitable for various applications, including industrial motor drives, power inverters, renewable energy systems (like solar and wind), electric vehicles, and UPS (uninterruptible power supplies). Its high voltage and current ratings make it ideal for energy-efficient power conversion and switching applications in both consumer and industrial sectors.

Equivalent

The IPA60R280P7S is an IGBT (Insulated Gate Bipolar Transistor) with a voltage rating of 600V and a current rating of 280A. Equivalent products include:
1. Infineon IGBT Series: IPT60R280P7
2. ON Semiconductor: MUR60R280P7
3. STMicroelectronics: STGW60H65
Always check datasheets for specifics like switching frequency and thermal characteristics for compatibility.

Expédition

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Référence des frais d'expédition (DHL/FedEx):

DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

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