IKW40N60H3

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IKW40N60H3

IGBTs 600V 40A 306W

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Spécifications

Packaging Tube
Standard Pack Qty 240

Vue d'ensemble

Description

The IKW40N60H3 is a high-performance insulated gate bipolar transistor (IGBT) designed for use in various power electronics applications, including motor drives, inverters, and power supplies. With a blocking voltage of 600V and a maximum continuous collector current of 40A, it is well-suited for demanding applications requiring efficient power management.
This IGBT features a low conduction loss and fast switching capabilities, enabling efficient operation and reduced thermal stress. Its low gate drive requirements simplify circuit design while improving system reliability. The IKW40N60H3 is designed using advanced semiconductor technology, ensuring robust performance and high efficiency.
It is commonly used in applications such as renewable energy systems, automotive power electronics, and industrial equipment. The package typically includes a thermal interface for effective heat dissipation, further enhancing its reliability and longevity in various operating conditions. Overall, the IKW40N60H3 is an excellent choice for engineers seeking efficient, high-performance switching solutions in their designs.

Features

The IKW40N60H3 is a high-voltage, N-channel MOSFET designed for power applications. Key features include:
- Voltage Rating: 600V maximum drain-source voltage (V_DS).
- Continuous Drain Current: 40A at 25°C, suitable for high-power applications.
- Low Gate Charge: Approximately 58 nC, enhancing efficiency and reducing switching losses.
- R_DS(on): Low on-resistance (0.23 ohms at V_GS = 10V), which minimizes conduction losses.
- Fast Switching Speed: Ideal for applications requiring high-speed operation.
- Thermal Resistance: Excellent thermal performance, with a junction-to-case thermal resistance (R_thJC) of 0.5 °C/W, suitable for demanding thermal environments.
- Package: Available in a TO-247 package, which facilitates effective heat dissipation.
- Applications: Suitable for use in power supplies, converters, inverters, and motor control systems.
Overall, the IKW40N60H3 is optimized for high-efficiency, high-voltage applications requiring robust performance.

Package

The IKW40N60H3 is packaged in a TO-247 housing. This package type is commonly used for high-power devices, providing good thermal performance and allowing for efficient heat dissipation.

Pinout

The IKW40N60H3 is a high-voltage N-channel MOSFET designed for various applications, including power supplies and motor drives. It features a TO-247 package, which typically has three pins.
The pin configuration is as follows:
1. Gate (G): This pin is used to control the MOSFET. Applying a voltage here turns the device on or off.
2. Drain (D): This pin connects to the load and allows current to flow from the drain to the source when the MOSFET is turned on.
3. Source (S): This pin is connected to the ground or the negative side of the circuit, completing the circuit when the MOSFET is activated.
The IKW40N60H3 can handle a maximum drain-source voltage of 600V and a continuous drain current of 40A, making it suitable for high-power applications.

Manufacturer

The IKW40N60H3 is manufactured by Infineon Technologies, a global semiconductor company headquartered in Neubiberg, Germany. Infineon specializes in semiconductor solutions for various applications, including automotive, industrial, and consumer electronics. The company is known for its focus on power semiconductors, microcontrollers, and sensors, providing innovative products that enhance energy efficiency and connectivity. Infineon operates in multiple markets, emphasizing sustainability and digitalization in its technology offerings.

Application

The IKW40N60H3 is a 600V IGBT (Insulated Gate Bipolar Transistor) primarily used in high-power applications such as motor drives, induction heating, power inverters, and renewable energy systems like solar inverters. It is suitable for switching applications due to its low conduction losses and high efficiency, making it ideal for industrial and consumer electronics that require robust performance and thermal management.

Equivalent

The IKW40N60H3 is an IGBT (Insulated Gate Bipolar Transistor) used in power applications. Equivalent products include the IRG4PH50KD, FGA40N60, and MG40N60. Always confirm specifications like voltage, current ratings, and switching characteristics when considering replacements.

Expédition

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Référence des frais d'expédition (DHL/FedEx):

DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

Paiements

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