IKW40N60DTP

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IKW40N60DTP

  • Fabricant
  • Mfr. Partie #IKW40N60DTP
  • Paquet
  • Fiche de données
  • En stock5520

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Spécifications

Brand GigaDevice
Product Type NOR Flash
Subcategory Memory & Data Storage
Series GD25Q32E
Mounting Style SMD/SMT
Interface Type SPI
Minimum Operating Temperature - 40 C
Maximum Operating Temperature + 85 C
Supply Voltage - Min 2.7 V
Supply Voltage - Max 3.6 V
Memory Size 32 Mbit
Package / Case SOP-8
Maximum Clock Frequency 133 MHz
Organization 4 M x 8
Active Read Current - Max 25 mA
Factory Pack Quantity:Factory Pack Quantity 1
Data Bus Width 8 bit

Vue d'ensemble

Description

The IKW40N60DTP is a high-performance N-channel MOSFET designed for power electronics applications. It features a voltage rating of 600V and a continuous drain current of up to 40A, making it suitable for high-voltage and high-current applications like power supplies, motor drives, and industrial equipment.
Key characteristics include low on-resistance, fast switching speeds, and high thermal stability, which contribute to increased efficiency and reduced heat generation. The device is typically housed in a TO-247 package, allowing for effective heat dissipation.
With its robust design, the IKW40N60DTP is ideal for use in switch-mode power supplies (SMPS) and other applications requiring reliable performance under demanding conditions. Its attributes enable engineers to optimize circuit designs for efficiency and reliability in various electronic applications.

Features

The IKW40N60DTP is a high-voltage IGBT (Insulated Gate Bipolar Transistor) designed for various power applications. Key features include:
1. Voltage Rating: It has a maximum collector-emitter voltage (Vce) of 600V, making it suitable for medium-voltage applications.
2. Current Rating: It can handle a continuous collector current (Ic) of up to 40A.
3. Low On-State Voltage: Offers low on-state voltage drop for improved efficiency.
4. Fast Switching Speed: Designed for high-speed operation, which is beneficial in switching applications.
5. Thermal Stability: Features good thermal stability and performance, accommodating high temperature conditions.
6. Package Type: Typically available in a TO-247 package, facilitating easy heat dissipation and mounting.
7. Applications: Commonly used in motor drives, inverters, and power supplies.
These characteristics make the IKW40N60DTP suitable for energy-efficient designs in industrial applications.

Package

The IKW40N60DTP is packaged in a TO-247 type package. This package type is commonly used for high-power applications, offering good thermal performance and ease of mounting in various electronic circuits.

Pinout

The IKW40N60DTP is an N-channel MOSFET designed for high-voltage applications. It features a total of 5 pins. The pin configuration is as follows:
1. Gate (G) - Controls the MOSFET's switching.
2. Drain (D) - The terminal through which the current flows out when the device is on.
3. Source (S) - The terminal through which the current enters when the device is on.
4. Drain (D) - Another drain pin for better heat dissipation (common in dual-drain designs).
5. Source (S) - A secondary source pin to enhance performance and thermal management.
The IKW40N60DTP is rated for a voltage of 600V and a current of 40A, making it suitable for use in power supplies, converters, and motor drives. It is ideal for applications needing high efficiency and reliability.

Manufacturer

The IKW40N60DTP is manufactured by Infineon Technologies AG, a German company that specializes in semiconductor and system solutions. Infineon is a leading global provider of semiconductor products, focusing on areas such as automotive, industrial power control, and security technologies. The company develops a wide range of products, including power semiconductors, microcontrollers, and sensors, catering to various applications in automotive, consumer electronics, and industrial sectors. Founded in 1999, Infineon has established itself as a key player in the semiconductor industry, emphasizing innovation and sustainability in its offerings.

Application

The IKW40N60DTP is an IGBT (Insulated Gate Bipolar Transistor) primarily used in industrial applications such as motor drives, power inverters, and welding equipment. Its high voltage and current handling capabilities make it suitable for renewable energy systems, such as solar inverters and wind turbines, as well as in power supplies and UPS systems. The device's efficiency and thermal management features also lend themselves to applications in electric vehicles and traction systems.

Equivalent

The IKW40N60DTP is a high-voltage IGBT (Insulated Gate Bipolar Transistor) used in power applications. Equivalent products include the IRG4BC30KD and the FGH40N60SMD. Always verify specifications for voltage, current ratings, and switching characteristics to ensure compatibility in your specific application.

Expédition

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Référence des frais d'expédition (DHL/FedEx):

DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

Paiements

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