IKW30N65ES5

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IKW30N65ES5

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  • Mfr. Partie #IKW30N65ES5
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Spécifications

Packaging Tube
Brand Infineon Technologies
Product Type IGBT Transistors
Subcategory IGBTs
Maximum Gate Emitter Voltage - 20 V, 20 V
Series TRENCHSTOP 5 S5
Package / Case TO-247-3
Mounting Style Through Hole
Minimum Operating Temperature - 40 C
Maximum Operating Temperature + 175 C
Unit Weight 1.340411 oz
Factory Pack Quantity:Factory Pack Quantity 240
Part # Aliases SP001319678 IKW30N65ES5XKSA1
Technology Si
Configuration Single
Collector- Emitter Voltage VCEO Max 650 V
Collector-Emitter Saturation Voltage 1.35 V
Continuous Collector Current at 25 C 62 A
Pd - Power Dissipation 188 W
Gate-Emitter Leakage Current 100 nA
Tradename TRENCHSTOP
Height 5.21 mm
Length 21.1 mm
Width 16.13 mm
Operating Temperature Range - 40 C to + 175 C

Vue d'ensemble

Description

The IKW30N65ES5 is a high-performance N-channel MOSFET manufactured by Infineon Technologies, designed for power electronics applications. It features a maximum drain-source voltage (V_DS) of 650V and a continuous drain current (I_D) rating of 30A, making it suitable for high-voltage and high-current applications such as power supplies and motor drives.
Key characteristics include low R_DS(on) for efficient operation, fast switching speeds, and robust thermal performance, which help minimize energy losses and improve overall system efficiency. The device is also designed to handle high-temperature environments, enhancing reliability in demanding applications.
The IKW30N65ES5 is typically used in industrial applications, including inverters, converters, and other power management systems, making it a versatile choice for engineers looking to optimize performance in their designs.

Features

The IKW30N65ES5 is an N-channel MOSFET designed for high-voltage applications. Key features include:
1. Voltage Rating: It supports a maximum drain-source voltage (V_DS) of 650V, making it suitable for high-voltage power supply applications.
2. Current Rating: The device has a continuous drain current (I_D) of up to 30A, allowing it to handle significant loads.
3. Low On-Resistance: The R_DS(on) is typically low, which improves efficiency by reducing power loss during operation.
4. Fast Switching: The MOSFET offers fast switching times, contributing to better performance in high-frequency applications.
5. Thermal Performance: It features a robust package that enhances thermal management, allowing for operation at higher temperatures.
6. Gate Threshold Voltage: The gate threshold voltage (V_GS(th)) is designed for compatibility with standard drive voltages, facilitating easy integration into circuits.
These attributes make the IKW30N65ES5 suitable for applications such as power converters, inverters, and motor control.

Package

The IKW30N65ES5 is typically packaged in a TO-220 format, which is a standard package for power transistors. This package type allows for effective heat dissipation and is suitable for high-power applications.

Pinout

The IKW30N65ES5 is a high-voltage IGBT (Insulated Gate Bipolar Transistor) used in power electronics applications. It typically comes in a TO-247 package, which features three pins. The pin configuration is as follows:
1. Gate (G): This pin is used to control the switching of the IGBT. A voltage applied to the gate allows the device to conduct.
2. Collector (C): This pin is connected to the high-voltage side of the circuit. It is the terminal through which the main current flows when the IGBT is in the 'on' state.
3. Emitter (E): This pin is connected to the low-voltage side and serves as the return path for the current flowing through the IGBT when it is conducting.
The IKW30N65ES5 is rated for a maximum collector-emitter voltage of 650V and a maximum continuous collector current of 30A, making it suitable for various applications such as inverters and motor drives.

Manufacturer

The IKW30N65ES5 is manufactured by Infineon Technologies AG, a German semiconductor manufacturer. Infineon specializes in producing a wide range of products, including power semiconductors, sensors, microcontrollers, and automotive electronics. The company is known for its innovations in power management and efficiency, catering to various industries such as automotive, industrial, and consumer electronics. Infineon is recognized for its commitment to sustainability and advancing technologies that support energy efficiency and renewable energy applications.

Application

The IKW30N65ES5 is a high-voltage IGBT (Insulated Gate Bipolar Transistor) primarily used in applications such as industrial motor drives, renewable energy systems (like solar inverters), and power supplies. Its efficiency and performance make it suitable for switching applications in electric vehicles, traction systems, and UPS (uninterruptible power supplies).

Equivalent

The IKW30N65ES5 is a 650V, 30A N-channel IGBT. Equivalent products include:
1. IRG4BC30KD - 650V, 30A IGBT
2. FGA30N65 - 650V, 30A IGBT
3. MG100J6ES - 600V, 100A IGBT (higher current)
4. STGW30NC65 - 650V, 30A IGBT
Always check specific datasheets for voltage, current ratings, and switching characteristics before substitution.

Expédition

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Référence des frais d'expédition (DHL/FedEx):

DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

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