IKW30N60T

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IKW30N60T

IKW30N60 - DISCRETE IGBT WITH AN

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Spécifications

Package Bulk
ProductStatus Active
IGBTType Trench Field Stop
Voltage-CollectorEmitterBreakdown(Max) 600 V
Current-Collector(Ic)(Max) 45 A
Current-CollectorPulsed(Icm) 90 A
Vce(on)(Max)@VgeIc 2.05V @ 15V, 30A
Power-Max 187 W
SwitchingEnergy 690µJ (on), 770µJ (off)
InputType Standard
GateCharge 167 nC
Td(on/off)@25°C 23ns/254ns
TestCondition 400V, 30A, 10.6Ohm, 15V
ReverseRecoveryTime(trr) 143 ns
OperatingTemperature -40°C ~ 175°C (TJ)
MountingType Through Hole
Package/Case TO-247-3

Vue d'ensemble

Description

The IKW30N60T is a high-voltage, N-channel insulated gate bipolar transistor (IGBT) designed for use in various power electronic applications. It features a voltage rating of 600 V and a maximum continuous current of 30 A, making it suitable for medium-power applications such as motor drives, inverters, and power supplies.
This device combines the advantages of both MOSFETs and bipolar transistors, offering fast switching speeds and high efficiency, while also handling high current levels. The IKW30N60T is characterized by low on-state voltage drop, reduced switching losses, and improved thermal performance, enhancing overall system efficiency.
The IGBT is housed in a TO-247 package, providing adequate thermal management for demanding applications. Its rugged construction ensures reliability in harsh environments. Overall, the IKW30N60T is an effective choice for engineers seeking efficient and reliable solutions in industrial and consumer electronics.

Features

The IKW30N60T is an N-channel MOSFET designed for high-performance applications. Key features include:
1. Voltage Rating: 600V maximum drain-source voltage, making it suitable for high-voltage applications.
2. Current Rating: Continuous drain current of 30A, allowing for significant load handling.
3. RDS(on): Low on-resistance, typically around 0.15Ω, which ensures efficient power conversion and reduced heat generation.
4. Gate Threshold Voltage: VGS(th) in the range of 2-4V, enabling easy gate driving.
5. Fast Switching Speed: Capable of high-frequency operation, beneficial for applications like power supplies and inverters.
6. Robust Package: Available in a TO-247 package, providing effective heat dissipation and reliability in demanding environments.
7. Thermal Resistance: Low thermal resistance for enhanced performance in high-temperature conditions.
Overall, the IKW30N60T is well-suited for industrial, automotive, and power electronics applications requiring high efficiency and reliability.

Package

The IKW30N60T is typically packaged in a TO-247 format. This package type is known for its robust design, suitable for high-power applications, providing good thermal performance and ease of mounting.

Pinout

The IKW30N60T is an N-channel MOSFET designed for high-voltage applications, with a pin count of 3. The pin configuration is as follows:
1. Gate (G): This pin controls the MOSFET operation. It receives the input signal that turns the device on or off.

2. Drain (D): This pin is the output terminal where the load is connected. It allows current to flow from the drain to the source when the MOSFET is turned on.
3. Source (S): This pin is connected to the ground or negative side of the circuit. It serves as the reference point for the gate voltage.
The IKW30N60T is rated for a maximum drain-source voltage of 600V and a continuous drain current of 30A, making it suitable for use in power supply circuits, inverters, and motor control applications.

Manufacturer

The IKW30N60T is manufactured by Infineon Technologies AG, a leading global semiconductor company headquartered in Germany. Infineon specializes in providing semiconductor solutions for various applications, including automotive, industrial power control, and consumer electronics. The company focuses on innovation in power semiconductors, microcontrollers, and sensors, aiming to enable energy efficiency and connectivity in a wide range of technologies. Infineon is recognized for its commitment to sustainability and advancing the development of technologies that support the transition to a more efficient and greener economy.

Application

The IKW30N60T is an IGBT (Insulated Gate Bipolar Transistor) primarily used in medium to high-power applications. Common application areas include:
1. Industrial Motor Drives: For controlling motor speed and torque.
2. Renewable Energy Systems: Inverters for solar and wind energy conversion.
3. Welding Equipment: For regulating high current loads.
4. Power Supplies: In switch-mode power supplies (SMPS).
5. HVAC Systems: For efficient heating and cooling controls.
Its high voltage and current ratings make it suitable for various demanding applications.

Equivalent

Equivalent products to the IKW30N60T include the Infineon IKW30N60T2, STMicroelectronics STW30N60M2, and ON Semiconductor NGTB30N60LT4. These alternatives share similar specifications such as voltage rating (600V), current rating (30A), and Rds(on) characteristics suitable for high-voltage applications. Always verify specific parameters and ratings for your application before substitution.

Expédition

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Référence des frais d'expédition (DHL/FedEx):

DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

Paiements

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