IKW30N60H3

Les images sont à titre de référence seulement

IKW30N60H3

IGBTs 600V 30A 187W

100% original & Nouveau

24 heures prêtes à expédier

Garantie 365 jours

RFQ et Obtenez plus de rabais

Spécifications

Packaging Tube
Standard Pack Qty 240

Vue d'ensemble

Description

The IKW30N60H3 is a high-voltage IGBT (Insulated Gate Bipolar Transistor) designed for use in various power electronics applications. With a maximum voltage rating of 600V and a continuous current rating of 30A, it is ideal for use in inverters, motor drives, and power supplies.
Key features include low conduction and switching losses, making it suitable for efficient energy conversion. Its fast switching capabilities allow for higher operational frequencies, enhancing overall system performance. The IKW30N60H3 also includes a built-in anti-parallel diode for improved reverse recovery characteristics, crucial for many applications.
Typically packaged in a TO-247 format, it provides good thermal performance, facilitating effective heat dissipation. This IGBT is often utilized in industries like renewable energy, automotive, and industrial automation, where reliability and efficiency are critical. Overall, the IKW30N60H3 is a reliable choice for demanding power applications, combining robustness with high efficiency.

Features

The IKW30N60H3 is an N-channel MOSFET designed for high-voltage applications. Key features include:
1. Voltage Rating: 600V, suitable for high-voltage environments.
2. Current Rating: 30A continuous drain current, allowing for robust power handling.
3. On-Resistance (RDS(on)): Low on-resistance of around 0.3 ohms, which improves efficiency by reducing power loss during operation.
4. Gate Threshold Voltage: Compatible with standard gate drive voltages, facilitating easy integration into circuits.
5. Fast Switching Speed: Ideal for applications requiring quick response times, such as inverters and converters.
6. Package Type: H3-PAK, which provides good thermal management and mechanical integrity.
7. Thermal Resistance: Low thermal resistance enhances reliability under heavy load conditions.
These features make the IKW30N60H3 suitable for use in power supplies, motor drives, and other high-performance applications.

Package

The IKW30N60H3 is typically packaged in a TO-247 package type. This package is designed for high-power applications, providing excellent thermal performance and robustness.

Pinout

The IKW30N60H3 is a 600V, 30A N-channel IGBT (Insulated Gate Bipolar Transistor) used primarily in power electronics applications. It comes in a TO-247 package, which typically has three pins. The pin configuration and their functions are as follows:
1. Gate (G): This pin is used to control the switching of the IGBT. A voltage applied to the gate allows the device to turn on and conduct current.
2. Collector (C): This pin connects to the load and is where the primary current flows when the IGBT is in the on state.
3. Emitter (E): This pin is connected to the ground or the negative side of the circuit and serves as the return path for the current flowing through the collector.
The IKW30N60H3 is designed for applications such as motor drives, induction heating, and inverters, offering high efficiency and fast switching characteristics.

Manufacturer

The IKW30N60H3 is manufactured by Infineon Technologies AG, a German semiconductor manufacturer. Infineon specializes in producing a wide range of semiconductor solutions, including power semiconductors, automotive electronics, and security solutions. The company is recognized for its innovations in areas such as energy efficiency, mobility, and security, catering to various industries including automotive, industrial, and consumer electronics. Infineon is a key player in the semiconductor market, known for its focus on high-performance and reliable products.

Application

The IKW30N60H3 is a high-voltage IGBT (Insulated Gate Bipolar Transistor) used in various applications, including industrial motor drives, renewable energy systems (like solar inverters), traction drives in trains, and power supplies. Its high efficiency and robustness make it suitable for switching applications in automotive and industrial sectors, specifically in high-power converters and inverters.

Equivalent

The IKW30N60H3 is a 600V IGBT primarily used in power electronics applications. Equivalent products include the Infineon IGBT series such as IKW30N60T and the ON Semiconductor FGH60N60SFD. Other alternatives may include devices from Toshiba and Mitsubishi, which provide similar voltage and current ratings. Always verify specifications like VCE, IC, and thermal characteristics before substitution.

Expédition

Méthodes d'expéditionNous

offrir des services d'expédition mondiaux par DHL, FedEx, TNT, UPS ou tout autre expéditeur de votre choix.


Référence des frais d'expédition (DHL/FedEx):

DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

Paiements

Payment Methods

Le terme de paiement est 100% prépayé.

Actuellement, nous n'acceptons que les méthodes de paiement ci-dessous:

1. PayPal

2. Carte de crédit/débit

3. Transfert bancaire

Similaire