IKW25N120T2

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IKW25N120T2

IGBTs LOW LOSS DuoPack 1200V 25A

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Spécifications

Packaging Tube
Standard Pack Qty 240

Vue d'ensemble

Description

The IKW25N120T2 is an IGBT (Insulated Gate Bipolar Transistor) designed for high-performance applications, particularly in power electronics. It is rated for a collector-emitter voltage of 1200V and a continuous collector current of 25A. This device is characterized by its low on-state voltage drop and high switching speeds, making it suitable for applications such as motor drives, inverters, and power supplies.
The IKW25N120T2 features a robust construction that allows it to handle high switching frequency and temperature variations, enhancing its reliability in demanding environments. It is often used in conjunction with other components, such as drivers and diodes, to create efficient power conversion systems.
The device is housed in a TO-247 package, which provides good thermal performance and ease of mounting. Overall, the IKW25N120T2 is an excellent choice for engineers looking for efficient and reliable solutions in medium to high power applications.

Features

The IKW25N120T2 is a high-voltage, N-channel IGBT (Insulated Gate Bipolar Transistor) designed for use in various power applications. Key features include:
1. Voltage Rating: 1200V, suitable for high-voltage applications.
2. Current Rating: 25A, providing robust performance in power conversion.
3. Low On-State Voltage: Ensures reduced conduction losses, enhancing efficiency.
4. Fast Switching Speed: Allows for better performance in high-frequency applications.
5. Low Gate-Threshold Voltage: Facilitates easier drive requirements.
6. Soft Recovery: Minimizes switching losses and electromagnetic interference (EMI).
7. Robust Package: Typically available in a TO-247 or similar package for effective thermal management.
8. High Reliability: Designed for long-term operation in demanding environments.
These characteristics make the IKW25N120T2 ideal for applications in inverters, motor drives, and industrial power supplies.

Package

The IKW25N120T2 is packaged in a TO-247 format. This package type is known for its robust thermal performance and is commonly used for high-power applications in IGBT modules.

Pinout

The IKW25N120T2 is an IGBT (Insulated Gate Bipolar Transistor) module with a total of 5 pins. The pin configuration typically includes:
1. Collector (C) - Main terminal for the collector, where the load is connected.
2. Gate (G) - Terminal that controls the switching operation; it receives the control signal.
3. Emitter (E) - Main terminal for the emitter, connected to the ground or negative side of the load.
4. Thermal Pad - Not a pin but often used for heat dissipation; may be electrically isolated or connected to the case.
The IKW25N120T2 is designed for high-voltage applications, handling up to 1200V and can carry a continuous current of 25A. Its primary function is to switch and control power in various industrial applications, including motor drives and power inverters.

Manufacturer

The IKW25N120T2 is manufactured by Infineon Technologies AG, a German semiconductor manufacturer. Infineon specializes in providing a wide range of semiconductor solutions, including power semiconductors, microcontrollers, sensors, and automotive electronics. The company focuses on various markets such as automotive, industrial, and communication technologies. Infineon is recognized for its innovation and expertise in enabling efficient energy management and connectivity in electronic devices. Founded in 1999, the company has established itself as a key player in the global semiconductor industry.

Application

The IKW25N120T2 is a 1200V, 25A IGBT (Insulated Gate Bipolar Transistor) used primarily in high-power applications. Its application areas include industrial motor drives, induction heating, renewable energy systems (like solar inverters), and UPS (Uninterruptible Power Supplies). Additionally, it is suitable for converters in electric vehicles and various power electronics applications requiring efficient switching and high voltage handling.

Equivalent

The IKW25N120T2 is an IGBT (Insulated Gate Bipolar Transistor) with a voltage rating of 1200V and a current rating of 25A. Equivalent products include the Infineon IGBT series, such as the IKW25N120H3, and the Mitsubishi MGF20N120. Additionally, consider the ON Semiconductor NGTB25N120 or the STMicroelectronics STG25N120. Always check the datasheets for specific parameters to ensure compatibility.

Expédition

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Référence des frais d'expédition (DHL/FedEx):

DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

Paiements

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