IKQ40N120CH3

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IKQ40N120CH3

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  • Mfr. Partie #IKQ40N120CH3
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Spécifications

Packaging Tube
Brand Infineon Technologies
Product Type IGBT Transistors
Subcategory IGBTs
Maximum Gate Emitter Voltage - 20 V, 20 V

Vue d'ensemble

Description

The IKQ40N120CH3 is a high-performance insulated gate bipolar transistor (IGBT) designed for various power electronic applications. It features a voltage rating of 1200 volts and a maximum continuous current of 40 amperes, making it suitable for medium power applications, including motor drives, inverters, and switch-mode power supplies.
This IGBT is known for its low conduction and switching losses, which enhance efficiency and thermal management in power systems. The device also offers fast switching capabilities and rugged reliability, ensuring optimal performance in demanding conditions. Its insulated gate allows for easy control, similar to MOSFETs, which simplifies circuit design.
The IKQ40N120CH3 is often used in applications requiring robust power handling and efficiency, such as renewable energy systems (like solar inverters), industrial automation, and power conversion systems. Overall, it is a versatile component that balances performance and efficiency, making it a popular choice among engineers in the power electronics industry.

Features

The IKQ40N120CH3 is an IGBT (Insulated Gate Bipolar Transistor) module designed for high-power applications. Key features include:
1. Voltage Rating: It has a collector-emitter voltage (V_CE) rating of 1200V, suitable for medium-voltage applications.
2. Current Rating: The maximum continuous collector current (I_C) is 40A, allowing it to handle significant loads.
3. Low Switching Losses: Optimized for high efficiency, it offers low switching and conduction losses, enhancing overall performance.
4. Thermal Management: It is designed with a good thermal resistance, facilitating effective heat dissipation, which is critical for reliability.
5. Package Type: The module typically comes in a compact package, allowing for easy integration into power electronic designs.
6. Applications: Commonly used in industrial motor drives, power inverters, and renewable energy systems like solar inverters.
Overall, the IKQ40N120CH3 is ideal for applications requiring efficient power switching and high reliability.

Package

The IKQ40N120CH3 is packaged in a TO-247 format. This package type is commonly used for high-power applications, providing excellent thermal performance and mechanical stability.

Pinout

The IKQ40N120CH3 is an IGBT (Insulated Gate Bipolar Transistor) module from Infineon Technologies. It features a pin count of 7 pins.
The primary functions of these pins include:
1. Gate (G): Controls the switching of the IGBT.
2. Collector (C): Connects to the high-voltage side of the circuit.
3. Emitter (E): Connects to the ground or low-voltage side.
4. Auxiliary pins: Often used for additional functions such as temperature sensing or providing feedback.
This IGBT module is designed for high-voltage applications, typically supporting up to 1200V, and is optimized for fast switching and low conduction losses, making it suitable for power conversion applications like inverters and motor drives.

Manufacturer

The IKQ40N120CH3 is manufactured by Infineon Technologies AG, a German semiconductor manufacturer. Infineon specializes in the production of semiconductor and system solutions, focusing on automotive, industrial, and multimarket applications. The company is known for its expertise in power semiconductors, microcontrollers, and sensors, which are used in a variety of industries, including automotive electronics, power management, and IoT (Internet of Things). Infineon is recognized for its commitment to innovation and sustainability, aiming to contribute to energy efficiency and the transition to renewable energy sources.

Application

The IKQ40N120CH3 is a high-voltage IGBT (Insulated Gate Bipolar Transistor) primarily used in power electronics applications. Its application areas include renewable energy systems (e.g., solar inverters), industrial motor drives, uninterruptible power supplies (UPS), and electric vehicle drives. It is suitable for high-efficiency power conversion and switching applications due to its high voltage and current ratings.

Equivalent

The IKQ40N120CH3 is a 1200V, 40A IGBT. Equivalent products include the Infineon IGBT modules like the IKW40N120T2, the Mitsubishi MG75J120, and the ON Semiconductor MJD120. Always verify specifications and ratings to ensure compatibility with your application.

Expédition

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Référence des frais d'expédition (DHL/FedEx):

DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

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