IKD06N60R

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IKD06N60R

IGBT TRENCH 600V 12A TO252-3

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Spécifications

Supplier Infineon Technologies,Rochester Electronics, LLC
Package Tape & Reel (TR),Cut Tape (CT),Bulk
Series TrenchStop®
ProductStatus Obsolete
IGBTType Trench
Voltage-CollectorEmitterBreakdown(Max) 600 V
Current-Collector(Ic)(Max) 12 A
Current-CollectorPulsed(Icm) 18 A
Vce(on)(Max)@VgeIc 2.1V @ 15V, 6A
Power-Max 100 W
SwitchingEnergy 330µJ
InputType Standard
GateCharge 48 nC
Td(on/off)@25°C 12ns/127ns
TestCondition 400V, 6A, 23Ohm, 15V
ReverseRecoveryTime(trr) 68 ns
OperatingTemperature -40°C ~ 175°C (TJ)
MountingType Surface Mount
Package/Case TO-252-3, DPak (2 Leads + Tab), SC-63

Vue d'ensemble

Description

The IKD06N60R is a high-performance N-channel MOSFET designed for power management applications. It features a maximum drain-source voltage (V_DS) of 600V and a continuous drain current (I_D) rating of 6A. This device is ideal for use in switch-mode power supplies, inverters, and other high-voltage applications due to its low on-resistance (R_DS(on)), which enhances efficiency by reducing power losses during operation.
The IKD06N60R offers fast switching capabilities, making it suitable for high-frequency applications. Its robust thermal characteristics allow for effective heat dissipation, ensuring reliable performance under various operating conditions. With a gate threshold voltage (V_GS(th)) that ensures easy drive with standard logic levels, it can be integrated into diverse circuit topologies.
Overall, the IKD06N60R is a versatile and reliable component for engineers looking to optimize power efficiency in their designs. Always refer to the manufacturer’s datasheet for detailed specifications and application guidelines.

Features

The IKD06N60R is an N-channel MOSFET designed for high-voltage applications. Key features include:
1. Voltage Rating: It can handle a maximum drain-source voltage (Vds) of 600V, making it suitable for high-voltage circuits.
2. Current Rating: It supports a continuous drain current (Id) of up to 6A.
3. Rds(on): The on-state resistance is low, typically around 1.4 ohms, which helps minimize power losses during operation.
4. Gate Threshold Voltage: It has a gate threshold voltage (Vgs) ranging from 2 to 4V, allowing it to be driven effectively with standard logic levels.
5. Switching Speed: The device is optimized for fast switching, making it ideal for applications such as power supplies and motor drivers.
6. Package: Available in a TO-220 package, facilitating heat dissipation.
7. Applications: Commonly used in switch-mode power supplies (SMPS), inverters, and other high-efficiency power applications.
Overall, the IKD06N60R offers a reliable solution for high-voltage switching needs.

Package

The IKD06N60R is typically packaged in a TO-220 case type, which is a standard package for power MOSFETs. This package allows for efficient heat dissipation and easy mounting on heatsinks, making it suitable for high-power applications.

Pinout

The IKD06N60R is a N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high-voltage applications. It typically features a 3-pin configuration:
1. Gate (G): This pin is used to control the MOSFET's switching on and off by applying a voltage.
2. Drain (D): This is the output terminal where the load is connected. Current flows from the drain to the source when the MOSFET is on.
3. Source (S): This pin is connected to the ground or the negative side of the power supply. Current flows out of this terminal when the MOSFET is conducting.
The IKD06N60R is rated for a maximum drain-source voltage (V_DS) of 600V and a continuous drain current (I_D) of around 6A, making it suitable for various power electronics applications such as power supplies and motor controllers.

Manufacturer

The IKD06N60R is manufactured by STMicroelectronics, a multinational electronics and semiconductor company. STMicroelectronics is known for its wide range of semiconductor products, including integrated circuits, microcontrollers, and power devices. The company serves various markets, including automotive, industrial, personal electronics, and communication. With a focus on innovation and sustainability, STMicroelectronics is a key player in the global semiconductor industry, contributing to advancements in technology and enabling smart and efficient solutions across multiple applications.

Application

The IKD06N60R is a power MOSFET used in various applications, including power supply circuits, motor control, and automotive systems. It is suitable for switching and amplification in high-voltage environments due to its high breakdown voltage and low on-resistance. Common uses include DC-DC converters, inverters, and energy-efficient electronic devices.

Equivalent

The IKD06N60R is an IGBT (Insulated Gate Bipolar Transistor) with specific ratings. Equivalent products may include:
1. IRG6PC40KD - 600V, 6A IGBT
2. FGA25N60 - 600V, 25A IGBT
3. STGW30NC60 - 600V, 30A IGBT
Always check the datasheets for exact specifications and compatibility to ensure interchangeability.

Expédition

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Référence des frais d'expédition (DHL/FedEx):

DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

Paiements

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