IKB40N65EH5

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IKB40N65EH5

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Spécifications

Brand Infineon Technologies
Product Type IGBT Transistors
Subcategory IGBTs
Packaging Reel
Maximum Gate Emitter Voltage - 20 V, 20 V

Vue d'ensemble

Description

The IKB40N65EH5 is a high-voltage N-channel MOSFET designed for power applications, specifically in the 650V range. It is part of Infineon's EcoFET series, offering low on-resistance, fast switching capabilities, and improved thermal performance. The device is commonly used in various applications, including power supplies, motor drives, and inverters for renewable energy systems.
Key features of the IKB40N65EH5 include:
- Maximum Drain-Source Voltage (VDS): 650V, suitable for high-voltage applications.
- Continuous Drain Current (ID): 40A, allowing it to handle substantial loads.
- Low RDS(on): This minimizes conduction losses, enhancing efficiency.
- Fast Switching Speed: Reduces switching losses, making it ideal for high-frequency applications.
The IKB40N65EH5 is packaged in a TO-247 configuration, which facilitates effective heat dissipation. Its robustness and efficiency make it a popular choice among engineers for designing reliable and energy-efficient power electronic systems.

Features

The IKB40N65EH5 is an N-channel MOSFET designed for high-voltage applications. Key features include:
1. Voltage Rating: It operates at a maximum drain-source voltage (Vds) of 650V.
2. Current Rating: The continuous drain current (Id) is rated at 40A, suitable for high-current applications.
3. RDS(on): It typically has a low on-resistance, enhancing efficiency by minimizing power loss during operation.
4. Gate Threshold Voltage: The gate-source threshold voltage (Vgs(th)) allows for easy driving with standard gate voltages.
5. Fast Switching: Designed for high-speed switching applications, it reduces switching losses significantly.
6. Thermal Performance: It features a high maximum junction temperature, improving reliability in demanding environments.
7. Package Type: Typically available in TO-220 or similar packages, which support effective heat dissipation.
These features make the IKB40N65EH5 suitable for use in power supplies, converters, and motor control applications.

Package

The IKB40N65EH5 is typically packaged in a TO-247 format, which is a robust package suitable for high-power applications, providing efficient thermal management and ease of mounting on heatsinks.

Pinout

The IKB40N65EH5 is an N-channel power MOSFET with a total of 3 pins. The pin configuration and their functions are as follows:
1. Gate (G): This pin is used to control the MOSFET. Voltage applied to the gate determines whether the device is in the ON or OFF state.

2. Drain (D): The drain pin is where the load current flows into the MOSFET when it is turned ON.
3. Source (S): The source pin is the point where the current exits the MOSFET.
This MOSFET is designed for high voltage applications, capable of handling up to 650V with a continuous drain current rating of 40A, making it suitable for use in power supply circuits, motor drives, and other applications requiring efficient switching.

Manufacturer

The IKB40N65EH5 is manufactured by Infineon Technologies AG, a global semiconductor manufacturer headquartered in Neubiberg, Germany. Infineon specializes in developing a wide range of semiconductor solutions, including power semiconductors, microcontrollers, and sensors, catering to various sectors such as automotive, industrial, and consumer electronics. The company is known for its focus on innovation and technology, particularly in areas like energy efficiency and connectivity. Infineon is a key player in the semiconductor industry, contributing to advancements in electronics and smart technologies.

Application

The IKB40N65EH5 is an N-channel MOSFET typically used in applications such as power supplies, motor drives, and inverters. It's suitable for high-voltage and high-current switching applications, including industrial automation, renewable energy systems, and electric vehicles. Its fast switching capabilities and thermal performance make it ideal for efficient power management in various electronic devices.

Equivalent

The IKB40N65EH5 is a 650V N-channel MOSFET. Equivalent products include the Infineon IRF840, STMicroelectronics STP40NF65, and ON Semiconductor NTD40N65. Always check datasheets for specific parameters like Rds(on), current rating, and packaging to ensure compatibility for your application.

Expédition

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Référence des frais d'expédition (DHL/FedEx):

DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

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