IHW50N65R5

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IHW50N65R5

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Spécifications

Brand Infineon Technologies
Product Type IGBT Transistors
Subcategory IGBTs
Packaging Tube
Maximum Gate Emitter Voltage - 20 V, 20 V
Technology Si
Minimum Operating Temperature - 40 C
Maximum Operating Temperature + 175 C
Factory Pack Quantity:Factory Pack Quantity 240
Package / Case TO-247-3
Mounting Style Through Hole
Configuration Single
Collector- Emitter Voltage VCEO Max 650 V
Collector-Emitter Saturation Voltage 1.35 V
Continuous Collector Current at 25 C 80 A
Pd - Power Dissipation 282 W
Series TRENCHSTOP 5 RC-H
Gate-Emitter Leakage Current 100 nA
Operating Temperature Range - 40 C to + 175 C
Tradename TRENCHSTOP
Part # Aliases SP001133104 IHW50N65R5XKSA1
Unit Weight 1.340411 oz

Vue d'ensemble

Description

The IHW50N65R5 is a high-voltage, N-channel IGBT (Insulated Gate Bipolar Transistor) designed for power applications. It features a 650V maximum voltage rating and a continuous current capacity of 50A, making it suitable for various industrial applications, including motor drives, inverters, and power supplies.
This IGBT is characterized by its low on-state voltage drop and high switching speed, which enhance efficiency and reduce heat generation during operation. It also incorporates advanced gate drive characteristics, allowing for easy integration into existing power circuits.
The device is part of a family that offers robustness and reliability, with applications in renewable energy systems, traction drives, and industrial automation. Its packaging typically ensures good thermal management, which is critical for maintaining performance in demanding conditions.
Overall, the IHW50N65R5 is an ideal choice for engineers seeking efficient and reliable solutions for high-power applications.

Features

The IHW50N65R5 is an N-channel power MOSFET designed for high-efficiency applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (Vds) of 650V, making it suitable for high-voltage applications.
2. Current Rating: The device can handle a continuous drain current (Id) of up to 50A, providing robust performance in power management.
3. RDS(on): It boasts a low on-resistance (RDS(on)) of around 0.15 ohms, which minimizes conduction losses and improves efficiency.
4. Fast Switching: The IHW50N65R5 offers fast switching times, making it ideal for applications like switch-mode power supplies (SMPS) and inverters.
5. Thermal Performance: With a maximum junction temperature of 175°C, it supports high-temperature operations, enhancing reliability in demanding environments.
6. Package Type: Available in TO-220 package, it allows for easy heat dissipation.
Overall, the IHW50N65R5 is suitable for applications requiring efficient power handling and high voltage capabilities.

Package

The IHW50N65R5 is typically available in an TO-247 package type, which is a standardized package used for high-power devices, providing effective heat dissipation and ease of mounting.

Pinout

The IHW50N65R5 is an N-channel MOSFET typically used for power applications. It has a TO-220 package, which features three pins. The pinout and functions are as follows:
1. Gate (G): This pin controls the switching of the MOSFET. A voltage applied here allows current to flow from the drain to the source.

2. Drain (D): This is the terminal through which the main current flows when the MOSFET is turned on.
3. Source (S): This pin serves as the return path for the current flowing through the drain.
This MOSFET is characterized by a high voltage rating (650V) and a maximum continuous drain current of 50A, making it suitable for high-voltage applications, such as inverters and power supplies.

Manufacturer

The IHW50N65R5 is manufactured by Infineon Technologies AG. Infineon is a semiconductor manufacturer based in Germany, specializing in a wide range of products such as microcontrollers, power semiconductors, sensors, and automotive electronics. The company focuses on innovation in the fields of energy efficiency, mobility, and security solutions. Infineon serves various markets, including automotive, industrial, and consumer electronics, and is known for its high-performance products that cater to the increasing demand for smart and sustainable technologies.

Application

The IHW50N65R5 is an N-channel IGBT (Insulated Gate Bipolar Transistor) primarily used in high-power applications such as industrial motor drives, renewable energy systems (like solar inverters), and power supplies. It is suitable for switching applications in welding equipment, induction heating, and traction drives. Additionally, its low conduction and switching losses make it ideal for energy-efficient designs in various power electronics systems.

Equivalent

The IHW50N65R5 is an IGBT (Insulated Gate Bipolar Transistor) from Infineon. Equivalent products include:
1. FGA50N65 - Fairchild Semiconductor
2. IRG4BC30KD - Infineon
3. MG50J6ES - Mitsubishi Electric
4. B50N65 - STMicroelectronics
Always verify the specifications (voltage, current ratings, and switching characteristics) for compatibility in your specific application.

Expédition

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Référence des frais d'expédition (DHL/FedEx):

DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

Paiements

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