IHW30N160R5

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IHW30N160R5

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Vue d'ensemble

Description

The IHW30N160R5 is a high-performance insulated gate bipolar transistor (IGBT) designed for efficient power conversion in various applications, including industrial drives, renewable energy systems, and motor control. With a voltage rating of 1600V and a current rating of 30A, this device offers high efficiency and fast switching capabilities, making it suitable for high-frequency applications.
The IHW30N160R5 features a low on-state voltage drop, which minimizes power losses during operation, and includes a built-in diode for reverse recovery. Its robust design ensures reliability in demanding environments. Additionally, the device is housed in a TO-247 package, allowing for effective thermal management and easy integration into power electronics systems.
Overall, the IHW30N160R5 is an ideal choice for engineers looking for a reliable, high-performance IGBT to enhance the efficiency and performance of their power conversion applications.

Features

The IHW30N160R5 is an N-channel power MOSFET designed for high-voltage applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_ds) of 160V, making it suitable for high-voltage power circuits.
2. Current Rating: The device can handle continuous drain current (I_d) up to 30A, allowing it to drive significant loads.
3. Low R_DS(on): It has a low on-resistance (R_DS(on)), which reduces power losses and improves efficiency during operation.
4. Fast Switching: The MOSFET is designed for fast switching speeds, enhancing its performance in high-frequency applications.
5. Thermal Performance: It features a robust thermal design, which aids in managing heat dissipation effectively.
6. Package Type: Typically offered in a standard TO-220 or similar package, facilitating easy mounting and thermal management.
These features make the IHW30N160R5 ideal for use in power supplies, motor drives, and other high-efficiency applications requiring reliable switching performance.

Package

The IHW30N160R5 is typically packaged in a TO-247 form factor, which is a three-terminal package designed for high-power applications. This makes it suitable for efficient heat dissipation and ease of mounting in various electronic circuits.

Pinout

The IHW30N160R5 is an N-channel MOSFET produced by Infineon Technologies, designed for high-voltage applications. It typically comes in a TO-247 package, which has three pins.
Pin Count and Functions:
1. Gate (G): This pin is used to control the MOSFET. A voltage applied to this pin turns the MOSFET on or off.
2. Drain (D): This is the terminal through which the load current flows when the device is in the on state. It connects to the high-voltage side of the circuit.
3. Source (S): This pin connects to the ground or the low-voltage side of the circuit. It serves as the return path for the drain current.
The IHW30N160R5 is rated for a maximum drain-source voltage (V_DS) of 1600V and can handle continuous currents up to 30A, making it suitable for various applications such as power converters, motor drives, and industrial equipment.

Manufacturer

The IHW30N160R5 is manufactured by Infineon Technologies AG. Infineon is a leading global semiconductor manufacturer headquartered in Neubiberg, Germany. The company specializes in semiconductor solutions for various applications, including automotive, industrial power control, and security technologies. Infineon focuses on energy efficiency, mobility, and security, serving a diverse range of markets such as automotive electronics, communication, and consumer electronics. With a strong emphasis on innovation and sustainability, Infineon plays a crucial role in advancing technologies that promote a smarter and more efficient world.

Application

The IHW30N160R5 is a high-voltage IGBT (Insulated Gate Bipolar Transistor) primarily used in industrial applications such as motor drives, inverters, and power converters. Its features make it suitable for renewable energy systems like solar inverters, as well as in traction drives for electric vehicles and rail systems. Additionally, it's used in high-power switching applications, including UPS systems and induction heating.

Equivalent

The IHW30N160R5 is an IGBT (Insulated Gate Bipolar Transistor) used in power electronics. Equivalent products include:
1. IRG4BC30KD - Infineon
2. FGA30N160 - ON Semiconductor
3. HGTG30N60 - Honeywell
4. MG150Q2YS12 - Mitsubishi
Always verify specifications such as voltage, current ratings, and switching characteristics for compatibility in your application.

Expédition

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Référence des frais d'expédition (DHL/FedEx):

DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

Paiements

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