IHW30N135R5

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IHW30N135R5

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Vue d'ensemble

Description

The IHW30N135R5 is a high-performance MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by Infineon Technologies. It is designed to handle high voltage and high current applications, making it suitable for use in power electronics, including inverters, converters, and industrial drives.
Key specifications include a maximum drain-source voltage (V_DS) of 135V and a continuous drain current (I_D) of 30A, which allows it to operate efficiently in demanding environments. The device features a low on-resistance (R_DS(on)), which minimizes power losses during operation. Its fast switching capabilities make it ideal for applications requiring rapid response times.
The IHW30N135R5 is typically used in automotive, renewable energy, and industrial applications, where reliability and efficiency are crucial. It also comes in a TO-247 package, facilitating easy integration into various circuits. Overall, this MOSFET is a robust choice for engineers seeking high efficiency and performance in their designs.

Features

The IHW30N135R5 is an N-channel MOSFET designed for high-performance applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 135V, making it suitable for high-voltage applications.
2. Current Rating: The device can handle a continuous drain current (I_D) of up to 30A, allowing it to manage significant power loads.
3. Low On-Resistance: It boasts a low R_DS(on) value, which minimizes conduction losses and improves efficiency in power conversion applications.
4. Fast Switching: The MOSFET is designed for fast switching speeds, enhancing the performance in applications like converters and inverters.
5. Thermal Performance: It has a good thermal resistance (RθJA), which helps in managing heat dissipation effectively during operation.
6. Packaging: Typically available in TO-220 or similar packages, facilitating easy heat sinking and mounting.
These features make the IHW30N135R5 suitable for use in power supplies, motor drives, and other demanding electronic circuits.

Package

The IHW30N135R5 is typically packaged in a TO-247 format. This package type is known for its ability to handle high power and provides good thermal performance, making it suitable for applications requiring efficient heat dissipation.

Pinout

The IHW30N135R5 is an N-channel power MOSFET from Infineon Technologies. It features a total of 3 pins. The pin configuration is as follows:
1. Gate (G): Controls the MOSFET operation, allowing or blocking current flow between the drain and source.
2. Drain (D): The terminal through which the current flows out when the MOSFET is in the 'on' state.
3. Source (S): The terminal through which the current enters the MOSFET when it is conducting.
This power MOSFET is designed for applications that require high efficiency and fast switching capabilities, making it suitable for use in power supplies, motor drives, and various other electronic circuits. It operates with a maximum voltage rating of 1350V and a continuous drain current rating of 30A, enabling it to handle significant power loads.

Manufacturer

The IHW30N135R5 is manufactured by Infineon Technologies AG, a leading global semiconductor manufacturer based in Germany. Infineon specializes in designing and producing a wide range of semiconductor solutions, including power semiconductors, microcontrollers, and sensors. Their products are widely used across various industries, including automotive, industrial, and consumer electronics, focusing on enhancing energy efficiency and enabling smart technologies. Infineon is known for its innovation and commitment to sustainability, providing advanced solutions for energy management and automation.

Application

The IHW30N135R5 is an IGBT (Insulated Gate Bipolar Transistor) used in various high-power applications, including industrial drives, renewable energy systems (like solar inverters), motor control, and power supplies. Its high voltage and current ratings make it suitable for applications requiring efficient switching and control in environments with high temperatures and demanding loads.

Equivalent

The IHW30N135R5 is an IGBT (Insulated Gate Bipolar Transistor) used in power applications. Equivalent products include the Infineon IGBT series such as IHW30N135 and similar models from other manufacturers like ON Semiconductor (e.g., MBRF30H120) or STMicroelectronics (e.g., STGW30H120). Always check the datasheets for specifications like voltage, current ratings, and switching speed to ensure compatibility.

Expédition

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Référence des frais d'expédition (DHL/FedEx):

DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

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