IHW30N135R3

The IHW30N135R3 is a high-power, high-voltage IGBT (Insulated Gate Bipolar Transistor) designed for various applications in the field of power electronics. This device is notable for its efficiency, making it suitable for use in inverters, converters, and motor drives. It features a collector-emitter voltage rating of 1350V and a continuous collector current rating of 30A, allowing it to handle substantial power loads while maintaining thermal stability.
The device operates at high switching frequencies, enhancing the overall performance of power circuits. Its rugged construction ensures reliability in demanding environments, and it is often utilized in industrial applications, renewable energy systems, and electric vehicles. The IHW30N135R3's ability to minimize switching losses and enhance thermal management makes it a preferred choice among engineers and designers for efficient power handling and control.
Overall, the IHW30N135R3 combines high performance, reliability, and efficiency, making it a key component in modern power electronics.

The IHW30N135R3 is an N-channel MOSFET designed for high-performance applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (VDS) of 135V, making it suitable for high-voltage applications.

2. Current Rating: The device can handle a continuous drain current (ID) of up to 30A, allowing it to manage substantial power loads.
3. On-Resistance (RDS(on)): It boasts a low on-resistance, typically around 0.43 ohms at 10V gate drive, which minimizes power losses and improves efficiency.
4. Gate Threshold Voltage: The gate threshold voltage (VGS(th)) ranges from 2V to 4V, enabling compatibility with various gate drive levels.
5. Thermal Characteristics: The IHW30N135R3 features a robust thermal design, with a maximum junction temperature of 175°C, ensuring reliability in demanding environments.
6. TO-220 Package: Its package type allows for effective heat dissipation and easy mounting in various circuit configurations.
This MOSFET is ideally suited for applications such as power management, inverters, and switching power supplies.

The IHW30N135R3 is typically packaged in a TO-247 format, which is a type of power semiconductor package designed for high-power applications. This package allows efficient heat dissipation and easy mounting on heat sinks.

The IHW30N135R3 is an N-channel MOSFET from Infineon, designed for power applications. It features a pin count of 4. The typical pin configuration is as follows:
1. Gate (G): This pin controls the MOSFET and is used to turn it on or off by applying a voltage.
2. Drain (D): This pin is where the load current flows out of the device when it is conducting.
3. Source (S): This pin is connected to the ground or negative terminal of the power supply, completing the circuit.
4. Tab (T): Often connected to the source in package designs for thermal management, allowing for heat dissipation.
The IHW30N135R3 is specifically designed for high-voltage applications, with a maximum drain-source voltage (V_DS) of 135V and can handle a continuous drain current (I_D) of 30A. Its low on-resistance (R_DS(on)) improves efficiency in power conversion systems.

The IHW30N135R3 is manufactured by Infineon Technologies AG, a leading global semiconductor manufacturer. Infineon specializes in providing semiconductor solutions for various applications, including automotive, industrial, and communication. The company is known for its expertise in power semiconductors, microcontrollers, and sensors. Infineon focuses on innovation in efficiency and performance, contributing to advancements in energy management and automation. Headquartered in Neubiberg, Germany, Infineon operates worldwide, serving a diverse range of industries with high-quality semiconductor products and solutions.

The IHW30N135R3 is an N-channel IGBT (Insulated Gate Bipolar Transistor) used in various applications, including motor drives, renewable energy systems (such as solar inverters), industrial power supplies, and traction systems in electric vehicles. Its high voltage and current ratings make it suitable for power conversion and control in high-efficiency systems.

The IHW30N135R3 is an IGBT (Insulated Gate Bipolar Transistor) from Infineon. Equivalent products include:
1. FGA25N120 (Fairchild)
2. MG150Q2YS40 (Mitsubishi)
3. MIGB25N120 (Mitsubishi)
4. IRG4PH50KD (Infineon)
Always verify specifications such as voltage, current ratings, and switching characteristics for compatibility before substitution.