IFCM30T65GD

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IFCM30T65GD

IGBT Modules CIPOS MINI

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Vue d'ensemble

Description

The IFCM30T65GD is a high-voltage, N-channel MOSFET designed for efficient switching applications in power electronics. With a voltage rating of 650V and a continuous drain current of up to 30A, it is suitable for various applications, including power supplies, motor controls, and inverters. This MOSFET features low on-resistance (R_ds(on)), which minimizes conduction losses and enhances overall efficiency. Additionally, it offers fast switching speeds, making it ideal for high-frequency operations. The device is packaged in a TO-247 format, ensuring effective thermal management. Its robust design and performance characteristics make it a popular choice for engineers seeking reliable components for demanding power applications.

Features

The IFCM30T65GD is a silicon carbide (SiC) MOSFET designed for high-performance applications. Key features include:
1. Voltage Rating: It typically supports a high voltage rating, often around 650V, making it suitable for power applications.

2. Current Rating: Capable of handling significant current levels, typically up to 30A, facilitating efficient power management.
3. Low On-Resistance: It offers low RDS(on) values, leading to reduced conduction losses and improved thermal performance.
4. High Switching Speed: The device features fast switching capabilities, enhancing efficiency in high-frequency applications.
5. Thermal Stability: With excellent thermal conductivity, it operates effectively across a wide temperature range.
6. Applications: Commonly used in power supplies, electric vehicles, renewable energy systems, and industrial motor drives.
7. Package: Often available in compact packages like TO-247 or DPAK, providing ease of integration into various designs.
These features make the IFCM30T65GD suitable for demanding applications requiring efficiency and reliability.

Package

The IFCM30T65GD is typically packaged in a TO-247 format. This package type is designed for high-power applications, providing efficient thermal management and robust performance.

Pinout

The IFCM30T65GD is a 650V, 30A IGBT (Insulated Gate Bipolar Transistor) module. It typically features a 6-pin configuration. The pin functions are as follows:
1. Collector (C): Pin for connecting to the load.
2. Emitter (E): Common ground for the circuit.
3. Gate (G): Control pin used to turn the IGBT on and off.
4. Gate (G): Another gate pin often used for better thermal management or for gate drive configurations.
5. Collector (C): Additional collector pin for parallel connections.
6. Emitter (E): Additional emitter pin for parallel connections.
This structure allows for improved heat dissipation and flexibility in circuit design. The IFCM30T65GD is suitable for various applications, including motor drives, inverters, and power supplies.

Manufacturer

The IFCM30T65GD is manufactured by Infineon Technologies AG, a German semiconductor manufacturer. Established in 1999, Infineon specializes in developing a wide range of semiconductor and system solutions, focusing on applications in automotive, industrial power control, and digital security. The company plays a significant role in the global market for power semiconductors and is known for its innovations in energy efficiency and advanced semiconductor technologies. Infineon operates worldwide, providing components for various sectors, including automotive, consumer electronics, and telecommunications.

Application

The IFCM30T65GD is a 650V IGBT (Insulated Gate Bipolar Transistor) primarily used in industrial applications such as motor drives, inverters, and power supplies. Its features make it suitable for renewable energy systems, such as solar inverters and wind turbine converters, as well as in traction systems and high-power switching applications. Additionally, it can be utilized in HVAC systems and induction heating equipment.

Equivalent

The IFCM30T65GD is a 650V IGBT (Insulated Gate Bipolar Transistor). Equivalent products include:
1. IRG4BC30KD - International Rectifier
2. FGA30N65 - Fairchild Semiconductor
3. MGF30N65H3 - ON Semiconductor
4. B140X-65 - Infineon Technologies
Check datasheets for specific characteristics and ensure compatibility with your application.

Expédition

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Référence des frais d'expédition (DHL/FedEx):

DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

Paiements

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