IDWD30G120C5

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IDWD30G120C5

SiC Schottky Diodes SIC DISCRETE

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Vue d'ensemble

Description

The IDWD30G120C5 is a high-performance power MOSFET (metal-oxide-semiconductor field-effect transistor) designed for use in various applications, particularly in power management and conversion systems. It features a maximum drain-source voltage of 1200V and a continuous drain current rating of 30A, making it suitable for high-voltage applications.
Key characteristics include low on-resistance, which improves efficiency and reduces heat generation during operation. This MOSFET is typically utilized in switch-mode power supplies, inverters, and motor drives, where efficient power handling is crucial.
The device is housed in a TO-247 package, allowing for effective thermal management, which is essential for high-power applications. Additionally, it is designed for fast switching speeds, contributing to better overall system performance.
Overall, the IDWD30G120C5 is ideal for engineers looking for reliable and efficient components in high-voltage power electronics designs.

Features

The IDWD30G120C5 is a high-performance power semiconductor device, specifically a 1200V, 30A insulated gate bipolar transistor (IGBT) module. Key features include:
1. Voltage Rating: Operates at a maximum voltage of 1200V, suitable for high-voltage applications.
2. Current Rating: Capable of handling continuous current up to 30A, making it ideal for medium-power applications.
3. Low Switching Loss: It offers low conduction and switching losses, enhancing efficiency in power conversion.
4. Fast Switching Speed: Facilitates high-frequency operation, beneficial for applications requiring rapid switching.
5. Thermal Performance: Designed for efficient heat dissipation, supporting reliable performance in demanding conditions.
6. Applications: Commonly used in motor drives, power inverters, and renewable energy systems.
These features make the IDWD30G120C5 suitable for various industrial applications, including renewable energy, automotive systems, and industrial automation.

Package

The IDWD30G120C5 is a semiconductor device typically packaged in a DPAK (also known as TO-252) format. This surface-mount package is designed for ease of thermal management and efficient space utilization in electronic circuits.

Pinout

The IDWD30G120C5 is an IGBT (Insulated Gate Bipolar Transistor) module designed for high-voltage applications. It typically features a pin count of 6. The functions of these pins include:
1. Gate (G): Controls the switching of the IGBT.
2. Collector (C): Connects to the high voltage supply or load.
3. Emitter (E): Connects to the ground or negative side of the circuit.
4. Collector (C): Another collector pin for parallel configurations.
5. Emitter (E): Another emitter pin for parallel configurations.
6. Thermal Pad (T): Provides thermal management and helps dissipate heat.
Always refer to the specific datasheet for detailed pin configuration and electrical characteristics, as the exact pinout can vary between manufacturers.

Manufacturer

The IDWD30G120C5 is manufactured by IDW (Integrated Device Technology, Inc.), which is a subsidiary of Renesas Electronics Corporation. IDW focuses on high-performance mixed-signal solutions, primarily serving the automotive, industrial, and consumer electronics markets. The company specializes in technologies related to data processing, connectivity, and power management. Renesas, as a parent company, is a leading global semiconductor manufacturer known for its microcontrollers, analog, power, and system-on-chip (SoC) solutions.

Application

The IDWD30G120C5 is a 1200V, 30A silicon carbide (SiC) MOSFET used primarily in high-efficiency power conversion applications. Its application areas include electric vehicles, industrial motor drives, renewable energy systems (like solar inverters), and power supplies for data centers. The device offers benefits like reduced switching losses and improved thermal performance, making it suitable for demanding high-frequency and high-temperature environments.

Equivalent

The IDWD30G120C5 chip is a 1200V, 30A IGBT (Insulated Gate Bipolar Transistor). Equivalent products include:
1. VUO30-120N4 (Vishay)
2. MG120J6ES12 (Mitsubishi)
3. FGH40N120 (ON Semiconductor)
4. IKW30N120T (Infineon)
Always verify the specific application requirements and specifications before substituting components.

Expédition

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Référence des frais d'expédition (DHL/FedEx):

DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

Paiements

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