IDH10SG60C

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IDH10SG60C

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Spécifications

Brand Infineon Technologies
Subcategory Diodes & Rectifiers
Shipping Restrictions Mouser does not presently sell this product in your region.
Package / Case TO-220-2
Product Type SiC Schottky Diodes
Series IDH10SG60
Factory Pack Quantity:Factory Pack Quantity 500
Product Schottky Silicon Carbide Diodes
Mounting Style Through Hole
If - Forward Current 10 A
Type Schottky Diode
Configuration Single
Vf - Forward Voltage 2.1 V
Ir - Reverse Current 90 uA
Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 175 C
Packaging Tube
Unit Weight 0.211644 oz
Technology SiC
Vrrm - Repetitive Reverse Voltage 600 V
Ifsm - Forward Surge Current 51 A
Part # Aliases SP000607040 IDH1SG6CXK IDH10SG60CXKSA1

Vue d'ensemble

Description

The IDH10SG60C is a high-performance, 600V N-channel insulated gate bipolar transistor (IGBT) designed for various power electronics applications, including inverters, converters, and motor drives. It combines the advantages of both MOSFETs and bipolar transistors, offering high efficiency and fast switching capabilities, which are essential for reducing energy losses and improving thermal management.
With a maximum continuous collector current rating, the IDH10SG60C is suited for medium to high power applications. Its low saturation voltage and high breakdown voltage enhance reliability under demanding conditions. The device typically features a robust thermal design, allowing it to operate effectively in challenging environments.
The IDH10SG60C's compact package minimizes space in electronic designs, making it ideal for applications where size and efficiency are critical. Overall, this IGBT is an excellent choice for engineers looking to optimize power performance in their electronic systems.

Features

The IDH10SG60C is a high-voltage IGBT (Insulated Gate Bipolar Transistor) designed for efficient switching applications. Key features include:
1. Voltage Rating: 600V, suitable for various power applications.
2. Current Rating: 10A continuous collector current, providing robust performance in demanding environments.
3. Low On-State Voltage: Ensures lower conduction losses, enhancing overall efficiency.
4. Fast Switching Speed: Optimized for high-frequency applications, improving system performance.
5. Thermal Stability: Designed to operate effectively in high-temperature environments, with good thermal management characteristics.
6. Integrated Anti-Parallel Diode: Offers improved reverse recovery characteristics for better performance in inverter and converter circuits.
7. Package Type: Available in a TO-220 package, facilitating easy heat dissipation and mounting.
These attributes make the IDH10SG60C suitable for use in applications such as motor drives, power supplies, and renewable energy systems.

Package

The IDH10SG60C is typically available in a TO-220 package type, which is a standard package for high-power transistors and MOSFETs, offering good thermal performance and ease of mounting.

Pinout

The IDH10SG60C is an integrated circuit (IC) designed for intelligent gate drive applications. It typically features a pin count of 10. The primary functions of the IDH10SG60C include driving silicon carbide (SiC) or gallium nitride (GaN) transistors, offering high efficiency and fast switching capabilities.
Key pins on the device include:
1. VDD: Supply voltage for the driver.
2. GND: Ground reference.
3. IN: Signal input to control the gate drive.
4. VGS: Gate-source voltage control.
5. COM: Common connection for gate drive.
6. VS: Source voltage for the high-side driver.
7. BOOT: Bootstrap capacitor connection for high-side driving.
8. TSD: Thermal shutdown pin.
9. NC: No connection (not used).
10. FAULT: Fault indication output.
The device is optimized for applications such as power conversion, motor drives, and renewable energy systems.

Manufacturer

The IDH10SG60C is manufactured by Infineon Technologies AG, a global semiconductor manufacturer headquartered in Neubiberg, Germany. Infineon specializes in providing a wide range of semiconductor and system solutions, focusing on automotive, industrial power control, and security technologies. The company is known for its innovations in power semiconductors, microcontrollers, and sensors, catering to various sectors including automotive, industrial automation, and consumer electronics. Infineon emphasizes sustainability and energy efficiency in its products, aligning with the growing demand for green technology solutions in the semiconductor industry.

Application

The IDH10SG60C is an IGBT (Insulated Gate Bipolar Transistor) designed for high-performance applications in power electronics. It is commonly used in areas such as motor drives, induction heating, power inverters for renewable energy systems, uninterruptible power supplies (UPS), and industrial automation. Its high voltage and current capabilities make it suitable for switching applications where efficiency and thermal performance are critical.

Equivalent

The IDH10SG60C is an IGBT (Insulated Gate Bipolar Transistor) with a voltage rating of 600V and a current rating of 10A. Equivalent products include the IRG4PH60KD, STGW40H60, and FGH60N60SMD. Always verify specifications such as voltage, current, and switching characteristics before substitution.

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FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

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