HYG011N04LS1C2

Les images sont à titre de référence seulement

HYG011N04LS1C2

100% original & Nouveau

24 heures prêtes à expédier

Garantie 365 jours

RFQ et Obtenez plus de rabais

Spécifications

Manufacturer HUAYI
Package DFN-8(5.2x5.9)
Operating Temperature -55℃~+175℃
Current - Continuous Drain(Id) 165A
Pd - Power Dissipation 75W
Drain to Source Voltage 40V
RDS(on) 1.1mΩ@10V,40A
Gate Threshold Voltage (Vgs(th)@Id) 1V
Type 1 N-channel
Gate Charge(Qg) 89nC@10V
Input Capacitance(Ciss@Vds) 5876pF
Reverse Transfer Capacitance (Crss@Vds) 58pF@25V

Vue d'ensemble

Description

HYG011N04LS1C2 is a high-performance N-channel MOSFET (metal-oxide-semiconductor field-effect transistor) designed for power management applications. It features low on-resistance, enabling efficient power conversion and management, which is crucial in various electronic devices. This MOSFET is typically used in applications such as power supplies, DC-DC converters, and motor control circuits. Its enhanced thermal performance and fast switching capabilities make it suitable for high-frequency operations and helps in minimizing energy loss. The package design allows for effective heat dissipation, which is essential for maintaining reliability and performance in demanding environments. Overall, HYG011N04LS1C2 is a key component for engineers looking to optimize circuit designs for efficiency and reliability in power electronics.

Features

The HYG011N04LS1C2 is a N-channel MOSFET designed for high-efficiency switching applications. Key features include:
1. Voltage Rating: It has a high drain-source voltage (Vds) rating, typically around 40V, allowing for versatile applications.
2. Low On-Resistance: With a low Rds(on), it minimizes conduction losses, enhancing overall efficiency in power circuits.
3. High Current Handling: It supports substantial continuous drain current, making it suitable for demanding applications.
4. Fast Switching Speed: The device is optimized for quick switching, which is critical for applications like DC-DC converters and motor drivers.
5. Thermal Performance: It offers good thermal stability, with appropriate thermal resistance characteristics to handle heat dissipation effectively.
6. Package Type: Usually available in compact packages (e.g., TO-220), facilitating easy integration into various designs.
Overall, the HYG011N04LS1C2 is suitable for power management in consumer electronics, automotive, and industrial applications.

Package

The HYG011N04LS1C2 is packaged in a DPAK (TO-252) form factor. This package type is designed for efficient thermal management and is suitable for surface-mount applications.

Pinout

The HYG011N04LS1C2 is a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) produced by Hynix Semiconductor. It typically features a 5-pin configuration. The pin functions are as follows:
1. Gate (G): Controls the switching of the MOSFET.
2. Drain (D): The terminal through which the current exits the device when it is on.
3. Source (S): The terminal through which the current enters the device.
4. Body (B): Often internally connected to the Source; it can be used for body diode conduction.
5. Drain to Source Voltage (V_DS): This is not a pin but a specification indicating the maximum voltage the device can handle between the Drain and Source terminals.
This device is typically used in power management applications, offering low on-resistance and fast switching capabilities. Always refer to the manufacturer's datasheet for specific pin configuration and electrical characteristics.

Manufacturer

The HYG011N04LS1C2 is manufactured by Infineon Technologies AG, a German semiconductor manufacturer. Infineon specializes in developing a wide range of semiconductor solutions, including power management, automotive electronics, and security technologies. Founded in 1999, the company is known for its innovations in power semiconductors, microcontrollers, and sensors, serving various industries such as automotive, industrial, and consumer electronics. Infineon is recognized for its commitment to sustainability and energy efficiency in its product offerings.

Application

HYG011N04LS1C2 is a N-channel MOSFET primarily used in applications such as power management, DC-DC converters, motor drivers, and high-efficiency switching power supplies. Its low on-resistance and high-speed switching capabilities make it suitable for consumer electronics, renewable energy systems, and automotive applications, particularly in electric vehicles and battery management systems.

Equivalent

The HYG011N04LS1C2 is a N-channel MOSFET. Equivalent products include the STP11NK60Z, IRF540N, and BSS123, depending on the specific requirements like voltage and current ratings. Always check the datasheets for exact specifications to ensure compatibility.

Expédition

Méthodes d'expéditionNous

offrir des services d'expédition mondiaux par DHL, FedEx, TNT, UPS ou tout autre expéditeur de votre choix.


Référence des frais d'expédition (DHL/FedEx):

DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

Paiements

Payment Methods

Le terme de paiement est 100% prépayé.

Actuellement, nous n'acceptons que les méthodes de paiement ci-dessous:

1. PayPal

2. Carte de crédit/débit

3. Transfert bancaire

Similaire