HUF75645P3

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HUF75645P3

MOSFET N-CH 100V 75A TO220-3

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Spécifications

Series UltraFET™
Part Status Active
Base Product Number HUF75645
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 75A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 14mOhm @ 75A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 238 nC @ 20 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 3790 pF @ 25 V
Power Dissipation (Max) 310W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220-3
Package TO-220-3
Packaging Tube

Vue d'ensemble

Description

HUF75645P3 is a specific component or part number, typically referring to a high-frequency, low-noise transistor or semiconductor device manufactured by Hufschmid Electronics or a similar company. Such devices are commonly used in various electronic applications, including amplification, switching, and signal processing. The specifics of HUF75645P3, such as its electrical characteristics (e.g., voltage, current ratings, gain), packaging type, and intended applications, would be detailed in the manufacturer's datasheet. This information is crucial for engineers and technicians selecting components for circuit design and integration. For accurate and detailed specifications, it's recommended to consult the official documentation from the manufacturer.

Features

The HUF75645P3 is a high-performance power MOSFET designed for use in various applications, including power management and electronic switching. Key features include:
1. Voltage Rating: Typically, it can handle high voltage levels, making it suitable for demanding applications.
2. Current Rating: It supports substantial current levels, ensuring efficient operation in power applications.
3. Low On-Resistance: The device offers low RDS(on), which minimizes power loss and improves efficiency.
4. Fast Switching Speed: It is optimized for rapid switching, enhancing performance in high-frequency applications.
5. Thermal Performance: Designed with good thermal stability, it can effectively dissipate heat during operation.
6. Package Type: Available in various package types (like TO-220 or DPAK), it ensures ease of integration into different circuit designs.
Overall, the HUF75645P3 is suitable for applications in power supplies, converters, and motor drivers, offering reliability and efficiency in electronic systems.

Package

The HUF75645P3 is packaged in a TO-220 form factor. This package type is commonly used for power transistors and MOSFETs, providing effective heat dissipation and ease of mounting to heat sinks.

Pinout

The HUF75645P3 is a high-side N-channel MOSFET typically used in automotive applications, including power management and switching. It features a pin count of 8.
Pinout Functions:
1. Gate (G): Controls the MOSFET's switching.
2. Drain (D): Connects to the load; where the output current flows.
3. Source (S): Connected to ground or the system's return path.
4. R1: Often used for gate resistor or pull-down.
5. R2: Typically for gate charge or discharge path.
6. VDD: Supply voltage input for the driver circuit.
7. GND: Ground reference for the device.
8. NC (No Connection): Should not be connected; typically floating.
These connections allow the HUF75645P3 to effectively switch on and off, controlling power to various loads in automotive and industrial applications.

Manufacturer

The HUF75645P3 is manufactured by Huf Hulsbeck & Furst GmbH & Co. KG, commonly known as Huf Group. Founded in 1908 and headquartered in Düsseldorf, Germany, Huf Group specializes in automotive technology, primarily focusing on the development and production of locking systems, sensor systems, and keyless entry systems for vehicles. The company is a key player in the automotive supply industry, providing innovative solutions for vehicle manufacturers globally. Huf Group emphasizes research and development and is recognized for its commitment to quality and advanced technology in automotive security and access systems.

Application

The HUF75645P3 is a high-performance N-channel MOSFET primarily used in applications such as power management, DC-DC converters, motor drives, and battery management systems. Its low on-resistance and fast switching capabilities make it suitable for switching power supplies, load switching, and automotive applications, including electric vehicles and hybrid systems.

Equivalent

The HUF75645P3 is a power MOSFET commonly used in various applications. Equivalent products include:
1. IRF3205
2. FQP50N06
3. STP55NF06
4. BUK956R-100
5. SI7440
Always check specific parameters like voltage, current rating, and package type to ensure compatibility.

Expédition

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Référence des frais d'expédition (DHL/FedEx):

DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

Paiements

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