HGTG30N60A4

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HGTG30N60A4

IGBT 600V 75A TO-247-3

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  • Mfr. Partie #HGTG30N60A4
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Spécifications

Part Status Obsolete
Base Product Number HGTG30
Voltage - Collector Emitter Breakdown (Max) 600 V
Current - Collector (Ic) (Max) 75 A
Current - Collector Pulsed (Icm) 240 A
Vce(on) (Max) @ Vge, Ic 2.6V @ 15V, 30A
Power - Max 463 W
Switching Energy 280µJ (on), 240µJ (off)
Input Type Standard
Gate Charge 225 nC
Td (on/off) @ 25°C 25ns/150ns
Test Condition 390V, 30A, 3Ohm, 15V
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Package TO-247-3
Supplier Device Package TO-247-3
Packaging Tube

Vue d'ensemble

Description

The HGTG30N60A4 is a high-performance N-channel MOSFET designed for power applications. It operates at a maximum drain-source voltage of 600V and a continuous drain current of 30A, making it suitable for high-voltage and high-current applications. This MOSFET features low on-resistance (R_ds(on)) for improved efficiency and reduced power loss, which is critical in switching applications.
The device is typically used in power converters, inverters, and motor control circuits, among other applications. Its fast switching speed helps enhance the overall performance of the power electronics systems. The HGTG30N60A4 is packaged in a TO-220 format, allowing for effective heat dissipation and easy integration into circuits.
Overall, the HGTG30N60A4 is favored for its reliability, efficiency, and robust performance in demanding power environments.

Features

The HGTG30N60A4 is a high voltage N-channel MOSFET designed for power applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (Vds) of 600V, making it suitable for high-voltage applications.
2. Current Rating: The maximum continuous drain current (Id) is 30A.
3. Rds(on): Low on-state resistance (Rds(on)) of around 0.15 Ohms, ensuring reduced power losses and improved efficiency.
4. Gate Threshold Voltage: A gate threshold voltage (Vgs(th)) of 3-4V for enhanced switching performance.
5. Fast Switching: It exhibits fast switching speeds, making it ideal for high-frequency applications.
6. Thermal Resistance: Good thermal performance with a junction-to-case thermal resistance (Rθjc) that allows for effective heat dissipation.
7. Package: Available in a TO-247 package, which facilitates heat management.
These features make the HGTG30N60A4 suitable for applications such as power supplies, inverters, and motor drives.

Package

The HGTG30N60A4 is packaged in a TO-247 form factor. This package type is designed for high-power applications, offering efficient heat dissipation and robust performance.

Pinout

The HGTG30N60A4 is a high-voltage N-channel MOSFET manufactured by Infineon Technologies. It features a total of 3 pins.
Pin Configuration:
1. Gate (G): This pin is used to control the MOSFET. A voltage applied to this pin turns the device on or off.
2. Drain (D): The main terminal through which the load current flows when the device is on.
3. Source (S): The terminal connected to the ground or the lower potential in the circuit.
Functionality: The HGTG30N60A4 is designed for high-frequency applications, including switch-mode power supplies and motor control. It can handle a maximum drain-source voltage (V_DS) of 600V and a continuous drain current (I_D) of 30A, making it suitable for high-power applications. Its low on-resistance enhances efficiency during operation.

Manufacturer

The HGTG30N60A4 is manufactured by Infineon Technologies, a global semiconductor company based in Germany. Infineon specializes in providing a wide range of semiconductor solutions, including power semiconductors, microcontrollers, and sensors. The company focuses on various sectors such as automotive, industrial, and consumer electronics, emphasizing energy efficiency and reliability in their products. Infineon is known for its innovation in power management and has a strong presence in the global semiconductor market.

Application

The HGTG30N60A4 is a high-voltage, high-speed IGBT (Insulated Gate Bipolar Transistor) primarily used in applications such as motor drives, power inverters, induction heating, and renewable energy systems like solar inverters. Its features make it suitable for efficient power conversion and control in industrial machinery, consumer electronics, and electric vehicles.

Equivalent

The HGTG30N60A4 is a 600V, 30A IGBT (Insulated Gate Bipolar Transistor) commonly used in power applications. Equivalent products include:
1. HGTG30N60A3
2. FGA30N60
3. IRG30N60U
4. STGW30NC60
5. CMPT30N60
Always verify specifications for compatibility in specific applications.

Expédition

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Référence des frais d'expédition (DHL/FedEx):

DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

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