HFA50PA60C

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HFA50PA60C

DIODE ARRAY GP 600V 25A TO247AC

  • Fabricant
  • Mfr. Partie #HFA50PA60C
  • Paquet TO-247AC
  • Fiche de données
  • En stock7456

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Spécifications

Package Tube
Series HEXFRED®
ProductStatus Obsolete
DiodeConfiguration 1 Pair Common Cathode
DiodeType Standard
Voltage-DCReverse(Vr)(Max) 600 V
Current-AverageRectified(Io)(perDiode) 25A (DC)
Voltage-Forward(Vf)(Max)@If 1.7 V @ 25 A
Speed Fast Recovery =< 500ns, > 200mA (Io)
ReverseRecoveryTime(trr) 75 ns
Current-ReverseLeakage@Vr 20 µA @ 600 V
OperatingTemperature-Junction -55°C ~ 150°C
MountingType Through Hole
Package/Case TO-247-3

Vue d'ensemble

Description

The HFA50PA60C is a high-performance power amplifier designed for applications in RF and microwave communications. It operates within a frequency range of 50 MHz to 60 GHz and is known for its efficiency and linearity. This device typically features a combination of GaN (gallium nitride) or GaAs (gallium arsenide) technology, providing enhanced power density and thermal management.
Key specifications often include a high output power capability, low noise figure, and wide bandwidth, making it suitable for both commercial and military applications, including radar systems, satellite communications, and wireless base stations. The HFA50PA60C is generally packaged in a compact module for ease of integration into various systems.
When selecting an amplifier like the HFA50PA60C, consider factors such as power supply requirements, thermal performance, and impedance matching to ensure optimal performance in the intended application.

Features

The HFA50PA60C is a high-performance power MOSFET designed for various applications, including power supplies and motor drives. Key features include:
1. Voltage Rating: Rated for 600V, making it suitable for high-voltage applications.
2. Current Rating: Capable of handling up to 50A continuous current, enabling efficient power management.
3. RDS(on): Low on-resistance (typically around 0.13 ohms), which minimizes power loss and improves efficiency.
4. Gate Threshold Voltage: Designed with a low gate threshold voltage, allowing for easy driving with low-voltage control signals.
5. Fast Switching Speed: Enhanced switching characteristics lead to reduced switching losses, ideal for high-frequency applications.
6. Thermal Performance: Robust thermal performance ensures reliability under high-temperature conditions.
7. Package Type: Usually available in TO-220 or similar packages for effective heat dissipation and easy mounting.
These features make the HFA50PA60C suitable for a wide range of applications in power electronics.

Package

The HFA50PA60C is typically packaged in a TO-247 or similar type package. This package is designed for high-power applications, providing efficient heat dissipation and robust electrical performance.

Pinout

The HFA50PA60C is a high-speed, high-voltage power MOSFET produced by Harris Semiconductor (now part of Intersil). It features a total of 6 pins.
The pin functions are as follows:
1. Gate (G) - Controls the switching of the MOSFET.
2. Drain (D) - The output terminal where the load is connected.
3. Source (S) - The terminal that is typically connected to ground or the negative side of the power supply.
4. Drain (D) - There are typically two drain pins for better heat dissipation.
5. Source (S) - There may also be two source pins for similar reasons.
This configuration allows for efficient power handling and thermal management in high-frequency applications. Always refer to the specific datasheet for detailed pin configurations and characteristics.

Manufacturer

The HFA50PA60C is manufactured by ON Semiconductor, a global semiconductor company known for its wide range of products, including analog, digital, and mixed-signal devices. ON Semiconductor specializes in providing high-performance semiconductor solutions for various applications, including automotive, industrial, and consumer electronics. The company focuses on energy-efficient technologies, aiming to enable customers to design more sustainable products. Founded in 1999, ON Semiconductor has grown through acquisitions and innovation, positioning itself as a key player in the semiconductor industry.

Application

The HFA50PA60C is a high-frequency power amplifier used primarily in wireless communication systems, RF applications, and industrial heating. It is suitable for applications such as radar, telemetry, and satellite communications, providing efficient power amplification for various high-frequency signals. Additionally, it can be utilized in automotive and medical equipment that requires reliable and precise RF performance.

Equivalent

The HFA50PA60C is a high-frequency power amplifier. Equivalent products include the HFA50PA60B, HFA50PA60D, and similar models from other manufacturers like the MRF1K50, MRF1K50H, and devices from the NXP RF Power portfolio. Always check datasheets for specific specifications and compatibility.

Expédition

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Référence des frais d'expédition (DHL/FedEx):

DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

Paiements

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