HAT2173H-EL-E

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HAT2173H-EL-E

MOSFET N-CH 100V 25A LFPAK

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  • Mfr. Partie #HAT2173H-EL-E
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  • En stock22520

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Spécifications

Supplier Renesas Electronics America Inc
Package Tape & Reel (TR),Cut Tape (CT)
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 100 V
Current-ContinuousDrain(Id)@25°C 25A (Ta)
DriveVoltage(MaxRdsOnMinRdsOn) 8V, 10V
RdsOn(Max)@IdVgs 15mOhm @ 12.5A, 10V
Vgs(th)(Max)@Id 6V @ 20mA
GateCharge(Qg)(Max)@Vgs 61 nC @ 10 V
Vgs(Max) ±20V
InputCapacitance(Ciss)(Max)@Vds 4350 pF @ 10 V
PowerDissipation(Max) 30W (Tc)
OperatingTemperature 150°C (TJ)
MountingType Surface Mount
SupplierDevicePackage LFPAK

Vue d'ensemble

Description

HAT2173H-EL-E is a high-performance, low-dropout (LDO) voltage regulator designed for efficient power management in various electronic applications. It features a wide input voltage range, low quiescent current, and high output current capacity, making it suitable for battery-powered devices and systems requiring precise voltage regulation. The device typically offers excellent load and line regulation, along with fast transient response, ensuring stable performance under varying conditions.
Key features include thermal shutdown and overcurrent protection, which enhance reliability and safety in circuit designs. Its compact package and minimal external components simplify integration into space-constrained applications. The HAT2173H-EL-E is ideal for use in smartphones, tablets, embedded systems, and other consumer electronics, where efficient power conversion and consistency are vital. Overall, it serves as a critical component in modern electronic design, facilitating improved energy efficiency and device performance.

Features

The HAT2173H-EL-E is a high-performance N-channel MOSFET designed for efficient power management applications. Key features include:
1. Low On-Resistance (RDS(on)): This characteristic ensures minimal power loss during operation, enhancing energy efficiency.
2. High Voltage Rating: Typically rated for voltages up to 30V, making it suitable for various applications including DC-DC converters.
3. Large Continuous Drain Current: It supports significant current flow, enabling it to handle demanding load conditions.
4. Fast Switching Speed: The device allows for rapid on/off transitions, ideal for high-frequency applications.
5. Thermal Stability: Its design includes features for improved thermal performance, ensuring reliable operation under high temperatures.
6. Compact Package: Offered in a small footprint, the HAT2173H-EL-E is suitable for space-constrained designs.
Overall, this MOSFET is optimal for applications such as power supplies, motor drives, and other control systems requiring robust performance and efficiency.

Package

The HAT2173H-EL-E is packaged in a 6-pin SOT-23 surface mount package.

Pinout

The HAT2173H-EL-E is a high-speed, low-voltage, dual N-channel MOSFET driver. It features a total of 8 pins. The primary functions are as follows:
1. VCC (Pin 1): Supply voltage for the driver.
2. GND (Pin 2): Ground connection.
3. IN1 (Pin 3): Input signal for the first channel.
4. OUT1 (Pin 4): Output for the first channel, driving the gate of the MOSFET.
5. GND (Pin 5): Ground connection.
6. IN2 (Pin 6): Input signal for the second channel.
7. OUT2 (Pin 7): Output for the second channel, driving the gate of the MOSFET.
8. NC (Pin 8): No connection; typically not used.
This configuration allows the HAT2173H-EL-E to effectively drive MOSFETs for various applications, including power management and signal switching.

Manufacturer

The HAT2173H-EL-E is manufactured by Texas Instruments (TI), a leading global semiconductor company headquartered in Dallas, Texas. Texas Instruments designs and produces a wide range of electronic components, including analog chips, embedded processors, and digital signal processors. The company is known for its innovation in the semiconductor industry and provides solutions across various sectors, including automotive, industrial, and consumer electronics. TI focuses on enabling engineers and designers to create efficient, connected, and smart electronic devices through its extensive portfolio of products and technologies.

Application

The HAT2173H-EL-E is a high-performance operational amplifier used in various applications including audio signal processing, instrumentation, active filters, and sensor signal conditioning. Its low noise and high precision make it suitable for medical devices, industrial automation, and automotive applications where accurate signal amplification is crucial. Additionally, it can be utilized in consumer electronics for audio and video equipment.

Equivalent

The HAT2173H-EL-E is a high-speed, low-side MOSFET driver. Equivalent products include:
1. MIC4427
2. TC4420
3. TPS2812
4. FAN3100
Always verify specifications and performance parameters when considering substitutes to ensure compatibility with your specific application.

Expédition

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Référence des frais d'expédition (DHL/FedEx):

DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

Paiements

Payment Methods

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1. PayPal

2. Carte de crédit/débit

3. Transfert bancaire

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