FQPF8N80C

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FQPF8N80C

MOSFET N-CH 800V 8A TO220F

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Spécifications

Package Tube
Series QFET®
ProductStatus Obsolete
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 800 V
Current-ContinuousDrain(Id)@25°C 8A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 10V
RdsOn(Max)@IdVgs 1.55Ohm @ 4A, 10V
Vgs(th)(Max)@Id 5V @ 250µA
GateCharge(Qg)(Max)@Vgs 45 nC @ 10 V
Vgs(Max) ±30V
InputCapacitance(Ciss)(Max)@Vds 2050 pF @ 25 V
PowerDissipation(Max) 59W (Tc)
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Through Hole
SupplierDevicePackage TO-220F-3

Vue d'ensemble

Description

The FQPF8N80C is a high-voltage N-channel MOSFET designed for efficient switching applications. With a maximum drain-source voltage (V_DS) of 800V and a continuous drain current (I_D) rating of 8A, this MOSFET is suitable for use in power supply circuits, motor drives, and other high-voltage applications.
Key features include low on-resistance (R_DS(on)), which enhances efficiency and reduces heat generation during operation. The FQPF8N80C offers fast switching speeds, making it ideal for high-frequency applications. Its rugged design ensures reliability in demanding environments.
Applications typically include DC-DC converters, inverters, and switch-mode power supplies (SMPS). The device is housed in a TO-220 package, providing good thermal performance and ease of heat sinking. Overall, the FQPF8N80C is favored in various industrial applications due to its robustness and performance characteristics.

Features

The FQPF8N80C is an N-channel MOSFET featuring a maximum drain-source voltage (V_DS) of 800V and a continuous drain current (I_D) of 8A at a temperature of 25°C. It boasts a low on-resistance (R_DS(on)) of around 0.8Ω, which enhances its efficiency in power applications. The device is capable of fast switching speeds, making it suitable for applications like switch-mode power supplies, motor controllers, and other high-voltage circuits.
Additionally, the FQPF8N80C has a high gate threshold voltage and is designed to operate over a wide temperature range, ensuring reliable performance in various conditions. Its TO-220 package allows for effective heat dissipation, which is crucial for maintaining performance during operation. Overall, this MOSFET is an excellent choice for high-voltage switching applications, providing a balance of efficiency, performance, and thermal management.

Package

The FQPF8N80C is typically housed in a TO-220 package type. This package is designed for power MOSFET applications, providing efficient heat dissipation and ease of mounting on heat sinks.

Pinout

The FQPF8N80C is an N-channel MOSFET with a pin count of 3. The pin configuration is as follows:
1. Gate (G): This is the control terminal that regulates the flow of current between the drain and source. It is used to turn the MOSFET on and off.

2. Drain (D): This terminal is where the current flows out of the MOSFET. It connects to the load.
3. Source (S): This terminal is where the current flows into the MOSFET, typically connected to ground or the lower potential in the circuit.
The FQPF8N80C is designed for high-voltage applications, with a maximum drain-source voltage (V_DS) of 800V and can handle a continuous drain current (I_D) of 8A. Its high switching speed and low on-resistance make it suitable for various applications, including power supplies and motor control.

Manufacturer

The FQPF8N80C is manufactured by ON Semiconductor, a leading global supplier of semiconductor-based solutions. ON Semiconductor specializes in designing and manufacturing a wide range of semiconductor products, including power management, analog, and discrete components. The company serves various industries such as automotive, communications, computing, consumer electronics, and industrial applications. They focus on energy-efficient semiconductor technologies, aiming to support the growing demand for sustainable solutions in a variety of electronic applications. ON Semiconductor is known for its commitment to innovation and quality in the semiconductor market.

Application

The FQPF8N80C is a power MOSFET primarily used in applications such as switch-mode power supplies, motor control, and DC-DC converters. Its high voltage and current capabilities make it suitable for high-efficiency power management in industrial equipment, consumer electronics, and renewable energy systems, including solar inverters. Additionally, it can be found in automotive applications for power distribution and management.

Equivalent

The FQPF8N80C is an N-channel MOSFET. Equivalent products include the IRF840, IRF8880, STP8NK80Z, and MTP8N80E. Always verify specific ratings such as V_DS, I_D, and R_DS(on) for compatibility in your application.

Expédition

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Référence des frais d'expédition (DHL/FedEx):

DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

Paiements

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