FQPF8N60C

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FQPF8N60C

MOSFET N-CH 600V 7.5A TO220F

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Spécifications

Series QFET®
Part Status Obsolete
Base Product Number FQPF8
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 7.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 1.2Ohm @ 3.75A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 36 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 1255 pF @ 25 V
Power Dissipation (Max) 48W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220F-3
Package TO-220-3 Full Pack
Packaging Tube

Vue d'ensemble

Description

The FQPF8N60C is a high-voltage N-channel MOSFET designed for various switching and amplification applications. It features a maximum drain-source voltage (V_DS) of 600V and a continuous drain current (I_D) of 8A at a specified case temperature. Its low on-resistance (R_DS(on)) minimizes conduction losses, making it suitable for power supply circuits, motor drivers, and inverters.
This MOSFET has a fast switching speed, which enhances efficiency in high-frequency applications. It is housed in a TO-220 package, facilitating heat dissipation and easy mounting to heat sinks. The FQPF8N60C also includes a gate-source threshold voltage range that allows for compatibility with various gate drive voltages.
Overall, the FQPF8N60C is a reliable component for engineers seeking efficient power management solutions in high-voltage environments. Its robust performance characteristics make it an excellent choice for industrial and consumer electronics applications.

Features

The FQPF8N60C is an N-channel MOSFET designed for high-voltage applications. Key features include:
1. Voltage Rating: It can handle a maximum drain-source voltage of 600V, making it suitable for high-voltage circuits.
2. Continuous Drain Current: It supports a continuous drain current of up to 8A, allowing it to manage significant power loads.
3. On-Resistance: The MOSFET has a low on-resistance (R_DS(on)) of around 0.8 ohms at a gate-source voltage of 10V, which enhances efficiency by reducing power loss.
4. Gate Threshold Voltage: The gate threshold voltage ranges from 2V to 4V, ensuring it can be driven effectively with standard control voltages.
5. Package Type: Typically available in TO-220 or similar packages, facilitating easy heat dissipation and mounting.
6. Fast Switching: The device is designed for fast switching applications, making it ideal for use in switch-mode power supplies and motor controllers.
Overall, the FQPF8N60C is a robust choice for applications requiring high voltage and efficient performance.

Package

The FQPF8N60C is typically packaged in a TO-220 format. This package type allows for efficient heat dissipation and facilitates easy mounting on heatsinks, making it suitable for high-power applications.

Pinout

The FQPF8N60C is a N-channel MOSFET with a total of 3 pins. The pin configuration and their functions are as follows:
1. Gate (G): This pin is used to control the MOSFET. By applying a voltage to the gate, you can turn the device on or off, allowing current to flow from the drain to the source.
2. Drain (D): This is the pin where the current enters the MOSFET. In an N-channel configuration, the drain is typically connected to the load.
3. Source (S): This pin is where the current exits the MOSFET back to the ground or supply.
The FQPF8N60C can handle high voltages (up to 600V) and has a maximum continuous drain current of 8A, making it suitable for various applications in power electronics, including switching power supplies and motor control.

Manufacturer

The FQPF8N60C is manufactured by ON Semiconductor. ON Semiconductor is a global semiconductor company that designs, manufactures, and sells a wide range of electronic components, including power management devices, analog and mixed-signal devices, and digital logic products. The company serves various industries, such as automotive, industrial, communications, and consumer electronics. Established in 1999 and headquartered in Phoenix, Arizona, ON Semiconductor focuses on providing innovative solutions that enhance energy efficiency and performance in electronic systems.

Application

The FQPF8N60C is an N-channel MOSFET primarily used in power management applications. Its application areas include switch mode power supplies (SMPS), DC-DC converters, motor drivers, and inverters. It is suitable for high-efficiency switching tasks, automotive electronics, and industrial equipment, where it handles high voltage and current levels effectively.

Equivalent

The FQPF8N60C is an N-channel MOSFET. Equivalent products include:
1. IRF840
2. STP8NK60Z
3. MTP8N60
4. PSMN8R0-60B
5. IXFH8N60
Always verify specifications such as voltage, current, and R_DS(on) for compatibility.

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DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

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