FQPF5N60C

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FQPF5N60C

MOSFET N-CH 600V 4.5A TO220F

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Spécifications

Package Tube
Series QFET®
ProductStatus Last Time Buy
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 600 V
Current-ContinuousDrain(Id)@25°C 4.5A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 10V
RdsOn(Max)@IdVgs 2.5Ohm @ 2.25A, 10V
Vgs(th)(Max)@Id 4V @ 250µA
GateCharge(Qg)(Max)@Vgs 19 nC @ 10 V
Vgs(Max) ±30V
InputCapacitance(Ciss)(Max)@Vds 670 pF @ 25 V
PowerDissipation(Max) 33W (Tc)
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Through Hole
SupplierDevicePackage TO-220F-3

Vue d'ensemble

Description

The FQPF5N60C is a N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high-voltage applications. It is capable of handling a maximum drain-source voltage of 600V and a continuous drain current of 5A. This MOSFET features a low on-resistance (RDS(on)), which enhances its efficiency by reducing power losses during operation.
Key specifications include a gate threshold voltage (VGS(th)) typically between 2V to 4V, making it suitable for various drive levels. The FQPF5N60C is commonly used in power supplies, motor drives, and electronic switching applications due to its high-speed switching capabilities and robustness.
Additionally, it comes in a TO-220 package, allowing for easy heat dissipation, which is crucial for maintaining performance and reliability in demanding environments. Overall, the FQPF5N60C is a versatile component for engineers looking to design efficient and reliable electronic circuits.

Features

The FQPF5N60C is an N-channel MOSFET designed for high-performance switching applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 600V, allowing it to handle high voltage applications.
2. Current Rating: The continuous drain current (I_D) is up to 5A, suitable for various load conditions.
3. R_DS(on): It offers a low on-resistance (typically 0.75Ω at V_GS = 10V), which minimizes conduction losses and improves efficiency.
4. Gate Threshold Voltage (V_GS(th)): The threshold voltage ranges from 2V to 4V, making it compatible with standard driving voltages.
5. Power Dissipation: It can dissipate up to 94W, which aids in heat management during operation.
6. Package Type: It is available in a TO-220 package, facilitating easy heat sinking and mounting.
Overall, the FQPF5N60C is suitable for applications such as power supplies, motor drivers, and converters in both consumer and industrial electronics.

Package

The FQPF5N60C is packaged in a TO-220 form factor, which is a commonly used package for high-power transistors. This package type allows for efficient heat dissipation and is suitable for various applications in power electronics.

Pinout

The FQPF5N60C is a power MOSFET with a total of 3 pins. The pin configuration and their functions are as follows:
1. Gate (G) - This pin is used to control the MOSFET. A voltage applied at the gate determines whether the MOSFET is in an on (conducting) or off (non-conducting) state.
2. Drain (D) - The drain pin is the output terminal of the MOSFET where the load is connected. It carries the current from the source to the load when the MOSFET is turned on.
3. Source (S) - The source pin is the input terminal through which the current enters the MOSFET. It is typically connected to ground or a lower voltage potential in most applications.
The FQPF5N60C is designed for high-voltage applications, with a maximum drain-source voltage (V_DS) of 600V and a continuous drain current (I_D) of up to 5A.

Manufacturer

The FQPF5N60C is manufactured by Fairchild Semiconductor, which is now a part of ON Semiconductor Corporation. Fairchild Semiconductor was known for its production of various semiconductor products, including MOSFETs (Metal-Oxide-Semiconductor Field-Effect Transistors), integrated circuits, and other electronic components. The company has a strong focus on innovation and serves a wide range of industries, including automotive, consumer electronics, and industrial applications. ON Semiconductor continues to uphold Fairchild's legacy by providing high-performance semiconductor solutions to meet the evolving needs of the electronics market.

Application

The FQPF5N60C is a high-voltage N-channel MOSFET primarily used in power electronics applications. Its key areas include switch-mode power supplies, DC-DC converters, motor drives, and inverters. It is suitable for applications requiring high efficiency and fast switching, such as electric vehicles, renewable energy systems, and industrial automation.

Equivalent

The FQPF5N60C is a N-channel MOSFET typically used in power applications. Equivalent products include:
1. IRF840
2. STP5NK60Z
3. MTP5N60E
4. FQP5N60
5. APT2M60J
Ensure to check specifications like voltage rating, current rating, and Rds(on) for compatibility.

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DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

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