FQPF4N90C

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FQPF4N90C

MOSFET N-CH 900V 4A TO220F

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Spécifications

Package Bulk,Tube
Series QFET®
ProductStatus Obsolete
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 900 V
Current-ContinuousDrain(Id)@25°C 4A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 10V
RdsOn(Max)@IdVgs 4.2Ohm @ 2A, 10V
Vgs(th)(Max)@Id 5V @ 250µA
GateCharge(Qg)(Max)@Vgs 22 nC @ 10 V
Vgs(Max) ±30V
InputCapacitance(Ciss)(Max)@Vds 960 pF @ 25 V
PowerDissipation(Max) 47W (Tc)
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Through Hole
SupplierDevicePackage TO-220F-3

Vue d'ensemble

Description

The FQPF4N90C is a high-voltage N-channel MOSFET designed for applications requiring efficient power switching. It features a maximum drain-source voltage of 900V and a continuous drain current rating of up to 4A. Its low on-resistance (RDS(on)) contributes to reduced power losses, making it suitable for applications such as power supplies, motor drives, and lighting control.
The device is constructed to handle high-speed switching, making it ideal for use in converters and inverters. It typically has a gate threshold voltage ranging from 2V to 4V, allowing for compatibility with various control circuits. Additionally, it offers thermal stability with a high junction temperature rating.
The FQPF4N90C is packaged in a TO-220 format, facilitating heat dissipation and ease of integration into thermal management systems. Overall, this MOSFET is valued for its reliability and performance in high-voltage applications.

Features

The FQPF4N90C is an N-channel MOSFET designed for high-voltage applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 900V, suitable for high-voltage circuits.
2. Current Rating: The continuous drain current (I_D) is up to 4A, allowing for substantial load handling.
3. R_DS(on): It offers a low on-resistance (R_DS(on)) typically around 0.9 ohms, which enhances efficiency by reducing power losses during operation.
4. Gate Threshold Voltage: The gate threshold voltage (V_GS(th)) is between 2V to 4V, enabling easy interfacing with various control circuits.
5. Package Type: Typically available in a TO-220 package, facilitating effective heat dissipation.
6. Fast Switching: Designed for fast switching applications, making it suitable for power supplies and inverter circuits.
Overall, the FQPF4N90C is ideal for applications requiring high voltage and efficiency, such as in power supplies, motor drives, and switching regulators.

Package

The FQPF4N90C is typically packaged in a TO-220 type package. This package is designed for power devices, providing good thermal management and ease of mounting, making it suitable for high-power applications.

Pinout

The FQPF4N90C is a N-channel MOSFET with a total of 3 pins. The pin configuration and their functions are as follows:
1. Gate (G): This pin is used to control the MOSFET. Applying a voltage to the gate allows current to flow from the drain to the source.
2. Drain (D): This pin is where the current enters the MOSFET when it is in the 'on' state. It is connected to the load in a circuit.
3. Source (S): This pin is the output terminal where the current exits the MOSFET. It is typically connected to ground or a lower voltage level in a circuit.
The FQPF4N90C is designed for high-voltage applications, with a maximum V_DS of 900V and a continuous current rating of up to 4A, making it suitable for various switching and amplification applications.

Manufacturer

The FQPF4N90C is manufactured by Fairchild Semiconductor, which is a semiconductor company that specializes in the design and production of various electronic components. Fairchild Semiconductor, founded in 1957, is known for its innovative solutions in power management, analog, and mixed-signal products, as well as discrete semiconductors such as MOSFETs and diodes. The company has been a significant player in the semiconductor industry, providing components for a wide range of applications, including consumer electronics, automotive, and industrial systems. Fairchild was acquired by ON Semiconductor in 2016, further expanding its reach and capabilities in the global semiconductor market.

Application

The FQPF4N90C is a N-channel MOSFET commonly used in power electronics applications. Its main areas include switching power supplies, motor drivers, and DC-DC converters. It is also suitable for applications in inverters, audio amplifiers, and power management circuits due to its high voltage rating and efficient switching performance.

Equivalent

The FQPF4N90C is an N-channel MOSFET. Equivalent products include:
1. IRF940
2. STP4N90Z
3. MTP4N90E
4. FQP4N90
5. PSMN4R0-30
Always verify specifications like voltage, current, and RDS(on) to ensure compatibility for your specific application.

Expédition

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Référence des frais d'expédition (DHL/FedEx):

DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

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