FQPF10N60C

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FQPF10N60C

MOSFET N-CH 600V 9.5A TO220F

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Spécifications

Series QFET®
Part Status Obsolete
Base Product Number FQPF10
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 9.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 730mOhm @ 4.75A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 57 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 2040 pF @ 25 V
Power Dissipation (Max) 50W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220F-3
Package TO-220-3 Full Pack
Packaging Tube

Vue d'ensemble

Description

The FQPF10N60C is an N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high-voltage applications. It has a maximum drain-source voltage (V_DS) of 600 volts and a continuous drain current (I_D) rating of 10 amps, making it suitable for power switching and amplifying tasks in various electronic circuits.
This MOSFET features low on-resistance (R_DS(on)), which minimizes power losses during operation, enhancing efficiency. It also boasts a high-speed switching capability, making it ideal for use in power supplies, motor drivers, and other electronic equipment where rapid switching is crucial.
The FQPF10N60C typically comes in a TO-220 package, facilitating easy heat dissipation and mounting. It's commonly used in applications such as inverters, converters, and other high-voltage circuits due to its robustness and reliability. When selecting this component, it's essential to consider its thermal characteristics and ensure it operates within specified limits to prevent damage.

Features

The FQPF10N60C is an N-channel MOSFET designed for high-efficiency applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 600V, making it suitable for high-voltage applications.
2. Current Rating: The continuous drain current (I_D) is 10A, allowing it to handle moderate loads.
3. R_DS(on): It has a low on-resistance (typical value around 0.8Ω), which minimizes conduction losses and enhances efficiency.
4. Gate Threshold Voltage: The gate-to-source threshold voltage (V_GS(th)) is typically between 2-4V, enabling easy drive with low-voltage signals.
5. Package Type: It is available in a TO-220 package, providing good thermal performance and ease of heat dissipation.
6. Fast Switching: Designed for high-speed switching applications, suitable for power supplies, motor drivers, and converters.
These features make the FQPF10N60C a versatile component in power electronics, particularly in industrial and consumer electronics applications.

Package

The FQPF10N60C is typically packaged in a TO-220 form factor, which is a commonly used package for power MOSFETs. This package offers good thermal performance and ease of mounting to heat sinks for efficient heat dissipation.

Pinout

The FQPF10N60C is an N-channel MOSFET with a pin count of 3. Its pin configuration is as follows:
1. Gate (G): This pin is used to control the MOSFET. A voltage applied to the gate creates an electric field that allows current to flow between the drain and source.

2. Drain (D): This pin is where the current enters the MOSFET when it is turned on. It connects to the load in a circuit.
3. Source (S): This pin is the point where current exits the MOSFET and typically connects to ground in a common-source configuration.
The FQPF10N60C is designed for high-voltage applications with a maximum drain-source voltage (V_DS) of 600V and a continuous drain current (I_D) rating of 10A at a case temperature of 25°C. It features low on-resistance and fast switching capabilities, making it suitable for various power management applications.

Manufacturer

The FQPF10N60C is manufactured by Fairchild Semiconductor, which is a global semiconductor company. Fairchild specializes in designing and manufacturing a wide range of semiconductor products, including power MOSFETs, diodes, analog ICs, and other devices for various applications. Founded in 1957, Fairchild was a pioneer in the semiconductor industry and has played a significant role in the development of modern electronic components. The company focuses on providing innovative solutions for industries such as automotive, consumer electronics, and industrial applications. In 2016, Fairchild was acquired by ON Semiconductor, further expanding its portfolio and capabilities in the semiconductor market.

Application

The FQPF10N60C is a 600V N-channel MOSFET used in various applications, including power supplies, motor drives, and switching regulators. It is suitable for high-efficiency converters, inverters, and lighting applications. Its low on-resistance and fast switching capabilities make it ideal for DC-DC converters and other high-frequency applications.

Equivalent

The FQPF10N60C is an N-channel MOSFET commonly used in power applications. Equivalent products include:
1. STP10NK60Z (STMicroelectronics)
2. IRF840 (Infineon)
3. MTP10N60E (ON Semiconductor)
4. AUIRF840 (Infineon)
5. FDH10N60 (Fairchild Semiconductor)
Always verify specifications such as voltage, current ratings, and RDS(on) to ensure suitability for your application.

Expédition

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Référence des frais d'expédition (DHL/FedEx):

DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

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