FQP7N80C

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FQP7N80C

MOSFET N-CH 800V 6.6A TO220-3

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Spécifications

Package Bulk,Tube
Series QFET®
ProductStatus Last Time Buy
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 800 V
Current-ContinuousDrain(Id)@25°C 6.6A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 10V
RdsOn(Max)@IdVgs 1.9Ohm @ 3.3A, 10V
Vgs(th)(Max)@Id 5V @ 250µA
GateCharge(Qg)(Max)@Vgs 35 nC @ 10 V
Vgs(Max) ±30V
InputCapacitance(Ciss)(Max)@Vds 1680 pF @ 25 V
PowerDissipation(Max) 167W (Tc)
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Through Hole
SupplierDevicePackage TO-220-3

Vue d'ensemble

Description

The FQP7N80C is a high-voltage N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for applications that require efficient switching and high power handling. It features a maximum drain-source voltage (V_DS) of 800V, a continuous drain current (I_D) of 7A, and a low on-resistance (R_DS(on)) of approximately 0.8 ohms, which helps minimize power loss during operation.
The FQP7N80C is commonly used in power supplies, motor drives, and high-voltage applications due to its robust performance and thermal stability. It is often packaged in a TO-220 form factor, allowing for effective heat dissipation.
Key specifications include a gate threshold voltage (V_GS(th)) ranging from 2 to 4V, making it suitable for logic-level gate driving. Its fast switching characteristics also contribute to improved efficiency in various circuits, particularly in switching regulators and inverters. Overall, the FQP7N80C is a reliable choice for designers seeking high-performance MOSFETs for demanding applications.

Features

The FQP7N80C is an N-channel MOSFET designed for high-voltage applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 800V, making it suitable for various high-voltage circuits.
2. Current Rating: The continuous drain current (I_D) is rated at 7A, with a pulsed current capability higher than this value.
3. On-Resistance: The R_DS(on) is low, typically around 0.85Ω, which helps minimize power loss during operation.
4. Gate-Source Voltage: Supports a gate-source voltage (V_GS) of ±20V, allowing for easy drive with standard gate drivers.
5. Package Type: Available in a TO-220 package, facilitating heat dissipation and easy mounting on heatsinks.
6. Safe Operating Area: Designed to handle significant power without overheating, making it reliable for switching applications.
Overall, the FQP7N80C is suitable for power supplies, motor drivers, and other applications requiring high efficiency and robust performance.

Package

The FQP7N80C is typically packaged in a TO-220 package type. This package allows for efficient heat dissipation and is commonly used in power transistors.

Pinout

The FQP7N80C is an N-channel MOSFET with a pin count of 3. The pin configuration and their functions are as follows:
1. Gate (G): This pin controls the operation of the MOSFET, allowing the device to turn on or off based on the voltage applied to it.
2. Drain (D): This pin is connected to the load and carries the current when the MOSFET is in the 'on' state.
3. Source (S): This pin is connected to the ground or reference point in the circuit and completes the current path.
The FQP7N80C is designed for high-voltage applications, with a maximum drain-source voltage (V_DS) rating of 800V and a continuous drain current (I_D) rating of 7A. It features low on-resistance, making it suitable for power switching applications.

Manufacturer

The FQP7N80C is a power MOSFET manufactured by Fairchild Semiconductor, which is now part of ON Semiconductor. Fairchild Semiconductor was known for its wide range of semiconductor solutions, including power management, analog, and logic devices. The company focused on providing technologies that served various sectors such as automotive, industrial, and consumer electronics. After its acquisition by ON Semiconductor in 2016, it continued to develop and supply innovative semiconductor products. ON Semiconductor is a leading global supplier of semiconductor-based solutions, emphasizing energy-efficient technologies for a variety of applications.

Application

The FQP7N80C is an N-channel MOSFET commonly used in power management applications, including switch-mode power supplies (SMPS), motor drivers, and inverters. Its high voltage rating (800V) makes it suitable for high-voltage applications, such as industrial power control, lighting, and automotive systems. Additionally, it is utilized in DC-DC converters and as a switch for various electronic circuits.

Equivalent

The FQP7N80C is a high-voltage N-channel MOSFET. Equivalent products include:
1. IRF840
2. STP7N80Z
3. MKP7N80
4. RFP7N80
5. BUK7M80-55
Always verify specifications like Vds, Id, and Rds(on) before substitution.

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FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

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