FQP4N90C

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FQP4N90C

MOSFET N-CH 900V 4A TO220-3

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Spécifications

Package Tube
Series QFET®
ProductStatus Obsolete
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 900 V
Current-ContinuousDrain(Id)@25°C 4A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 10V
RdsOn(Max)@IdVgs 4.2Ohm @ 2A, 10V
Vgs(th)(Max)@Id 5V @ 250µA
GateCharge(Qg)(Max)@Vgs 22 nC @ 10 V
Vgs(Max) ±30V
InputCapacitance(Ciss)(Max)@Vds 960 pF @ 25 V
PowerDissipation(Max) 140W (Tc)
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Through Hole
SupplierDevicePackage TO-220-3

Vue d'ensemble

Description

The FQP4N90C is a power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high voltage applications. It features a maximum drain-source voltage (VDS) of 900V, making it suitable for use in high-voltage circuits, such as in power supplies and motor drives. The device has a low on-resistance (RDS(on)) of approximately 0.65 ohms, ensuring efficient operation with minimal power loss.
With a maximum continuous drain current (ID) rating of 4A, it is ideal for applications requiring reliable performance under demanding conditions. The FQP4N90C also has a high gate threshold voltage, allowing it to operate effectively in high-speed switching environments.
Its TO-220 package facilitates easy heat dissipation and mounting, making it a popular choice among engineers and hobbyists for various electronic designs. Overall, the FQP4N90C is a versatile and robust component suitable for applications needing stable performance in high voltage scenarios.

Features

The FQP4N90C is an N-channel MOSFET designed for high-voltage applications. Key features include:
1. Voltage Rating: Maximum drain-source voltage (V_DS) of 900V, allowing for use in high-voltage circuits.
2. Current Rating: Continuous drain current (I_D) of 4A, suitable for medium power applications.
3. On-Resistance: Low on-resistance (R_DS(on)) of approximately 0.75 ohms at a gate-source voltage (V_GS) of 10V, leading to efficient operation and reduced power loss.
4. Gate Threshold Voltage: V_GS(th) of 2-4V, enabling straightforward drive requirements.
5. Fast Switching: Capable of fast switching speeds, making it suitable for applications such as switching power supplies and motor control.
6. Package Type: Typically available in TO-220 or similar packages, offering good thermal performance.
These features make the FQP4N90C ideal for applications in power electronics, including converters, inverters, and other high-voltage switching applications.

Package

The FQP4N90C is typically packaged in a TO-220 format. This package type is designed for high power applications and provides efficient heat dissipation, making it suitable for use in power switching and amplification circuits.

Pinout

The FQP4N90C is an N-channel MOSFET that features a total of 3 pins. The pin configuration is as follows:
1. Gate (G): This pin is used to control the MOSFET. A voltage applied to the gate determines whether the device is in the "on" or "off" state.
2. Drain (D): This pin is where the current flows out of the MOSFET when it is turned on. The drain is connected to the load in a typical circuit.
3. Source (S): This pin is connected to ground or the lower potential in the circuit. The current enters through the source when the MOSFET is activated.
The FQP4N90C is designed for high voltage applications, with a maximum drain-source voltage (V_DS) of 900V and a continuous drain current (I_D) of 4A. It is commonly used in power switching applications and can handle high power levels efficiently.

Manufacturer

The FQP4N90C is manufactured by Fairchild Semiconductor, which is a company known for its production of semiconductor devices. Fairchild specializes in a wide range of products, including power transistors, diodes, and integrated circuits, catering to various applications in the electronics industry. Founded in the 1950s, Fairchild was a pioneer in semiconductor technology and has played a significant role in the development of the modern electronics landscape. The company focuses on innovation and quality in its semiconductor solutions, serving markets such as automotive, industrial, and consumer electronics. In 2016, Fairchild Semiconductor was acquired by ON Semiconductor, further expanding its capabilities and product offerings in the semiconductor market.

Application

The FQP4N90C is a high-voltage N-channel MOSFET primarily used in power electronics applications. Its application areas include switching power supplies, motor control circuits, inverters, and audio amplifiers. It is also utilized in high-efficiency power converters, lighting systems, and electronic ballast circuits, where efficient switching and thermal management are essential.

Equivalent

The FQP4N90C is a N-channel MOSFET. Equivalent products include the IRF4905, STP4N90, and AOD4N90. Always check the datasheet for specific parameters such as voltage, current ratings, and package type to ensure compatibility in your application.

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FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

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