FQP33N10

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FQP33N10

MOSFET N-CH 100V 33A TO220-3

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Spécifications

Package Bulk,Tube
Series QFET®
ProductStatus Last Time Buy
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 100 V
Current-ContinuousDrain(Id)@25°C 33A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 10V
RdsOn(Max)@IdVgs 52mOhm @ 16.5A, 10V
Vgs(th)(Max)@Id 4V @ 250µA
GateCharge(Qg)(Max)@Vgs 51 nC @ 10 V
Vgs(Max) ±25V
InputCapacitance(Ciss)(Max)@Vds 1500 pF @ 25 V
PowerDissipation(Max) 127W (Tc)
OperatingTemperature -55°C ~ 175°C (TJ)
MountingType Through Hole
SupplierDevicePackage TO-220-3

Vue d'ensemble

Description

The FQP33N10 is an N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) commonly used for switching and amplification applications. It features a high maximum drain-source voltage (V_DS) of 100V, a continuous drain current (I_D) of 33A, and a low on-resistance (R_DS(on)) typically around 0.04 ohms, which makes it efficient for power applications. The device is housed in a TO-220 package, allowing for easy heat dissipation.
Key characteristics include a gate threshold voltage (V_GS(th)) ranging from 2-4V, indicating it begins to turn on at relatively low voltages. Its robust performance makes it suitable for applications in power supplies, motor control, and audio amplifiers.
When using the FQP33N10, it is crucial to consider thermal management and ensure the gate drive voltage is sufficient to fully turn on the device, minimizing heat generation and maximizing efficiency. Overall, this MOSFET is favored for its reliability and ability to handle high power levels in various electronic circuits.

Features

The FQP33N10 is an N-channel MOSFET designed for power applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (Vds) of 100V, making it suitable for high-voltage applications.
2. Current Rating: With a continuous drain current (Id) of 33A, it can handle significant loads.
3. Rds(on): The on-resistance is typically low (about 0.033 ohms), resulting in minimal power loss during operation.
4. Gate Threshold Voltage: Vgs(th) ranges from 2V to 4V, allowing for easy driving in logic-level applications.
5. Fast Switching Speed: Designed for high-speed switching, it can improve efficiency in power conversion circuits.
6. Package: Available in TO-220 and other package types, facilitating heat dissipation and mounting flexibility.
7. Applications: Commonly used in power supplies, motor controllers, and amplifier circuits.
These features make the FQP33N10 a versatile choice for various electronic designs requiring reliable switching and handling of high currents.

Package

The FQP33N10 is typically packaged in a TO-220 package type. This package provides good thermal performance and is suitable for high-power applications.

Pinout

The FQP33N10 is an N-channel MOSFET (metal-oxide-semiconductor field-effect transistor) with a pin count of 3. The pin configuration is as follows:
1. Gate (G): This pin controls the MOSFET's operation by applying a voltage, which allows current to flow between the drain and source.
2. Drain (D): This pin is where the current flows out of the MOSFET. It connects to the load or circuit where power is delivered.
3. Source (S): This pin is where the current enters the MOSFET. It typically connects to ground or the lower potential side of the circuit.
The FQP33N10 is known for its low on-resistance and high-speed switching capabilities, making it suitable for various applications like power management, switching regulators, and motor control.

Manufacturer

The FQP33N10 is manufactured by Fairchild Semiconductor, which is now part of ON Semiconductor, a leading semiconductor company. Fairchild Semiconductor was originally established in 1957 and became known for its innovative products in the field of analog, digital, and mixed-signal ICs (integrated circuits), as well as discrete semiconductors like MOSFETs, diodes, and power management devices. ON Semiconductor, which acquired Fairchild in 2016, focuses on developing energy-efficient solutions and a wide range of semiconductor components for various applications, including automotive, industrial, and consumer electronics. The FQP33N10 is a N-channel MOSFET used in power applications, known for its high efficiency and performance in switching applications.

Application

The FQP33N10 is a N-channel MOSFET commonly used in applications such as power management, DC-DC converters, motor drivers, and switching power supplies. Its high current handling and low on-resistance make it suitable for automotive, industrial control systems, and audio amplifiers. Additionally, it can be used in high-frequency switching applications and as a load switch in various electronic devices.

Equivalent

The FQP33N10 is an N-channel MOSFET with a voltage rating of 100V and a current rating of 33A. Equivalent products include:
1. IRF330
2. IRF320
3. STP33NF10
4. RFP30N10
5. BTA30-100V
Always verify specifications such as RDS(on), gate threshold voltage, and package type for compatibility in your specific application.

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DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

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