FQD9N25TM

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FQD9N25TM

MOSFET N-CH 250V 7.4A DPAK

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Spécifications

Series QFET®
Part Status Obsolete
Base Product Number FQD9N25
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 250 V
Current - Continuous Drain (Id) @ 25°C 7.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 420mOhm @ 3.7A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 20 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 700 pF @ 25 V
Power Dissipation (Max) 2.5W (Ta), 55W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TO-252AA
Package TO-252-3, DPAK (2 Leads + Tab), SC-63
Packaging Tape & Reel (TR)

Vue d'ensemble

Description

FQD9N25TM is a high-performance N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for power applications. With a voltage rating of 25V and a current rating of 9A, it is suitable for switching and amplification tasks in various electronic circuits. This MOSFET features low on-resistance, which minimizes power loss and heat generation during operation.
The device is characterized by a fast switching speed, making it ideal for applications in power supplies, motor drivers, and automotive electronics. Its robust thermal performance ensures reliable operation in demanding environments.
FQD9N25TM is often used in conjunction with other components in power management systems, enhancing efficiency and performance in applications like DC-DC converters and inverters. Its compact package design allows for easy integration into circuit boards, making it a popular choice among engineers and developers in the electronics industry.

Features

The FQD9N25TM is a high-performance N-channel MOSFET designed for various applications, including power management and switching. Key features include:
1. Voltage Rating: Supports a maximum drain-source voltage (V_DS) of 250V, making it suitable for high-voltage applications.
2. Current Rating: Capable of handling a continuous drain current (I_D) of up to 9A, depending on the thermal conditions.
3. Low On-Resistance: Exhibits a low R_DS(on) of approximately 0.1 ohms (typical), enhancing efficiency by reducing power losses.
4. Fast Switching Speed: Designed for rapid switching, which is beneficial for power conversion applications.
5. Thermal Performance: Features a TO-220 package that aids in effective heat dissipation.
6. Robustness: Designed to handle high-energy transients, making it reliable in harsh environments.
Overall, the FQD9N25TM is ideal for applications such as power supplies, motor drives, and DC-DC converters, where efficiency and high performance are crucial.

Package

The FQD9N25TM is typically packaged in a TO-220 form factor, which is a type of metal can package designed for high-power applications. This packaging provides effective thermal management and is suitable for easy mounting on heatsinks.

Pinout

The FQD9N25TM is an N-channel MOSFET with a pin count of 8. Its primary function is to switch and amplify electronic signals in various applications, including power management and motor control.
The pin configuration is as follows:
1. Gate (G): Controls the MOSFET switching.
2. Drain (D): The output where the load is connected.
3. Source (S): Connects to ground or negative voltage.
4. Tab (Heat Sink): Often used for heat dissipation.
Key features include low on-resistance, high-speed switching capabilities, and a maximum drain-source voltage (Vds) rating of 25V. The device is commonly utilized in DC-DC converters, LED drivers, and other power applications.

Manufacturer

The FQD9N25TM is manufactured by Fairchild Semiconductor, which is now a part of ON Semiconductor Corporation. Fairchild Semiconductor is known for its production of a wide range of semiconductor devices, including power transistors, diodes, and integrated circuits. The company primarily serves various industries such as automotive, industrial, consumer electronics, and telecommunications, providing solutions that enhance energy efficiency and overall performance in electronic systems. ON Semiconductor focuses on creating innovative semiconductor solutions for power management and signal processing, catering to the growing demand for energy-efficient technologies and advanced electronic applications.

Application

The FQD9N25TM is an N-channel MOSFET primarily used in power electronics applications such as power supplies, motor drivers, and inverters. Its high voltage and current ratings make it suitable for switching applications in electric vehicles, renewable energy systems, and industrial automation. Additionally, it is utilized in DC-DC converters and general-purpose switching circuits.

Equivalent

The FQD9N25TM is an N-channel MOSFET. Equivalent products include:
1. IRF250
2. STP25NM60
3. FQP25N25
4. IPS250N25
5. MTP25N25
Always verify specifications such as voltage, current rating, and package type before substitution.

Expédition

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Référence des frais d'expédition (DHL/FedEx):

DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

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