FQD4P40TM

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FQD4P40TM

POWER FIELD-EFFECT TRANSISTOR, 2

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Spécifications

Package Bulk
Series QFET®
ProductStatus Active
FETType P-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 400 V
Current-ContinuousDrain(Id)@25°C 2.7A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 10V
RdsOn(Max)@IdVgs 3.1Ohm @ 1.35A, 10V
Vgs(th)(Max)@Id 5V @ 250µA
GateCharge(Qg)(Max)@Vgs 23 nC @ 10 V
Vgs(Max) ±30V
InputCapacitance(Ciss)(Max)@Vds 680 pF @ 25 V
PowerDissipation(Max) 2.5W (Ta), 50W (Tc)
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
SupplierDevicePackage TO-252, (D-Pak)

Vue d'ensemble

Description

FQD4P40TM is a N-channel power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high-efficiency switching applications. It features a low on-resistance, making it suitable for power management in various electronic circuits, such as power supplies, DC-DC converters, and motor drives. With a voltage rating of 40V and a continuous drain current of around 4A, it offers robust performance in both consumer and industrial applications.
The device is typically housed in a TO-220 package, which provides efficient heat dissipation, allowing it to operate effectively under high power conditions. Its fast switching capabilities help reduce energy losses, enhancing overall system efficiency. FQD4P40TM is often used in conjunction with microcontrollers and other control circuits for reliable operation in various electronic systems.

Features

The FQD4P40TM is a power MOSFET designed for high-efficiency applications. Key features include:
1. Voltage Rating: It typically has a maximum drain-source voltage (Vds) of 40V, making it suitable for various applications.
2. Current Handling: The device can handle continuous drain currents, often around 30A, depending on the specific package and thermal management.
3. Low On-Resistance: It boasts a low Rds(on), which minimizes conduction losses and improves efficiency.
4. Fast Switching Speed: The MOSFET is optimized for fast switching, beneficial in applications such as DC-DC converters and motor control.
5. Thermal Performance: The package design supports effective heat dissipation, allowing for reliable operation under high load conditions.
6. Gate Threshold Voltage: It has a relatively low gate threshold voltage, enabling easy driving with standard logic levels.
Overall, the FQD4P40TM is suitable for power management in automotive, industrial, and consumer electronics applications.

Package

The FQD4P40TM is packaged in a TO-220 type case. This package type is commonly used for power MOSFETs, providing efficient heat dissipation and ease of mounting on heatsinks for thermal management.

Pinout

The FQD4P40TM is a P-channel MOSFET with a pin count of 3. The typical pin configuration is as follows:
1. Gate (G): This pin is used to control the MOSFET. A negative voltage relative to the source turns the device on.
2. Source (S): This is the terminal where the current enters the MOSFET. For a P-channel device, it is connected to the higher voltage side of the circuit.
3. Drain (D): This pin is where the current exits the MOSFET. It is connected to the load.
The FQD4P40TM is commonly used in applications like power management, switching, and amplification due to its ability to handle significant voltage and current levels. It features a maximum continuous drain current of 4A and a maximum V_DS (drain-source voltage) rating of -40V.

Manufacturer

The FQD4P40TM is manufactured by Fairchild Semiconductor, which is now part of ON Semiconductor. Fairchild Semiconductor was known for its expertise in power management, analog, and mixed-signal semiconductor solutions. The company specializes in providing a wide range of electronic components, including transistors, diodes, and integrated circuits, primarily for applications in consumer electronics, automotive, industrial, and communication sectors. Fairchild's focus has been on innovation and quality in semiconductor technology, making it a key player in the industry's development of efficient and reliable electronic components.

Application

FQD4P40TM is a P-channel MOSFET primarily used in power management applications. Its key areas include DC-DC converters, battery management systems, and load switching in power supplies. Additionally, it finds use in automotive electronics, and motor control circuits due to its efficient switching capabilities and ability to handle high current loads.

Equivalent

The FQD4P40TM is a P-channel MOSFET. Equivalent products include the IRF9520, Si8233, BSS84, and STP4NK40Z. Always verify the specifications like V_DS, I_D, R_DS(on), and package type to ensure compatibility for your specific application.

Expédition

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Référence des frais d'expédition (DHL/FedEx):

DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

Paiements

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