FQD2N60CTM

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FQD2N60CTM

MOSFET N-CH 600V 1.9A DPAK

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Spécifications

Package Tape & Reel (TR),Cut Tape (CT)
Series QFET®
ProductStatus Obsolete
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 600 V
Current-ContinuousDrain(Id)@25°C 1.9A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 10V
RdsOn(Max)@IdVgs 4.7Ohm @ 950mA, 10V
Vgs(th)(Max)@Id 4V @ 250µA
GateCharge(Qg)(Max)@Vgs 12 nC @ 10 V
Vgs(Max) ±30V
InputCapacitance(Ciss)(Max)@Vds 235 pF @ 25 V
PowerDissipation(Max) 2.5W (Ta), 44W (Tc)
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
SupplierDevicePackage TO-252AA

Vue d'ensemble

Description

The FQD2N60CTM is an N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high-voltage applications. With a maximum drain-source voltage rating of 600V, it is suitable for use in power supplies, motor control systems, and various switching applications. The device has a low on-resistance (R_DS(on)), which minimizes power loss and improves efficiency during operation.
It features a high-speed switching capability, allowing it to handle rapid changes in voltage and current, making it ideal for pulsed applications. The FQD2N60CTM typically comes in a TO-220 package, facilitating easy heat dissipation.
Key specifications include a continuous drain current rating of around 2A, making it effective for medium power applications. Its gate threshold voltage allows for compatibility with standard drive voltages. Overall, the FQD2N60CTM is commonly used in circuit designs requiring reliable and efficient switching performance in high-voltage environments.

Features

The FQD2N60CTM is a N-channel MOSFET designed for high-voltage applications. Key features include:
1. Voltage Rating: Capable of handling up to 600V, making it suitable for power supply and switch mode applications.
2. Continuous Drain Current: Supports a continuous current of 2A, which allows it to drive moderate loads.
3. Low RDS(on): Exhibits a low on-resistance (RDS(on)), typically around 0.85 ohms at a gate voltage of 10V, which enhances efficiency by reducing power losses.
4. Fast Switching Speed: Provides quick turn-on and turn-off times, which are beneficial for high-frequency applications.
5. Gate Threshold Voltage: Features a gate threshold voltage (VGS(th)) of 2-4V, allowing it to be driven by lower voltage levels.
6. Thermal Performance: Comes in a TO-220 package, facilitating effective heat dissipation and improving reliability in various environments.
These attributes make the FQD2N60CTM suitable for applications such as power converters, inverter circuits, and other high-voltage switching applications.

Package

The FQD2N60CTM is packaged in a TO-220 type package. This package is designed for efficient heat dissipation and is commonly used for power transistors in various applications.

Pinout

The FQD2N60CTM is a N-channel MOSFET with a pin count of 3. The pin configuration is as follows:
1. Gate (G): This pin controls the MOSFET and is used to turn it on or off.
2. Drain (D): This pin is where the load is connected and allows current to flow out of the MOSFET when it is in the on state.
3. Source (S): This pin is connected to the ground or negative side of the circuit.
The FQD2N60CTM has a maximum continuous drain current rating of 2A and a maximum drain-source voltage (V_DS) of 600V, making it suitable for high-voltage applications. It is often used in power switching applications and in circuits like DC-DC converters, motor drivers, and other load control systems.

Manufacturer

The FQD2N60CTM is manufactured by Fairchild Semiconductor, which is a company specializing in the production of semiconductor solutions. Founded in 1957, Fairchild Semiconductor is known for its innovations in integrated circuits and discrete devices, including transistors, diodes, and power management products. The company primarily serves various sectors, including automotive, consumer electronics, industrial applications, and telecommunications. In 2016, Fairchild was acquired by ON Semiconductor, expanding its portfolio and capabilities in the semiconductor market.

Application

The FQD2N60CTM is an N-channel MOSFET primarily used in power electronics applications. Its key areas include switching power supplies, DC-DC converters, motor drivers, and inverters for renewable energy systems. It is suitable for high-voltage and high-current applications, making it ideal for consumer electronics, industrial automation, and automotive systems.

Equivalent

The FQD2N60CTM is a N-channel MOSFET. Equivalent products include the IRFBC30, STP2N60, and MTP2N60. Always verify specifications such as voltage, current ratings, and package type before substitution to ensure compatibility in your application.

Expédition

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DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

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