FQD2N100TM

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FQD2N100TM

MOSFET N-CH 1000V 1.6A DPAK

  • Fabricant
  • Mfr. Partie #FQD2N100TM
  • Paquet TO-252
  • Fiche de données
  • En stock4421

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Spécifications

Package Tape & Reel (TR),Cut Tape (CT),Bulk
Series QFET®
ProductStatus Obsolete
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 1000 V
Current-ContinuousDrain(Id)@25°C 1.6A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 10V
RdsOn(Max)@IdVgs 9Ohm @ 800mA, 10V
Vgs(th)(Max)@Id 5V @ 250µA
GateCharge(Qg)(Max)@Vgs 15.5 nC @ 10 V
Vgs(Max) ±30V
InputCapacitance(Ciss)(Max)@Vds 520 pF @ 25 V
PowerDissipation(Max) 2.5W (Ta), 50W (Tc)
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
SupplierDevicePackage TO-252AA

Vue d'ensemble

Description

The FQD2N100TM is a N-channel MOSFET (metal-oxide-semiconductor field-effect transistor) designed for high-speed switching applications. It features a maximum drain-source voltage (V_DS) of 100V, a continuous drain current (I_D) of 2A, and a low on-resistance (R_DS(on)), which enhances efficiency in power management systems.
This MOSFET is often used in power supplies, motor control circuits, and other applications requiring efficient switching. Its fast switching capabilities reduce energy loss during operation, making it suitable for applications where thermal performance is critical.
The FQD2N100TM typically comes in a TO-220 package, facilitating heat dissipation and easy integration into circuits. Overall, it is a reliable choice for designers looking for efficient, high-performance components in electronic applications.

Features

The FQD2N100TM is an N-channel MOSFET designed for high-performance switching applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 100V, making it suitable for various power applications.
2. Current Rating: The continuous drain current (I_D) is up to 2.0A, allowing it to handle moderate loads efficiently.
3. On-Resistance: It features a low R_DS(on), typically around 0.5 ohms, which minimizes power losses during operation.
4. Gate Threshold Voltage: The gate-source threshold (V_GS(th)) is low, facilitating easy driving with standard gate voltages.
5. Package: It is available in a TO-220 package, providing efficient heat dissipation and ease of mounting.
6. Fast Switching: Offers rapid switching capabilities, making it suitable for high-frequency applications.
These characteristics make the FQD2N100TM ideal for power supply circuits, motor drivers, and other applications requiring reliable and efficient switching.

Package

The FQD2N100TM is typically packaged in a TO-220 format, which is a metal package ideal for power applications, allowing for efficient heat dissipation.

Pinout

The FQD2N100TM is an N-channel MOSFET with a total of 3 pins. The pin configuration is as follows:
1. Gate (G) - This pin is used to control the MOSFET; applying a voltage here allows current to flow between the drain and source.
2. Drain (D) - This is the terminal through which the main current flows out of the MOSFET when it is turned on.
3. Source (S) - This terminal is where the current enters the MOSFET when it is conducting.
The FQD2N100TM is designed for high-voltage applications, with a maximum drain-source voltage (V_DS) of 100V and a maximum continuous drain current (I_D) of 2A. It is commonly used in power management, switching applications, and as a low-side switch in various electronic circuits.

Manufacturer

The FQD2N100TM is manufactured by Fairchild Semiconductor, a company known for its production of semiconductor devices. Fairchild, which was founded in 1957, has a long history of innovation in the semiconductor industry, specializing in a wide range of products including power transistors, diodes, and integrated circuits. The company focuses on providing solutions for various applications, including automotive, industrial, and consumer electronics. Fairchild Semiconductor was acquired by ON Semiconductor in 2016, enhancing its capabilities and product offerings within the semiconductor market.

Application

The FQD2N100TM is an N-channel MOSFET primarily used in power management applications. Its high voltage and current ratings make it suitable for switch-mode power supplies, automotive applications, motor control, and power inverters. Additionally, it can be utilized in various electronic circuits that require efficient switching and amplification.

Equivalent

The FQD2N100TM is an N-channel MOSFET commonly used in power applications. Equivalent products include the IRF210, STP2N100, and MTP2N100. Always check the specific electrical characteristics and ratings to ensure compatibility for your application.

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FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

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