FQD16N25CTM

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FQD16N25CTM

MOSFET N-CH 250V 16A DPAK

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Spécifications

Package Tape & Reel (TR),Cut Tape (CT)
Series QFET®
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 250 V
Current-ContinuousDrain(Id)@25°C 16A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 10V
RdsOn(Max)@IdVgs 270mOhm @ 8A, 10V
Vgs(th)(Max)@Id 4V @ 250µA
GateCharge(Qg)(Max)@Vgs 53.5 nC @ 10 V
Vgs(Max) ±30V
InputCapacitance(Ciss)(Max)@Vds 1080 pF @ 25 V
PowerDissipation(Max) 160W (Tc)
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
SupplierDevicePackage TO-252AA

Vue d'ensemble

Description

The FQD16N25CTM is an N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high-efficiency power switching applications. It features a maximum drain-source voltage (V_DS) of 25V and a continuous drain current (I_D) rating of 16A, making it suitable for various electronic circuits, including power supplies, motor drivers, and DC-DC converters.
This MOSFET offers low on-resistance (R_DS(on)), ensuring minimal power loss during operation, which enhances overall circuit efficiency. The FQD16N25CTM is also characterized by a fast switching speed, enabling it to handle high-frequency applications effectively.
It comes in a TO-220 package, which facilitates easy heat dissipation and mounting on heatsinks. Additionally, the device is protected against thermal overload, making it reliable in demanding environments. Overall, the FQD16N25CTM is an ideal choice for designers seeking robust performance in power management circuits.

Features

The FQD16N25CTM is an N-channel MOSFET designed for high-efficiency switching applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 25V, making it suitable for low-voltage applications.
2. Current Rating: The device supports continuous drain current (I_D) of 16A, allowing for significant power handling.
3. R_DS(on): It boasts a low on-resistance (R_DS(on)) of approximately 0.025Ω, which helps reduce power losses during operation.
4. Gate Threshold Voltage (V_GS(th)): The gate threshold voltage ranges from 1V to 3V, enabling efficient driving with low gate voltages.
5. Package Type: It comes in a TO-220 package, facilitating effective heat dissipation and easy mounting on PCBs.
6. Fast Switching: Designed for high-speed switching applications, it minimizes transition losses.
7. Applications: Commonly used in DC-DC converters, power supplies, and motor drives.
These features make the FQD16N25CTM ideal for various electronic applications requiring efficient power management.

Package

The FQD16N25CTM is packaged in a TO-220 form factor. This type of package is commonly used for power transistors, providing efficient heat dissipation and ease of mounting on heatsinks.

Pinout

The FQD16N25CTM is an N-channel MOSFET with a pin count of 3. The function of each pin is as follows:
1. Gate (G): This pin is used to control the MOSFET. Applying a voltage to the gate allows current to flow between the drain and source.
2. Drain (D): This pin is connected to the load and receives the current when the MOSFET is turned on.
3. Source (S): This pin is connected to the ground or negative terminal of the power supply. It serves as the reference point for the drain current.
The FQD16N25CTM is commonly used in power management applications due to its low on-resistance and high current handling capabilities.

Manufacturer

The FQD16N25CTM is manufactured by Fairchild Semiconductor, a company that specializes in the design and production of semiconductor solutions. Fairchild Semiconductor, now part of ON Semiconductor following its acquisition in 2016, is known for its focus on power management, analog, and interface products, catering to various industries including automotive, industrial, and consumer electronics. The FQD16N25CTM is a N-channel MOSFET, widely used for its efficiency in switching applications and power management in electronic devices.

Application

The FQD16N25CTM is an N-channel MOSFET commonly used in power applications, including DC-DC converters, motor drives, switch-mode power supplies, and inverters. Its low on-resistance and high-speed switching capabilities make it suitable for applications requiring efficient power management, such as renewable energy systems, electric vehicles, and consumer electronics. Additionally, it can be employed in heating elements and lighting control circuits.

Equivalent

The FQD16N25CTM is a N-channel MOSFET with a 25V rating and a 16A current capacity. Equivalent products include:
1. IRF3205
2. STP16NF06
3. FQP16N25
4. IRF151N
5. BSS138
Always check specific datasheets for exact specifications and suitability for your application.

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UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

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