FQD13N10LTM

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FQD13N10LTM

POWER FIELD-EFFECT TRANSISTOR, 1

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Spécifications

Package Bulk
Series QFET®
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 100 V
Current-ContinuousDrain(Id)@25°C 10A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 5V, 10V
RdsOn(Max)@IdVgs 180mOhm @ 5A, 10V
Vgs(th)(Max)@Id 2V @ 250µA
GateCharge(Qg)(Max)@Vgs 12 nC @ 5 V
Vgs(Max) ±20V
InputCapacitance(Ciss)(Max)@Vds 520 pF @ 25 V
PowerDissipation(Max) 2.5W (Ta), 40W (Tc)
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
SupplierDevicePackage TO-252, (D-Pak)

Vue d'ensemble

Description

The FQD13N10LTM is an N-channel MOSFET designed for various applications, including power management and switching. With a voltage rating of 100V and a continuous drain current capability of 13A, it is suitable for medium to high power applications. Its low on-resistance (RDS(on)) minimizes power loss, enhancing efficiency in circuits. The device typically features a fast switching speed, making it ideal for use in power supplies, DC-DC converters, and motor control systems.
The FQD13N10LTM comes in a TO-220 package, which provides adequate thermal management for heat dissipation. Key parameters to consider include the threshold voltage, gate charge, and maximum junction temperature, which influence its performance in specific circuits. Overall, this MOSFET is known for reliability and efficiency in power electronic designs.

Features

The FQD13N10LTM is an N-channel MOSFET designed for various power applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (Vds) of 100V, making it suitable for high-voltage applications.
2. Continuous Drain Current: Rated for a maximum continuous drain current (Id) of 13A, which allows for significant load handling.
3. RDS(on): Low on-resistance, typically around 0.13 ohms, ensuring efficient power dissipation and minimal heat generation during operation.
4. Gate Threshold Voltage (Vgs(th)): The gate threshold voltage is between 2V to 4V, allowing for easier drive with lower voltage levels.
5. Package Type: Available in a TO-220 package, facilitating better heat dissipation and easier mounting on heatsinks.
6. Fast Switching Speed: It features fast switching capabilities, making it suitable for applications in switching power supplies and motor control.
These characteristics make the FQD13N10LTM ideal for various electronic and power management systems.

Package

The FQD13N10LTM is packaged in a TO-220 format. This package type is commonly used for power MOSFETs, providing effective heat dissipation and ease of mounting on heatsinks.

Pinout

The FQD13N10LTM is an N-channel MOSFET with a pin count of 3. The functions of the pins are as follows:
1. Gate (G): This pin is used to control the MOSFET by applying a voltage. When a sufficient voltage is applied to the gate, it allows current to flow between the drain and source.

2. Drain (D): This is the pin through which the main current flows out of the MOSFET when it is turned on. It connects to the load.
3. Source (S): This pin is where the current enters the MOSFET. It is generally connected to ground in typical applications.
The FQD13N10LTM is primarily used in switching applications, power management, and in circuits requiring high efficiency. It features a maximum drain-source voltage (V_DS) of 100V and a continuous drain current (I_D) of 13A.

Manufacturer

The FQD13N10LTM is manufactured by Fairchild Semiconductor, which is now part of ON Semiconductor. Fairchild Semiconductor is known for its development of semiconductor products, including power MOSFETs, linear regulators, and other components used in various electronic applications. The company focuses on providing solutions for power management, signal processing, and other electronic functions. Fairchild has a strong reputation in the semiconductor industry and serves a wide range of markets, including automotive, industrial, consumer electronics, and communications.

Application

The FQD13N10LTM is a N-channel MOSFET primarily used in power management applications, including DC-DC converters, switching power supplies, and motor control circuits. It is suitable for applications requiring high efficiency and fast switching speeds, such as renewable energy systems, electric vehicles, and consumer electronics. Its low on-resistance and high current capacity make it ideal for high-performance power switching applications.

Equivalent

The FQD13N10LTM is an N-channel MOSFET. Equivalent products include the IRF510, IRF520, and STP13NF10. Always verify specifications such as voltage, current ratings, and on-resistance to ensure compatibility with your application.

Expédition

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DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

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