FQD10N20LTM

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FQD10N20LTM

MOSFET N-CH 200V 7.6A TO252

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Spécifications

Supplier onsemi
Package Tape & Reel (TR),Cut Tape (CT)
Series QFET®
ProductStatus Last Time Buy
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 200 V
Current-ContinuousDrain(Id)@25°C 7.6A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 5V, 10V
RdsOn(Max)@IdVgs 360mOhm @ 3.8A, 10V
Vgs(th)(Max)@Id 2V @ 250µA
GateCharge(Qg)(Max)@Vgs 17 nC @ 5 V
Vgs(Max) ±20V
InputCapacitance(Ciss)(Max)@Vds 830 pF @ 25 V
PowerDissipation(Max) 2.5W (Ta), 51W (Tc)
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
SupplierDevicePackage D-Pak

Vue d'ensemble

Description

The FQD10N20LTM is an N-channel MOSFET (metal-oxide-semiconductor field-effect transistor) designed for power electronics applications. It features a 200V maximum drain-source voltage (VDS) and a continuous drain current (ID) rating of up to 10A, making it suitable for high-voltage and medium-current applications.
This MOSFET is known for its low on-resistance (RDS(on)), typically around 0.1 ohms, facilitating efficient power conversion with minimal heat generation. Its fast switching capabilities make it ideal for applications such as switching power supplies, motor drivers, and DC-DC converters.
The FQD10N20LTM is packaged in a TO-220 format, allowing for effective heat dissipation. Given its performance characteristics, it is widely used in automotive, industrial, and consumer electronics. When selecting this component, it's crucial to consider gate threshold voltage (VGS(th)) and thermal management to ensure optimal operation within specified limits.

Features

The FQD10N20LTM is an N-channel MOSFET designed for high-performance applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 200V, making it suitable for high-voltage applications.
2. Current Rating: It can handle a continuous drain current (I_D) of up to 10A at a suitable temperature.
3. On-Resistance (R_DS(on)): It exhibits a low on-resistance of approximately 0.1 ohms, which helps minimize power loss during operation.
4. Gate Threshold Voltage (V_GS(th)): The threshold voltage is typically between 2V and 4V, enabling efficient switching.
5. Package: Usually available in a TO-220 package, ensuring good thermal performance.
6. Fast Switching Speed: Suitable for applications requiring high-speed operation, such as switching power supplies and motor drivers.
Overall, the FQD10N20LTM is ideal for various applications requiring robust performance, low power losses, and efficient thermal management.

Package

The FQD10N20LTM is typically available in a TO-220 package type. This package allows for effective heat dissipation and is commonly used in power applications.

Pinout

The FQD10N20LTM is an N-channel MOSFET with a total of 5 pins. The pin functions are as follows:
1. Gate (G): This pin is used to control the MOSFET by applying a voltage to turn it on or off.
2. Drain (D): The current flows out of this terminal when the MOSFET is in the 'on' state.
3. Source (S): This is the terminal through which the current enters the MOSFET when activated.
4. Gate-Source (G-S): Internal connections for gate and source functionality.
5. Drain-Source (D-S): Internal connections for drain and source functionality.
This device is typically used in various switching applications due to its high efficiency and fast switching capabilities. It features a maximum drain-source voltage (V_DS) of 200V and a continuous drain current (I_D) of up to 10A.

Manufacturer

The FQD10N20LTM is manufactured by Fairchild Semiconductor, which is a company known for producing a wide range of semiconductor products, including power transistors, integrated circuits, and other electronic components. Fairchild Semiconductor specializes in providing solutions for various applications in the automotive, industrial, and consumer electronics sectors. The company focuses on innovation and efficiency in its product offerings, making it a significant player in the semiconductor industry. In 2016, Fairchild Semiconductor was acquired by ON Semiconductor, which has further expanded its portfolio and capabilities in the semiconductor market.

Application

The FQD10N20LTM is a N-channel MOSFET primarily used in applications such as power supplies, DC-DC converters, motor control, and switching regulators. Its features enable efficient switching and high current handling, making it suitable for high-performance consumer electronics, automotive systems, and industrial automation. Additionally, it is utilized in LED drivers and other power management solutions where compact size and thermal efficiency are essential.

Equivalent

The FQD10N20LTM is an N-channel MOSFET. Equivalent products include the IRF740, STP10NM20, and BSS123. Always verify specifications such as voltage, current ratings, and package type to ensure compatibility with your application.

Expédition

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Référence des frais d'expédition (DHL/FedEx):

DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

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